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Researcher profile

H. Reichlova

H. Reichlova contributes to research discovery and scholarly infrastructure.

ResearcherAffiliation not importedOpen to collaborate
cond-mat.mtrl-sci

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Published work

5 published item(s)

preprint2022arXiv

Short-range antiferromagnetic interaction and spin-phonon coupling in La2CoMnO6 double perovskite

Weak antiferromagnetic (AF) interaction in the ferromagnetic (FM) partially ordered La2CoMnO6 (LCMO) was detected by Raman spectroscopy by monitoring spin-phonon coupling. Because of the sensibility to probe short-range disorder and lattice modifications, the Raman spectroscopy showed to be an useful tool to indicate less remarkable magnetic transitions in LCMO compound. Apart from the expected spin-phonon coupling due to the long-range FM superexchange (Tc~230 K), phonons parameters pointed out an additional spin-phonon coupling related to the short-range AF interaction at Tc~135 K, which was not detected from the magnetic bulk response. These results reinforce the Raman spectroscopy as a powerful technique to detect antisite disorder into A2B'B"O6 magnetic double perovskites, whose magnetic properties are driven by superexchange interactions.

0 citations0 reviewsNo code linkedOpen access
preprint2014arXiv

Role of rare-earth ionic radii on the spin-phonon coupling in multiferroic ordered double perovskites

In this paper we investigated the influence of the rare-earth ionic radii on the spin-phonon coupling in RE2NiMnO6 double perovskites by Raman spectroscopy. Spin-phonon in dense Nd2NiMnO6 and Gd2NiMnO6 ceramics were investigated by Raman spectroscopy at low temperatures. The magnitude of the coupling observed in comparison with other isostructural compounds shows that it is not influenced by the rare-earth ionic radius, as well as the deviation of the position of the stretching phonon in the ferromagnetic phase with relation to the anharmonic contributions follows a power law.

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preprint2012arXiv

Establishing micromagnetic parameters of ferromagnetic semiconductor (Ga,Mn)As

(Ga,Mn)As is at the forefront of research exploring the synergy of magnetism with the physics and technology of semiconductors, and has led to discoveries of new spin-dependent phenomena and functionalities applicable to a wide range of material systems. Its recognition and utility as an ideal model material for spintronics research has been undermined by the large scatter in reported semiconducting doping trends and micromagnetic parameters. In this paper we establish these basic material characteristics by individually optimizing the highly non-equilibrium synthesis for each Mn-doping level and by simultaneously determining all micromagnetic parameters from one set of magneto-optical pump-and-probe measurements. Our (Ga,Mn)As thin-film epilayers, spannig the wide range of accessible dopings, have sharp thermodynamic Curie point singularities typical of uniform magnetic systems. The materials show systematic trends of increasing magnetization, carrier density, and Curie temperature (reaching 188 K) with increasing doping, and monotonous doping dependence of the Gilbert damping constant of ~0.1-0.01 and the spin stiffness of ~2-3 meVnm^2. These results render (Ga,Mn)As well controlled degenerate semiconductor with basic magnetic characteristics comparable to common band ferromagnets.

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preprint2012arXiv

Influence of Magnetic Anisotropy on Laser-induced Precession of Magnetization in Ferromagnetic Semiconductor (Ga,Mn)As

The laser-induced precession of magnetization in (Ga,Mn)As samples with different magnetic anisotropy was studied by the time-resolved magneto-optical method. We observed that the dependence of the precession amplitude on the external magnetic field depends strongly on the magnetic anisotropy of (Ga,Mn)As and we explain this phenomenon in terms of competing cubic and uniaxial anisotropies. We also show that the corresponding anisotropy fields can be deduced from the magnetic field dependence of the precession frequency.

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preprint2011arXiv

CuMn-V compounds: a transition from semimetal low-temperature to semiconductor high-temperature antiferromagnets

We report on a theoretical and experimental study of CuMn-V antiferromagnets. Previous works showed low-temperature antiferomagnetism and semimetal electronic structure of the semi-Heusler CuMnSb. In this paper we present theoretical predictions of high-temperature antiferromagnetism in the stable orthorhombic phases of CuMnAs and CuMnP. The electronic structure of CuMnAs is at the transition from a semimetal to a semiconductor and we predict that CuMnP is a semiconductor. We show that the transition to a semiconductor-like band structure upon introducing the lighter group-V elements is present in both the metastable semi-Heusler and the stable orthorhombic crystal structures. On the other hand, the orthorhombic phase is crucial for the high Néel temperature. Results of X-ray diffraction, magnetization, transport, and neutron diffraction measurements we performed on chemically synthesized CuMnAs are consistent with the theory predictions.

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