BZPEERReading, trust and collaboration for research
Menu

Discover

GraphFollow connections around a paper, topic or saved view.

Workspaces

HomePick up where your research flow left off.InboxHandle requests, replies and notifications from one place.CollectionsCurate reading lists, evidence sets and shareable dossiers.ResearchSee your private provenance graph, trail and imports.CollaborationMove from discovery into focused discussion rooms.PublishDraft, preview and publish full-text research articles.

Network

ExpertsFind specialists worth following or asking for help.CommunitiesJoin research circles organized around shared work.PartnersSee external organizations active around the same topics.

Opportunities

ListingsBrowse roles, calls and collaborations with clearer fit signals.

Account

Log inReturn to your reading and collaboration workspace.Create accountStart saving work, following people and joining teams.
Log inCreate account

Researcher profile

R. M. Korkishko

R. M. Korkishko contributes to research discovery and scholarly infrastructure.

ResearcherAffiliation not importedOpen to collaborate
cond-mat.mtrl-sci

Trust snapshot

Quick read

Trust 17 - Baseline
4works
0followers
1topics
4close collaborators

Actions

Decide how to stay connected

Follow researcher0

Research graph

See the researcher in context

Open full explorer

Inspect adjacent work, topics, institutions and collaborators without jumping out to a separate graph page.

Building this graph slice

BZPEER is loading the nearby papers, people, topics and institutions for this page.

Published work

4 published item(s)

preprint2015arXiv

Analysis of the attainable efficiency of a direct-bandgap betavoltaic element

Conversion of energy of beta-particles into electric energy in a p-n junction based on direct-bandgap semiconductors, such as GaAs, considering realistic semiconductor system parameters is analyzed. An expression for the collection coefficient, $Q$, of the electron-hole pairs generated by beta-electrons is derived taking into account the existence of the dead layer. We show that the collection coefficient of beta-electrons emitted by a \Tr-source to a GaAs p-n junction is close to 1 in a broad range of electron lifetimes in the junction, ranging from $10^{-9}$ to $10^{-7}$ s. For the combination \Pm/GaAs, $Q$ is relatively large ($\ge 0.4$) only for quite long lifetimes (about $10^{-7}$ s) and large thicknesses (about $100\,μ$m) of GaAs p-n junctions. For realistic lifetimes of minority carriers and their diffusion coefficients, the open-circuit voltage realized due to the irradiation of a GaAs p-n junction by beta-particles is obtained. The attainable beta-conversion efficiency $η$ in the case of a \Tr/GaAs combination is found to exceed that of the \Pm/GaAs combination.

0 citations0 reviewsNo code linkedOpen access
preprint2015arXiv

Efficiency analysis of betavoltaic elements

The conversion of energy of electrons produced by a radioactive source into electricity in a Si and SiC $\textit{p-n}$ junctions is modeled. The features of the generation function describing the electron-hole pair production by an electron flow and the emergence of a "dead layer" are discussed. The collection efficiency, $Q$, describing the rate of electron-hole pair production by incident beta particles, is calculated taking into account the presence of the "dead layer". It is shown that in the case of high-grade Si $\textit{p-n}$ junctions, the collection efficiency, $Q$, of electron-hole pairs created by a high-energy electrons flux, e.g. Pm-147 beta flux, is close or equal to 1 in a wide range of electron energies. For SiC junctions, $Q$ is large enough (about 1) only for electrons with relatively low energies of about 5 keV, as produced, e.g., by a tritium source, and decreases rapidly with further increase of electron energy. The conditions, under which the influence of the "dead layer" on the collection efficiency is negligible, are determined. The open-circuit voltage is obtained for realistic values of the minority carriers' diffusion coefficient and lifetime in Si and SiC $\textit{p-n}$ junctions irradiated by a high-energy electrons flux. Our calculations allow us to estimate the attainable efficiency of betavoltaic elements.

0 citations0 reviewsNo code linkedOpen access
preprint2015arXiv

Modeling of high-efficiency silicon solar cells in realistic operating conditions

The selfconsistent model for the temperature dependence of photoconversion efficiency $η$ for highly efficient silicon solar cells (SCs) is developed. It is demonstrated that effect of the efficiency decrease due to increasing temperature is less pronounced in the SCs with lower surface recombination velocity, thus offering a possibility to improve the cells' performance. The photoconversion efficiency of the high efficiency silicon solar cells is modeled for the realistic ambient conditions. The SC operating temperature is determined by self-consistently solving the photocurrent, photovoltage, and energy balance equations, considering both radiative and convective cooling mechanisms. The SC temperature is shown to be substantially higher than the ambient temperature even at very high convection coefficients, such as, e.g., 300 $W / (m^2 \cdot K)$, used in our examples. The photoconversion efficiency for this case is substantially below the efficiency of thermally stabilized SC, for which the operating temperature is close to the external temperature. The open-circuit voltage and photoconversion efficiency of the high-quality silicon solar cells under concentrated illumination are also investigated including the tradeoff between SCs heating and cooling processes.

0 citations0 reviewsNo code linkedOpen access
preprint2015arXiv

Silicon solar cells efficiency analysis. Doping type and level optimization

The theoretical analysis of photovoltaic conversion efficiency of highly effective silicon solar cells (SC) is performed for n-type and p-type bases. The case is considered when the Shockley-Read-Hall recombination in the silicon bulk is determined by the deep level of Fe. It is shown that due to the asymmetry of the recombination parameters of this level the photovoltaic conversion efficiency is increasing in the SC with the n-type base and decreasing in the SC with the p-type base with the increase in doping. Two approximations for the band-to-band Auger recombination lifetime dependence on the base doping level are considered when performing the analysis. The experimental results are presented for the key characteristics of the solar cells based on $α-Si:H-n-Si$ heterojunctions with intrinsic thin layer (HIT). A comparison between the experimental and calculated values of the HIT cells characteristics is made. The surface recombination velocity and series resistance are determined from it with a complete coincidence of the experimental and calculated SC parameters' values.

0 citations0 reviewsNo code linkedOpen access