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R. Yoshimi

R. Yoshimi appears in the imported research catalog. Authorship, coauthor and topic links are available while profile ownership is still unclaimed.

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cond-mat.mtrl-scicond-mat.mes-hallcond-mat.str-el

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Published work

9 published item(s)

preprint2022arXiv

Terahertz lattice and charge dynamics in ferroelectric semiconductor Sn$_x$Pb$_{1-x}$Te

The symmetry breaking induced by the ferroelectric transition often triggers the emergence of topological electronic states such as Weyl fermions in ferroelectric-like metals/semimetals. Such strong coupling between the lattice deformation and electronic states is therefore essentially important for the control of novel topological phases. Here, we study the terahertz lattice and charge dynamics in ferroelectric semiconductor SnxPb1-xTe thin films hosting versatile topological phases by means of the terahertz time-domain spectroscopy. With lowering the temperature, the resonant frequency of transverse optical phonon shows the significant softening and upturn. This temperature anomaly of lattice dynamics directly indicates the displacive-type ferroelectric transition. The resulting phase diagram suggests the enhancement of ferroelectricity in the films due to compressive strain compared with the bulk crystals. The soft phonon induces the large DC and terahertz dielectric constant even in metallic state. Furthermore, we find that the Born effective charge of soft phonon mode is enhanced at around the compositions showing the band gap closing associated with the topological transition.

0 citations0 reviewsNo code linkedOpen access
preprint2021arXiv

Experimental signature of parity anomaly in semi-magnetic topological insulator

A three-dimensional topological insulator features a two-dimensional surface state consisting of a single linearly-dispersive Dirac cone. Under broken time-reversal symmetry, the single Dirac cone is predicted to cause half-integer quantization of Hall conductance, which is a manifestation of the parity anomaly in quantum field theory. However, despite various observations of quantization phenomena, the half-integer quantization has been elusive because a pair of equivalent Dirac cones on two opposing surfaces are simultaneously measured in ordinary experiments. Here we demonstrate the half-integer quantization of Hall conductance in a synthetic heterostructure termed a 'semi-magnetic' topological insulator, where only one surface state is gapped by magnetic doping and the opposite one is non-magnetic and gapless. We observe half quantized Faraday/Kerr rotations with terahertz magneto-optical spectroscopy and half quantized Hall conductance in transport at zero magnetic field. Our results suggest a condensed-matter realization of the parity anomaly and open a way for studying unconventional physics enabled by a single Dirac fermion.

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preprint2016arXiv

Enhanced photogalvanic current in topological insulators via Fermi energy tuning

We achieve the enhancement of circular photogalvanic effect arising from the photo-injection of spins in topological insulator thin films by tuning the Fermi level ($E_{\rm F}$). A series of (Bi$_{1-x}$Sb$_x$)$_2$Te$_3$ thin films were tailored so that the Fermi energy ranges above 0.34 eV to below 0.29 eV of the Dirac point, i.e., from the bulk conduction band bottom to the valence band top through the bulk in-gap surface-Dirac cone. The circular photogalvanic current, indicating a flow of spin-polarized surface-Dirac electrons, shows a pronounced peak when the $E_{\rm F}$ is set near the Dirac point and is also correlated with the carrier mobility. Our observation reveals that there are substantial scatterings between the surface-Dirac and bulkstate electrons in the generation process of spin-polarized photocurrent, which can be avoided by designing the electronic structure in topological insulators.

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preprint2016arXiv

Large Unidirectional Magnetoresistance in a Magnetic Topological Insulator

We report current-direction dependent or unidirectional magnetoresistance (UMR) in magnetic/nonmagnetic topological insulator (TI) heterostructures, Cr$_x$(Bi$_{1-y}$Sb$_y$)$_{2-x}$Te$_3$/(Bi$_{1-y}$Sb$_y$)$_2$Te$_3$, that is several orders of magnitude larger than in other reported systems. From the magnetic field and temperature dependence, the UMR is identified to originate from the asymmetric scattering of electrons by magnons. In particular, the large magnitude of UMR is an outcome of spin-momentum locking and a small Fermi wavenumber at the surface of TI. In fact, the UMR is maximized around the Dirac point with the minimal Fermi wavenumber.

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preprint2016arXiv

Observation of topological Faraday and Kerr rotations in quantum anomalous Hall state by terahertz magneto-optics

Electrodynamic responses from three-dimensional (3D) topological insulators (TIs) are characterized by the universal magnetoelectric $E\cdot B$ term constituent of the Lagrangian formalism. The quantized magnetoelectric coupling, which is generally referred to as topological magnetoelectric (TME) effect, has been predicted to induce exotic phenomena including the universal low-energy magneto-optical effects. Here we report the experimental demonstration of the long-sought TME effect, which is exemplified by magneto-optical Faraday and Kerr rotations in the quantum anomalous Hall (QAH) states of magnetic TI surfaces by terahertz magneto-optics. The universal relation composed of the observed Faraday and Kerr rotation angles but not of any material parameters (e.g. dielectric constant and magnetic susceptibility) well exhibits the trajectory toward the fine structure constant $α$ $(= 2πe^2/hc \sim 1/137)$ in the quantized limit. Our result will pave a way for versatile TME effects with emergent topological functions.

