Researcher profile

R Rawat

R Rawat contributes to research discovery and scholarly infrastructure.

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Published work

2 published item(s)

preprint2016arXiv

Path dependent resistivity study across field induced paramagnetic to ferromagnetic transition in Se doped CoS$_2$

A systematic study of thermomagnetic irreversibility CoS$_{1.76}$Se$_{0.24}$ has been carried out. Our study shows that the resistivity at low temperature can be tuned by cooling in different magnetic fields and the critical field required for paramagnetic (PM) to ferromagnetic (FM) transition varies non-monotonically with temperature. The field induced PM to FM transition results in giant positive magnetoresistance (MR) of about 160\% at 5 K. Measurements under CHUF (cooling and heating in unequal magnetic field) protocol show reentrant transition on warming under higher magnetic field (than that applied during cooling). It indicates that the glass like behaviour in this system can be explained in the framework of the kinetic arrest of first order transition. Among the growing list of diverse system showing glass like arrested magnetic states, the present system is the first example where, kinetic arrest is observed for a disordered (here PM) to ordered (here FM) first order transition.

preprint2011arXiv

First order antiferro-ferromagnetic transition in Fe49(Rh0.93Pd0.07)51 under simultaneous application of magnetic field and external pressure

The magnetic field-pressure-temperature (H-P-T) phase diagram for first order antiferromagnetic (AFM) to ferromagnetic (FM) transition in Fe49(Rh0.93Pd0.07)51 has been constructed using resistivity measurements under simultaneous application of magnetic field (up to 8 Tesla) and pressure (up to 20 kbar). Temperature dependence of resistivity (ρ-T) shows that with increasing pressure, the width of the transition and the extent of hysteresis decreases whereas with the application of magnetic field it increases. Consistent with existing literature the first order transition temperature (TN) increases with the application of external pressure (~ 7.3 K/ kbar) and decreases with magnetic field (~ - 12.8 K/Tesla). Exploiting these opposing trends, resistivity under simultaneous application of magnetic field and pressure is used to distinguish the relative effect of temperature, magnetic field and pressure on disorder broadened first order transition. For this a set of H and P values are chosen for which TN (H1, P1) = TN (H2, P2). Measurements for such combinations of H and P show that the temperature dependence of resistivity is similar i.e. the broadening (in temperature) of transition as well as extent of hysteresis remains independent of H and P. The transition width decreases exponentially with increasing temperature. Isothermal magnetoresistance measurement under various constant pressure show that even though the critical field required for AFM-FM transition depends on applied pressure, the hysteresis as well as transition width (in magnetic field) both remains independent of pressure, consistent with our conclusions drawn from ρ-T measurements.