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R. Paniago

R. Paniago contributes to research discovery and scholarly infrastructure.

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Published work

2 published item(s)

preprint2022arXiv

Short-range antiferromagnetic interaction and spin-phonon coupling in La2CoMnO6 double perovskite

Weak antiferromagnetic (AF) interaction in the ferromagnetic (FM) partially ordered La2CoMnO6 (LCMO) was detected by Raman spectroscopy by monitoring spin-phonon coupling. Because of the sensibility to probe short-range disorder and lattice modifications, the Raman spectroscopy showed to be an useful tool to indicate less remarkable magnetic transitions in LCMO compound. Apart from the expected spin-phonon coupling due to the long-range FM superexchange (Tc~230 K), phonons parameters pointed out an additional spin-phonon coupling related to the short-range AF interaction at Tc~135 K, which was not detected from the magnetic bulk response. These results reinforce the Raman spectroscopy as a powerful technique to detect antisite disorder into A2B'B"O6 magnetic double perovskites, whose magnetic properties are driven by superexchange interactions.

preprint2014arXiv

Intrinsic dielectric properties of magnetodielectric La$_2$CoMnO$_6$

Manganites with double perovskite structure are being attractive because of their interesting magnetoelectric and dielectric responses. Particularly, colossal dielectric constant (CDC) behavior has been observed in La$_2$CoMnO$_6$ (LCMO), at radio frequencies and room temperature. In this paper, we employed infrared-reflectivity spectroscopy onto a LCMO ceramic obtained through a modified Pechini's method to determine the phonon contribution to the intrinsic dielectric response of the system and to investigate the CDC origin. The analysis of the main polar modes and of the obtained phonon parameters show that CDC effect of LCMO is of pure extrinsic origin. In addition, we have estimated the dielectric constant and quality factor of the material in microwave region, $e'_s \sim 16$ and $Q_u \times f \sim 124$ THz, which shows that LCMO is appropriate for applications into microwave devices and circuitry.