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R. Y. Chen

R. Y. Chen contributes to research discovery and scholarly infrastructure.

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Published work

2 published item(s)

preprint2024arXiv

Optical probe on doping modulation of magnetic Weyl semimetal Co$_3$Sn$_2$S$_2$

The magnetic Weyl semimetal Co$_3$Sn$_2$S$_2$ is extensively investigated due to its giant anomalous Hall effect (AHE).Recent studies demonstrate that the AHE can be effectively tuned by multi-electron Ni doping.To reveal the underlying mechanism of this significant manipulation,it is crucial to explore the band structure modification caused by Ni doping. Here,we study the electrodynamics of both pristine and Ni-doped Co$_{3-x}$Ni$_x$Sn$_2$S$_2$ with $x=$0, 0.11 and 0.17 by infrared spectroscopy. We find that the inverted energy gap around the Fermi level($E_{F}$) gets smaller at $x=$0.11,which is supposed to enhance the Berry curvature and therefore increase the AHE.Then $E_{F}$ moves out of this gap at $x=$0.17. Additionally,the low temperature carrier density is demonstrated to increase monotonically upon doping,which is different from previous Hall measurement results. We also observe the evidences of band broadening and exotic changes of high-energy interband transitions caused by doping.Our results provide detailed information about the band structure of Co$_{3-x}$Ni$_x$Sn$_2$S$_2$ at different doping levels,which will help to guide further studies on the chemical tuning of AHE.

preprint2020arXiv

Current-induced magnetization switching in CoTb amorphous single layer

We demonstrate spin-orbit torque (SOT) switching of amorphous CoTb single layer films with perpendicular magnetic anisotropy (PMA). The switching sustains even the film thickness is above 10 nm, where the critical switching current density keeps almost constant. Without the need of overcoming the strong interfacial Dzyaloshinskii-Moriya interaction caused by the heavy metal, a quite low assistant field of ~20 Oe is sufficient to realize the fully switching. The SOT effective field decreases and undergoes a sign change with the decrease of the Tb-concentration, implying that a combination of the spin Hall effect from both Co and Tb as well as an asymmetric spin current absorption accounts for the SOT switching mechanism. Our findings would advance the use of magnetic materials with bulk PMA for energy-efficient and thermal-stable non-volatile memories, and add a different dimension for understanding the ordering and asymmetry in amorphous thin films.