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M. A. Mastro

M. A. Mastro appears in the imported research catalog. Authorship, coauthor and topic links are available while profile ownership is still unclaimed.

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physics.app-ph

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Published work

4 published item(s)

preprint2020arXiv

High-reflectance III-nitride distributed Bragg reflectors grown on Si substrates

Distributed Bragg reflectors (DBRs) composed of an AlN/AlGaN superlattice were grown of Si (111) substrates. The first high-reflectance III-nitride DBR on Si was achieved by growing the DBR directly on the Si substrate to enhance the overall reflectance due to the high index of refraction contrast at the Si/AlN interface. For a 9x DBR, the measured peak reflectance of 96.8% actually exceeded the theoretical value of 96.1%. The AlN/AlGaN superlattice served the added purpose of compensating the large tensile strain developed during the growth of a crack-free 500 nm GaN / 7x DBR / Si structure. This achievement opens the possibility to manufacture high-quality III-nitride optoelectronic devices without optical absorption in the opaque Si substrate.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Metalorganic chemical-vapor deposition of high-reflectance III-nitride distributed Bragg reflectors on Si substrates

High-reflectance group III-nitride distributed Bragg reflectors (DBRs) were deposited by MOCVD on Si (111) substrates. A reflectance greater than 96% was demonstrated for the first time for an AlN/GaN DBR with a stop-band centered in the blue-green range of the visible spectrum. Crack-free GaN cap layers were grown on the DBR structures to demonstrate the opportunity to build III-nitride optoelectronic devices in this material. The DBR structure was under significant strain due to growth on a mismatched substrate although the GaN cap layer was shown to be strain free.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Opportunities and Challenges in MOCVD of β-Ga2O3 for Power Electronic Devices

Recent breakthroughs in bulk crystal growth of beta-Ga2O3 by the edge-defined film-fed technique has led to the commercialization of large-area beta-Ga2O3 substrates. Standard epitaxy approaches are being utilized to develop various thin-film beta-Ga2O3 based devices including lateral transistors. This article will discuss the challenges for metal organic chemical vapor deposition (MOCVD) of beta-Ga2O3 and the design criteria for use of this material system in power electronic device structures.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Wurtzite III-nitride distributed Bragg reflectors on Si (100) substrates

Distributed Bragg reflectors (DBRs) composed of an AlN/GaN superlattice were demonstrated for the first time on Si (100) substrates. Single-crystal wurtzite superlattice structures were achieved on this cubic substrate by employing offcut Si (100) wafers with the surface normal pointing 4° towards the [110] direction. This misorientation introduced an additional epitaxial constraint that prevented the growth of a two-domain GaN surface as well as cubic GaN inclusions. A crack-free 600 nm GaN cap / 5x AlN / GaN DBR structure on Si (100) was demonstrated. This accomplishment of a wurtzite III-nitride DBRs on Si (100) opens the possibility to integrate novel optical and optoelectronic devices with established Si microelectronics technology.

0 citations0 reviewsNo code linkedOpen access