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R. Songmuang

R. Songmuang contributes to research discovery and scholarly infrastructure.

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cond-mat.mtrl-sci cond-mat.mes-hall quant-ph

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preprint2016arXiv

Nanometre scale monitoring of the quantum confined stark effect and emission efficiency droop in multiple GaN/AlN quantum disks in nanowires

We report on a detailed study of the intensity dependent optical properties of individual GaN/AlN Quantum Disks (QDisks) embedded into GaN nanowires (NW). The structural and optical properties of the QDisks were probed by high spatial resolution cathodoluminescence (CL) in a scanning transmission electron microscope (STEM). By exciting the QDisks with a nanometric electron beam at currents spanning over 3 orders of magnitude, strong non-linearities (energy shifts) in the light emission are observed. In particular, we find that the amount of energy shift depends on the emission rate and on the QDisk morphology (size, position along the NW and shell thickness). For thick QDisks (>4nm), the QDisk emission energy is observed to blue-shift with the increase of the emission intensity. This is interpreted as a consequence of the increase of carriers density excited by the incident electron beam inside the QDisks, which screens the internal electric field and thus reduces the quantum confined Stark effect (QCSE) present in these QDisks. For thinner QDisks (<3 nm), the blue-shift is almost absent in agreement with the negligible QCSE at such sizes. For QDisks of intermediate sizes there exists a current threshold above which the energy shifts, marking the transition from unscreened to partially screened QCSE. From the threshold value we estimate the lifetime in the unscreened regime. These observations suggest that, counterintuitively, electrons of high energy can behave ultimately as single electron-hole pair generators. In addition, when we increase the current from 1 pA to 10 pA the light emission efficiency drops by more than one order of magnitude. This reduction of the emission efficiency is a manifestation of the efficiency droop as observed in nitride-based 2D light emitting diodes, a phenomenon tentatively attributed to the Auger effect.

preprint2015arXiv

Determination of the optimal shell thickness for self-catalysed GaAs/AlGaAs core-shell nanowires

We present a set of experimental results identifying various effects that govern the carrier dynamics of self-catalyzed GaAs/AlGaAs core-shell nanowires (NWs) grown by molecular beam epitaxy i.e. surface recombination velocity, surface charge traps, and structural defects. Time-resolved photoluminescence of NW ensemble and spatially-resolved cathodoluminescence of single NWs reveal that emission intensity, decay time and carrier diffusion length of the GaAs NW cores strongly depend on AlGaAs shell thickness but in a non-monotonic fashion. Although 7 nm-AlGaAs shell can efficiently suppress the surface recombination velocity of the GaAs NW cores, the effect of the band bending caused by the surface charges remains dominant if the shell thickness is less than 50 nm; that is, the carrier diffusion length is smaller in the NWs with a thinner shell caused by a stronger carrier scattering at the core/shell interface. If the AlGaAs shell thickness is larger than 50 nm, the luminescence efficiency of the GaAs NW cores starts to be deteriorated, ascribed to the defect formation inside the AlGaAs shell evidenced by transmission electron microscopy.

preprint2015arXiv

Visualising highly localised luminescence in GaN/AlN heterostructures in nanowires

The optical properties of a stack of GaN/AlN quantum discs (QDiscs) in a GaN nanowire have been studied by spatially resolved cathodoluminescence (CL) at the nanoscale (nanoCL) using a Scanning Transmission Electron Microscope (STEM) operating in spectrum imaging mode. For the electron beam excitation in the QDisc region, the luminescence signal is highly localized with spatial extension as low as 5 nm due to the high band gap difference between GaN and AlN. This allows for the discrimination between the emission of neighbouring QDiscs and for evidencing the presence of lateral inclusions, about 3 nm thick and 20 nm long rods (quantum rods, QRods), grown unintentionally on the nanowire sidewalls. These structures, also observed by STEM dark-field imaging, are proven to be optically active in nanoCL, emitting at similar, but usually shorter, wavelengths with respect to most QDiscs.

