Researcher profile

R. Wallny

R. Wallny contributes to research discovery and scholarly infrastructure.

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Published work

2 published item(s)

preprint2019arXiv

Charting the European Course to the High-Energy Frontier

We review the capabilities of two projects that have been proposed as the next major European facility, for consideration in the upcoming update of the European Strategy for Particle Physics: CLIC and FCC. We focus on their physics potentials and emphasise the key differences between the linear or circular approaches. We stress the uniqueness of the FCC-ee programme for precision electroweak physics at the $Z$ peak and the $WW$ threshold, as well as its unequalled statistics for Higgs physics and high accuracy for observing possible new phenomena in Higgs and $Z$ decays, whereas CLIC and FCC-ee offer similar capabilities near the $t \overline t$ threshold. Whilst CLIC offers the possibility of energy upgrades to 1500 and 3000 GeV, FCC-ee paves the way for FCC-hh. The latter offers unique capabilities for making direct or indirect discoveries in a new energy range, and has the highest sensitivity to the self-couplings of the Higgs boson and any anomalous couplings. We consider the FCC programme to be the best option to maintain Europe's place at the high-energy frontier during the coming decades.

preprint2019arXiv

Three-dimensional charge transport mapping by two-photon absorption edge transient-current technique in synthetic single-crystalline diamond

We demonstrate the application of two-photon absorption transient current technique to wide bandgap semiconductors. We utilize it to probe charge transport properties of single-crystal Chemical Vapor Deposition (scCVD) diamond. The charge carriers, inside the scCVD diamond sample, are excited by a femtosecond laser through simultaneous absorption of two photons. Due to the nature of two-photon absorption, the generation of charge carriers is confined in space (3-D) around the focal point of the laser. Such localized charge injection allows to probe the charge transport properties of the semiconductor bulk with a fine-grained 3-D resolution. Exploiting spatial confinement of the generated charge, the electrical field of the diamond bulk was mapped at different depths and compared to an X-ray diffraction topograph of the sample. Measurements utilizing this method provide a unique way of exploring spatial variations of charge transport properties in transparent wide-bandgap semiconductors.