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preprint2015arXiv

Fermi level dependent charge-to-spin current conversion by Dirac surface state of topological insulators

The spin-momentum locking at the Dirac surface state of a topological insulator (TI) offers a distinct possibility of a highly efficient charge-to-spin current (C-S) conversion compared with spin Hall effects in conventional paramagnetic metals. For the development of TI-based spin current devices, it is essential to evaluate its conversion efficiency quantitatively as a function of the Fermi level EF position. Here we exemplify a coefficient of qICS to characterize the interface C-S conversion effect by using spin torque ferromagnetic resonance (ST-FMR) for (Bi1-xSbx)2Te3 thin films whose EF is tuned across the band gap. In bulk insulating conditions, interface C-S conversion effect via Dirac surface state is evaluated as nearly constant large values of qICS, reflecting that the qICS is inversely proportional to the Fermi velocity vF that is almost constant. However, when EF traverses through the Dirac point, the qICS is remarkably suppressed possibly due to the degeneracy of surface spins or instability of helical spin structure. These results demonstrate that the fine tuning of the EF in TI based heterostructures is critical to maximizing the efficiency using the spin-momentum locking mechanism.

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preprint2015arXiv

Magnetic modulation doping in topological insulators toward higher-temperature quantum anomalous Hall effect

Quantum anomalous Hall effect (QAHE), which generates dissipation-less edge current without external magnetic field, is observed in magnetic-ion doped topological insulators (TIs), such as Cr- and V-doped (Bi,Sb)2Te3. The QAHE emerges when the Fermi level is inside the magnetically induced gap around the original Dirac point of the TI surface state. Although the size of gap is reported to be about 50 meV, the observable temperature of QAHE has been limited below 300 mK. We attempt magnetic-Cr modulation doping into topological insulator (Bi,Sb)2Te3 films to increase the observable temperature of QAHE. By introducing the rich-Cr-doped thin (1 nm) layers at the vicinity of the both surfaces based on non-Cr-doped (Bi,Sb)2Te3 films, we have succeeded in observing the QAHE up to 2 K. The improvement in the observable temperature achieved by this modulation-doping appears to be originating from the suppression of the disorder in the surface state interacting with the rich magnetic moments. Such a superlattice designing of the stabilized QAHE may pave a way to dissipation-less electronics based on the highertemperature and zero magnetic-field quantum conduction.

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preprint2014arXiv

Quantum Hall Effect on Top and Bottom Surface States of Topological Insulator (Bi1-xSbx)2Te3 Films

The three-dimensional (3D) topological insulator (TI) is a novel state of matter as characterized by two-dimensional (2D) metallic Dirac states on its surface. Bi-based chalcogenides such as Bi2Se3, Bi2Te3, Sb2Te3 and their combined/mixed compounds like Bi2Se2Te and (Bi1-xSbx)2Te3 are typical members of 3D-TIs which have been intensively studied in forms of bulk single crystals and thin films to verify the topological nature of the surface states. Here, we report the realization of the Quantum Hall effect (QHE) on the surface Dirac states in (Bi1-xSbx)2Te3 films (x = 0.84 and 0.88). With electrostatic gate-tuning of the Fermi level in the bulk band gap under magnetic fields, the quantum Hall states with filling factor ν= \pm 1 are resolved with quantized Hall resistance of Ryx = h/e2 and zero longitudinal resistance, owing to chiral edge modes at top/bottom surface Dirac states. Furthermore, the appearance of a ν= 0 state (σxy = 0) reflects a pseudo-spin Hall insulator state when the Fermi level is tuned in between the energy levels of the non-degenerate top and bottom surface Dirac points. The observation of the QHE in 3D TI films may pave a way toward TI-based electronics.

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preprint2014arXiv

Trajectory of Anomalous Hall Effect toward the Quantized State in a Ferromagnetic Topological Insulator

Topological insulators are bulk electronic insulators which possess symmetry protected gapless modes on their surfaces. Breaking the symmetries that underlie the gapless nature of the surface modes is predicted to give rise to exotic new states of matter. In particular, it has recently been predicted and shown that breaking of time reversal symmetry in the form of ferromagnetism can give rise to a gapped state characterized by a zero magnetic field quantized Hall response and dissipationless longitudinal transport known as the Quantum Anomalous Hall (QAH) state. A key question that has thus far remained experimentally unexplored is the relationship of this new type of quantum Hall state with the previously known orbitally driven quantum Hall states. Here, we show experimentally that a ferromagnetic topological insulator exhibiting the QAH state is well described by the global phase diagram of the quantum Hall effect. By mapping the behavior of the conductivity tensor in the parameter space of temperature, magnetic field, and chemical potential in the vicinity of the QAH phase, we find evidence for quantum criticality and delocalization behavior that can quantitatively be described by the renormalization group properties of the quantum Hall ground state. This result demonstrates that the QAH state observed in ferromagnetic topological insulators can be understood within the context of the law of corresponding states which governs the quantum Hall state. This suggests a roadmap for studying the QAH effect including transitions to possible adjacent topologically non-trivial states and a possible universality class for the QAH transition.

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