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Researcher profile

R. T. Holm

R. T. Holm contributes to research discovery and scholarly infrastructure.

ResearcherAffiliation not importedOpen to collaborate
physics.app-ph

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Published work

3 published item(s)

preprint2020arXiv

High-reflectance III-nitride distributed Bragg reflectors grown on Si substrates

Distributed Bragg reflectors (DBRs) composed of an AlN/AlGaN superlattice were grown of Si (111) substrates. The first high-reflectance III-nitride DBR on Si was achieved by growing the DBR directly on the Si substrate to enhance the overall reflectance due to the high index of refraction contrast at the Si/AlN interface. For a 9x DBR, the measured peak reflectance of 96.8% actually exceeded the theoretical value of 96.1%. The AlN/AlGaN superlattice served the added purpose of compensating the large tensile strain developed during the growth of a crack-free 500 nm GaN / 7x DBR / Si structure. This achievement opens the possibility to manufacture high-quality III-nitride optoelectronic devices without optical absorption in the opaque Si substrate.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Metalorganic chemical-vapor deposition of high-reflectance III-nitride distributed Bragg reflectors on Si substrates

High-reflectance group III-nitride distributed Bragg reflectors (DBRs) were deposited by MOCVD on Si (111) substrates. A reflectance greater than 96% was demonstrated for the first time for an AlN/GaN DBR with a stop-band centered in the blue-green range of the visible spectrum. Crack-free GaN cap layers were grown on the DBR structures to demonstrate the opportunity to build III-nitride optoelectronic devices in this material. The DBR structure was under significant strain due to growth on a mismatched substrate although the GaN cap layer was shown to be strain free.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Wurtzite III-nitride distributed Bragg reflectors on Si (100) substrates

Distributed Bragg reflectors (DBRs) composed of an AlN/GaN superlattice were demonstrated for the first time on Si (100) substrates. Single-crystal wurtzite superlattice structures were achieved on this cubic substrate by employing offcut Si (100) wafers with the surface normal pointing 4° towards the [110] direction. This misorientation introduced an additional epitaxial constraint that prevented the growth of a two-domain GaN surface as well as cubic GaN inclusions. A crack-free 600 nm GaN cap / 5x AlN / GaN DBR structure on Si (100) was demonstrated. This accomplishment of a wurtzite III-nitride DBRs on Si (100) opens the possibility to integrate novel optical and optoelectronic devices with established Si microelectronics technology.

0 citations0 reviewsNo code linkedOpen access