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R. M. Ribeiro

R. M. Ribeiro contributes to research discovery and scholarly infrastructure.

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Published work

9 published item(s)

preprint2022arXiv

Two limit cases of twisted hBN bilayers and their excitonic response

In this paper we discuss the optical response due to the excitonic effect of two types of hBN bilayers: AB and AA'. Understanding the properties of these bilayers is of great utility to the study of twisted bilayers at arbitrary angles, since these two configurations correspond to the limit cases of 0 and 60 degree rotation. To obtain the excitonic response we present a method to solve a four-band Bethe-Salpeter equation, by casting it into a 1D problem, thus greatly reducing the numerical burden of the calculation when compared with strictly 2D methods. We find results in good agreement with ab initio calculations already published in the literature for the AA' bilayer, and predict the excitonic conductivity of the AB bilayer, which remains largely unstudied. The main difference in the conductivity of these two types of bilayers is the appearance of a small, yet well resolved, resonance between two larger ones in the AB configuration. This resonance is due to a mainly interlayer exciton, and is absent in the AA' bilayer. Also, the conductivity of the AB bilayer is due to both intralayer and interlayer excitons and is dominated by p-states, while intralayer states are the relevant ones for the AA' configuration, like in a monolayer. The effect of introducing a bias in the AA' bilayer is also discussed.

preprint2013arXiv

Band nesting and the optical response of two-dimensional semiconducting transition metal dichalcogenides

We have studied the optical conductivity of two-dimensional (2D) semiconducting transition metal dichalcogenides (STMDC) using ab-initio density functional theory (DFT). We find that this class of materials presents large optical response due to the phenomenon of band nesting. The tendency towards band nesting is enhanced by the presence of van Hove singularities in the band structure of these materials. Given that 2D crystals are atomically thin and naturally transparent, our results show that it is possible to have strong photon-electron interactions even in 2D

preprint2013arXiv

Origin of indirect optical transitions in few-layer MoS2, WS2 and WSe2

It has been well established that single layer MX2 (M=Mo,W and X=S,Se) are direct gap semiconductors with band edges coinciding at the K point in contrast to their indirect gap multilayer counterparts. In few-layer MX2, there are two valleys along the Γ-K line with similar energy. There is little understanding on which of the two valleys forms the conduction band minimum (CBM) in this thickness regime. We investigate the conduction band valley structure in few-layer MX2 by examining the temperature-dependent shift of indirect exciton PL. Hihgly anisotropic thermal expansion of the lattice and corresponding evolution of the band structure result in distinct peak shift for indirect transitions involving the K and Λ (midpoint along Γ-K) valleys. We identify the origin of the indirect emission and concurrently determine the relative energy of these valleys. Our results show that the two valleys compete in energy in few-layer WSe2.

preprint2012arXiv

Efficient graphene-based photodetector with two cavities

We present an efficient graphene-based photodetector with two Fabri-Pérot cavities. It is shown that the absorption can reach almost 100% around a given frequency, which is determined by the two-cavity lengths. It is also shown that hysteresis in the absorbance is possible, with the transmittance amplitude of the mirrors working as an external driving field. The role of non-linear contributions to the optical susceptibility of graphene is discussed.

preprint2012arXiv

Enhanced Optical Dichroism of Graphene Nanoribbons

The optical conductivity of graphene nanoribbons is analytical and exactly derived. It is shown that the absence of translation invariance along the transverse direction allows considerable intra-band absorption in a narrow frequency window that varies with the ribbon width, and lies in the THz range domain for ribbons 10-100nm wide. In this spectral region the absorption anisotropy can be as high as two orders of magnitude, which renders the medium strongly dichroic, and allows for a very high degree of polarization (up to ~85) with just a single layer of graphene. The effect is resilient to level broadening of the ribbon spectrum potentially induced by disorder. Using a cavity for impedance enhancement, or a stack of few layer nanoribbons, these values can reach almost 100%. This opens a potential prospect of employing graphene ribbon structures as efficient polarizers in the far IR and THz frequencies.

preprint2011arXiv

Stability of boron nitride bilayers: Ground state energies, interlayer distances, and tight-binding description

We have studied boron nitride monolayer and bilayer band structures. For bilayers, the ground state energies of the different five stackings are computed using DFT in order to determine the most stable configuration. Also, the interlayer distance for the five different types of stacking in which boron-nitride bilayers can be found is determined. Using a minimal tight binding model for the band structures of boron nitride bilayers, the hopping parameters and the onsite energies have been extracted by fitting a tight binding empirical model to the DFT results.

preprint2011arXiv

Zigzag graphene nanoribbon edge reconstruction with Stone-Wales defects

In this article, we study zigzag graphene nanoribbons with edges reconstructed with Stone-Wales defects, by means of an empirical (first-neighbor) tight-binding method, with parameters determined by ab-initio calculations of very narrow ribbons. We explore the characteristics of the electronic band structure with a focus on the nature of edge states. Edge reconstruction allows the appearance of a new type of edge states. They are dispersive, with non-zero amplitudes in both sub-lattices; furthermore, the amplitudes have two components that decrease with different decay lengths with the distance from the edge; at the Dirac points one of these lengths diverges, whereas the other remains finite, of the order of the lattice parameter. We trace this curious effect to the doubling of the unit cell along the edge, brought about by the edge reconstruction. In the presence of a magnetic field, the zero-energy Landau level is no longer degenerate with edge states as in the case of pristine zigzag ribbon.

preprint2010arXiv

Excitonic effects in the optical conductivity of gated graphene

We study the effect of electron-electron interactions in the optical conductivity of graphene under applied bias and derive a generalization of Elliot's formula, commonly used for semiconductors, for the optical intensity. We show that {\it excitonic resonances} are responsible for several features of the experimentally measured mid-infrared response of graphene such as the increase of the conductivity beyond the "universal" value above the Fermi blocked regime, the broadening of the absorption at the threshold, and the decrease of the optical conductivity at higher frequencies. Our results are also in agreement with {\it ab initio} calculations in the neutral regime.

preprint2010arXiv

Optical Properties of Strained Graphene

The optical conductivity of graphene strained uniaxially is studied within the Kubo-Greenwood formalism. Focusing on inter-band absorption, we analyze and quantify the breakdown of universal transparency in the visible region of the spectrum, and analytically characterize the transparency as a function of strain and polarization. Measuring transmittance as a function of incident polarization directly reflects the magnitude and direction of strain. Moreover, direction-dependent selection rules permit identification of the lattice orientation by monitoring the van-Hove transitions. These photoelastic effects in graphene can be explored towards atomically thin, broadband optical elements.