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R. Manzke

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Published work

3 published item(s)

preprint2016arXiv

Structural behavior of Pb$_y$Bi$_{1.95-y}$Sr$_{1.49}$La$_{0.4}$Cu$_{1.15}$O$_{6+δ}$ for 0<y<0.53

In the Bi cuprates, the presence of a near 1$\times$5 superstructure is well known. Usually, this superstructure is suppressed by the substitution of lead, but there have been reports of a phase separation in so called α and β phases. This paper shows in high detail time how and why the phase separation develops and what happens to the quasi-1$\times$5 superstructure upon lead substitution. For this purpose, the lanthanum- and lead-substituted single-layered superconductor Bi$_{2+z}$Sr$_{2-z}$CuO$_{6+δ}$ has been investigated by scanning tunneling microscopy and low-energy electron diffraction. The La content was kept constant at slightly under-doped concentration while the Pb content was changed systematically. Thermodynamic considerations show that a phase mixture of α and β phases is inevitable.

preprint2015arXiv

Comparative study of the electronic structures of the In and Sn/In2O3 (111) interfaces

The electronic structure of the transparent semiconductor In2O3 has been studied by angle resolved photoemission spectroscopy upon deposition of metallic indium and also tin on the surface of the semiconductor. By deposition of metallic indium on In2O3 (111) single crystals, we detected the formation of a free-electron like band of effective mass (0.38+-0.05) m0. At low coverages, metallic In shifts the Fermi level of In2O3 to higher energies and a new electronic state forms at the metal/semiconductor interface. This state of two-dimensional character (2D-electron gas) is completely responsible for the electrical conduction in In2O3 (111) at the surface region and has a band dispersion, which does not correspond to the previously found surface accumulation layers in this material. Despite the similarity of the electronic properties of In and Sn, a larger downward banding was observed by Sn coverage, which was not accompanied by the appearance of the surface state.

preprint2010arXiv

Anomalies in the superconducting dome of the Bi-cuprates

We report characterization results by energy dispersive x-ray analysis and AC-susceptibility for a statistically relevant number of single layer Bi-cuprate single crystals. We show that the two structurally quite different modifications of the single-layered Bi-cuprate, namely (La,Pb=0.4)-Bi2201 and La-Bi2201, exhibit anomalies in the superconducting transition temperature at certain hole doping, e.g. at 1/8 holes per Cu. These doping values agree well with the 'magic doping fractions' found in the temperature dependent resistance of LSCO by Komiya et al. This new set of findings suggests that all these anomalies are generic for the hole-doped high-temperature superconductors.