Source author record

R. Moghadas Nia

R. Moghadas Nia appears in the imported research catalog. Authorship, coauthor and topic links are available while profile ownership is still unclaimed.

ResearcherUnclaimed source record

Catalog footprint

What is connected

2works
3topics
4close collaborators

Actions

Connect this record

Log in to claim

Research graph

See the researcher in context

Open full explorer

Inspect adjacent papers, topics, institutions and collaborators without losing the researcher page.

Building this map preview

BZPEER is loading the nearby papers, people, topics and institutions for this page.

Published work

2 published item(s)

preprint2020arXiv

Stationary optomechanical entanglement between a mechanical oscillator and its measurement apparatus

We provide an argument to infer stationary entanglement between light and a mechanical oscillator based on continuous measurement of light only. We propose an experimentally realizable scheme involving an optomechanical cavity driven by a resonant, continuous-wave field operating in the non-sideband-resolved regime. This corresponds to the conventional configuration of an optomechanical position or force sensor. We show analytically that entanglement between the mechanical oscillator and the output field of the optomechanical cavity can be inferred from the measurement of squeezing in (generalized) Einstein-Podolski-Rosen quadratures of suitable temporal modes of the stationary light field. Squeezing can reach levels of up to 50% of noise reduction below shot noise in the limit of large quantum cooperativity. Remarkably, entanglement persists even in the opposite limit of small cooperativity. Viewing the optomechanical device as a position sensor, entanglement between mechanics and light is an instance of object-apparatus entanglement predicted by quantum measurement theory.

preprint2014arXiv

Tensile strained $In_{x}Ga_{1-x}P$ membranes for cavity optomechanics

We investigate the optomechanical properties of tensile-strained ternary InGaP nanomembranes grown on GaAs. This material system combines the benefits of highly strained membranes based on stoichiometric silicon nitride, with the unique properties of thin-film semiconductor single crystals, as previously demonstrated with suspended GaAs. Here we employ lattice mismatch in epitaxial growth to impart an intrinsic tensile strain to a monocrystalline thin film (approximately 30 nm thick). These structures exhibit mechanical quality factors of 2*10^6 or beyond at room temperature and 17 K for eigenfrequencies up to 1 MHz, yielding Q*f products of 2*10^12 Hz for a tensile stress of ~170 MPa. Incorporating such membranes in a high finesse Fabry-Perot cavity, we extract an upper limit to the total optical loss (including both absorption and scatter) of 40 ppm at 1064 nm and room temperature. Further reductions of the In content of this alloy will enable tensile stress levels of 1 GPa, with the potential for a significant increase in the Q*f product, assuming no deterioration in the mechanical loss at this composition and strain level. This materials system is a promising candidate for the integration of strained semiconductor membrane structures with low-loss semiconductor mirrors and for realizing stacks of membranes for enhanced optomechanical coupling.