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R. M. Osgood

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physics.optics cond-mat.mes-hall

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preprint2011arXiv

Trapping Surface Electrons on Graphene Layers and Islands

We report the use of time- and angle-resolved two-photon photoemission to map the bound, unoccupied electronic structure of the weakly coupled graphene/Ir(111) system. The energy, dispersion, and lifetime of the lowest three image-potential states are measured. In addition, the weak interaction between Ir and graphene permits observation of resonant transitions from an unquenched Shockley-type surface state of the Ir substrate to graphene/Ir image-potential states. The image-potential-state lifetimes are comparable to those of mid-gap clean metal surfaces. Evidence of localization of the excited electrons on single-atom-layer graphene islands is provided by coverage-dependent measurements.

preprint2009arXiv

Observations of zero-order bandgaps in negative-index photonic crystal superlattices at the near-infrared

We present the first observations of zero-n bandgaps in photonic crystal superlattices consisting of alternating stacks of negative index photonic crystals and positive index dielectric materials in the near-infrared. Guided by ab initio three-dimensional numerical simulations, the fabricated nanostructured superlattices demonstrate the presence of zero-order gaps in remarkable agreement with theoretical predictions across a range of different superlattice periods and unit cell variations. These volume-averaged zero-index superlattice structures present a new type of photonic band gap, with potential for complete wavefront control for arbitrary phase delay lines and open cavity resonances.

preprint2005arXiv

Enhanced stimulated Raman scattering in slow-light photonic crystal waveguides

We investigate for the first time the enhancement of the stimulated Raman scattering in slow-light Silicon-on-Insulator (SOI) photonic crystal line defect waveguides. By applying the Bloch-Floquet formalism to the guided modes in a planar photonic crystal, we develop a formalism that relates the intensity of the down-shifted Stokes signal to the pump intensity and the modal group velocities. The formalism is then applied to two prospective schemes for enhanced stimulated Raman generation in slow-light photonic crystal waveguides. The results demonstrate a maximum factor of 10^4 (66,000) enhancement with respect to SOI channel waveguides. Effects of two photon absorption, intrinsic scattering, and disorder with respect to slow-light Raman generation towards optically-pumped silicon amplifiers and lasers are also discussed.