preprint2014arXiv

Alloy inhomogeneity and carrier localization in AlGaN sections and AlGaN/AlN nanodisks in nanowires with 240-350 nm emission

The Al-Ga intermixing at Al(Ga)N/GaN interfaces in nanowires and the chemical inhomogeneity in AlxGa1-xN/AlN nanodisks (NDs) are attributed to the strain relaxation process. This interpretation is supported by the three-dimensional strain distribution calculated by minimizing the elastic energy in the structure. The alloy inhomogeneity increases with Al content, leading to enhanced carrier localization signatures in their optical characteristics i.e. red shift of the emission, s-shaped temperature dependence and linewidth broadening. Despite these alloy fluctuations, the emission energy of AlGaN/AlN NDs can be tuned in the 240-350 nm range with internal quantum efficiencies around 30%.

preprint2012arXiv

Intrinsic limits governing MBE growth of Ga-assisted GaAs nanowires on Si(111)

Diffusion-enhanced and desorption-limited growth regimes of Ga-assisted GaAs nanowires were identified. In the latter regime, the number of vertical NWs with a narrow length distribution was increased by raising the growth temperature. The maximum axial growth rate; which can be quantified by the supplied rate of As atoms, is achieved when a dynamical equilibrium state is maintained in Ga droplets i.e. the number of impinging As atoms on the droplet surface is equivalent to that of direct deposited Ga atoms combining with the diffusing ones. The contribution of Ga diffusion to the wire growth was evidenced by the diameter-dependent NW axial growth rate.

preprint2011arXiv

Spontaneous formation of well-defined Al rich shell structures in AlxGa1-xN/GaN nanowires

Growth of catalyst-free AlxGa1-xN (0.15<x<0.50)/GaN nanowires by plasma assisted molecular beam epitaxy is thoroughly structural and chemical analyzed by using transmission electron microscopy related techniques. We found that well-defined and defect-free core-shell structures are spontaneously formed during the wire growth. An Al-rich shell with significantly higher Al composition pseudomorphically encapsulates a Ga-rich AlxGa1-xN core with an atomically-abrupt hetero-interface. Nevertheless, the energy dispersive X-Ray spectroscopy reveals a complex chemical composition gradient along the wire axis for both core and shell blocks which is ascribed to the adatom surface kinetic differences and the shadow effect during the growth.

preprint2010arXiv

Quantum transport in GaN/AlN double-barrier heterostructure nanowires

We investigate electronic transport in n-i-n GaN nanowires with and without AlN double barriers. The nanowires are grown by catalyst-free, plasma-assisted molecular beam epitaxy enabling abrupt GaN/AlN interfaces as well as longitudinal n-type doping modulation. At low temperature, transport in n-i-n GaN nanowires is dominated by the Coulomb blockade effect. Carriers are confined in the undoped middle region, forming single or multiple islands with a characteristic length of ~100 nm. The incorporation of two AlN tunnel barriers causes confinement to occur within the GaN well in between. In the case of 6-nm-thick wells and 2-nm-thick barriers, we observe characteristic signatures of Coulomb-blockaded transport in single quantum dots with discrete energy states. For narrower wells and barriers, Coulomb-blockade effects do not play a significant role while the onset of resonant tunneling via the confined quantum levels is accompanied by a negative differential resistance surviving up to ~150 K.

preprint2006arXiv

SiOx/Si radial superlattices and microtube optical ring resonators

Scanning and transmission electron microscopy reveal that SiOx/Si layers can roll-up into microtubes and radial superlattices on a Si substrate. These hybrid objects are thermally stable up to 850 C and emit light in the visible spectral range at room temperature. For tubes disengaged from the substrate surface, optically resonant emission with mode spacings inversely proportional to the tube diameter are observed and agree excellently with those obtained from Finite-Different-Time-Domain simulations. The resonant modes we record are strictly polarized along the tube axis.