Researcher profile

Rafael González-Hernández

Rafael González-Hernández contributes to research discovery and scholarly infrastructure.

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Published work

2 published item(s)

preprint2021arXiv

Topological electronic structure and Weyl points in nonsymmorphic hexagonal materials

Using topological band theory analysis we show that the nonsymmorphic symmetry operations in hexagonal lattices enforce Weyl points at the screw-invariant high-symmetry lines of the band structure. The corepresentation theory and connectivity group theory show that Weyl points are generated by band crossings in accordion-like and hourglass-like dispersion relations. These Weyl points are stable against weak perturbations and are protected by the screw rotation symmetry. Based on first-principles calculations we found a complete agreement between the topological predicted energy dispersion relations and real hexagonal materials. Topological charge (chirality) and Berry curvature calculations show the simultaneous formation of Weyl points and nodal-lines in 4d transition-metal trifluorides such as AgF3 and AuF3. Furthermore, a large intrinsic spin-Hall conductivity was found due to the combined strong spin-orbit coupling and multiple Weyl-point crossings in the electronic structure. These materials could be used to the spin/charge conversion in more energy-efficient spintronic devices.

preprint2018arXiv

Electrical switching of perpendicular magnetization in L10 FePt single layer

Electrical manipulation of magnetization is essential for integration of magnetic functionalities such as magnetic memories and magnetic logic devices into electronic circuits. The current induced spin-orbit torque (SOT) in heavy metal/ferromagnet (HM/FM) bilayers via the spin Hall effect in the HM and/or the Rashba effect at the interfaces provides an efficient way to switch the magnetization. In the meantime, current induced SOT has also been used to switch the in-plane magnetization in single layers such as ferromagnetic semiconductor (Ga,Mn)As and antiferromagnetic metal CuMnAs with globally or locally broken inversion symmetry. Here we demonstrate the current induced perpendicular magnetization switching in L10 FePt single layer. The current induced spin-orbit effective fields in L10 FePt increase with the chemical ordering parameter (S). In 20 nm FePt films with high S, we observe a large charge-to-spin conversion efficiency and a switching current density as low as 7.0E6 A/cm2. We anticipate our findings may stimulate the exploration of the spin-orbit torques in bulk perpendicular magnetic anisotropic materials and the application of high-efficient perpendicular magnetization switching in single FM layer.