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Researcher profile

A. I. Shkrebtii

A. I. Shkrebtii contributes to research discovery and scholarly infrastructure.

ResearcherAffiliation not importedOpen to collaborate
cond-mat.mtrl-sci

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Published work

8 published item(s)

preprint2015arXiv

Analysis of the attainable efficiency of a direct-bandgap betavoltaic element

Conversion of energy of beta-particles into electric energy in a p-n junction based on direct-bandgap semiconductors, such as GaAs, considering realistic semiconductor system parameters is analyzed. An expression for the collection coefficient, $Q$, of the electron-hole pairs generated by beta-electrons is derived taking into account the existence of the dead layer. We show that the collection coefficient of beta-electrons emitted by a \Tr-source to a GaAs p-n junction is close to 1 in a broad range of electron lifetimes in the junction, ranging from $10^{-9}$ to $10^{-7}$ s. For the combination \Pm/GaAs, $Q$ is relatively large ($\ge 0.4$) only for quite long lifetimes (about $10^{-7}$ s) and large thicknesses (about $100\,μ$m) of GaAs p-n junctions. For realistic lifetimes of minority carriers and their diffusion coefficients, the open-circuit voltage realized due to the irradiation of a GaAs p-n junction by beta-particles is obtained. The attainable beta-conversion efficiency $η$ in the case of a \Tr/GaAs combination is found to exceed that of the \Pm/GaAs combination.

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preprint2015arXiv

Efficiency analysis of betavoltaic elements

The conversion of energy of electrons produced by a radioactive source into electricity in a Si and SiC $\textit{p-n}$ junctions is modeled. The features of the generation function describing the electron-hole pair production by an electron flow and the emergence of a "dead layer" are discussed. The collection efficiency, $Q$, describing the rate of electron-hole pair production by incident beta particles, is calculated taking into account the presence of the "dead layer". It is shown that in the case of high-grade Si $\textit{p-n}$ junctions, the collection efficiency, $Q$, of electron-hole pairs created by a high-energy electrons flux, e.g. Pm-147 beta flux, is close or equal to 1 in a wide range of electron energies. For SiC junctions, $Q$ is large enough (about 1) only for electrons with relatively low energies of about 5 keV, as produced, e.g., by a tritium source, and decreases rapidly with further increase of electron energy. The conditions, under which the influence of the "dead layer" on the collection efficiency is negligible, are determined. The open-circuit voltage is obtained for realistic values of the minority carriers' diffusion coefficient and lifetime in Si and SiC $\textit{p-n}$ junctions irradiated by a high-energy electrons flux. Our calculations allow us to estimate the attainable efficiency of betavoltaic elements.

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preprint2015arXiv

Modeling of high-efficiency silicon solar cells in realistic operating conditions

The selfconsistent model for the temperature dependence of photoconversion efficiency $η$ for highly efficient silicon solar cells (SCs) is developed. It is demonstrated that effect of the efficiency decrease due to increasing temperature is less pronounced in the SCs with lower surface recombination velocity, thus offering a possibility to improve the cells' performance. The photoconversion efficiency of the high efficiency silicon solar cells is modeled for the realistic ambient conditions. The SC operating temperature is determined by self-consistently solving the photocurrent, photovoltage, and energy balance equations, considering both radiative and convective cooling mechanisms. The SC temperature is shown to be substantially higher than the ambient temperature even at very high convection coefficients, such as, e.g., 300 $W / (m^2 \cdot K)$, used in our examples. The photoconversion efficiency for this case is substantially below the efficiency of thermally stabilized SC, for which the operating temperature is close to the external temperature. The open-circuit voltage and photoconversion efficiency of the high-quality silicon solar cells under concentrated illumination are also investigated including the tradeoff between SCs heating and cooling processes.

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preprint2014arXiv

Dynamical, Vibrational, Electronic and Optical Properties in c-Si:H with Bond-Centered-Hydrogen, H Dimers and Other H Complexes

Hydrogen, introduced into crystalline (c-) or amorphous (a-) silicon (Si), plays an important role in improving Si properties for photovoltaics application. Low temperature proton implantation in c-Si and a-Si or H-doping of Si films introduces metastable hydrogen in the bond-centered-position (BCH), which dissociates with increasing temperatures into new metastable complexes. Using ab-initio molecular dynamics we report on the stability of BCH, a convenient hydrogen model system, in crystalline Si and its temperature-induced dissociation products in a wide temperature range, which includes temperatures close to solar cell operating conditions. Particular attention was paid to the newly experimentally discovered H2** dimer, and the H2* dimer, as well as isolated interstitial hydrogen and monohydrides. Each complex leaves a characteristic signature in the frequency spectrum, the density of states (DOS) and in the imaginary part of the dielectric constant that agrees well with experiments. All complexes modify the vicinity of the energy gap of pure c-Si. BCH introduces characteristic donor levels, causing a strong peak in the DOS just below the intrinsic conduction band. The Fermi energy is raised, filling these donor states with two electrons and causing a strong peak in the imaginary part of the dielectric constant in the infrared. The H2** and H2* dimers introduce a low energy tail in the imaginary part of the dielectric constant. The results are important for experimental in-situ optical characterization of Si film growth that often involves hydrogen.

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preprint2014arXiv

Selfconsistent Model of Photoconversion Efficiency for Multijunction Solar Cells

To accurately calculate efficiencies $η$ of experimentally produced multijunction solar cells (MJSCs) and optimize their parameters, we offer semi-analytical photoconversion formalism that incorporates radiative recombination, Shockley-Read-Hall (SRH) recombination, surface recombination at the front and back surfaces of the cells, recombination in the space charge region (SCR) and the recombination at the heterojunction boundaries. Selfconsistent balance between the MJSC temperature and efficiency was imposed by jointly solving the equations for the photocurrent, photovoltage, and heat balance. Finally, we incorporate into the formalism the effect of additional photocurrent decrease with subcell number increase. It is shown that for an experimentally observed Shockley-Read-Hall lifetimes, the effect of re-absorption and re-emission of photons on MJSC efficiency can be neglected for non-concentrated radiation conditions. A significant efficiency $η$ increase can be achieved by improving the heat dissipation using radiators and bringing the MJSC emissivity to unity, that is closer to black body radiation rather than grey body radiation. Our calculated efficiencies compare well with other numerical results available and are consistent with the experimentally achieved efficiencies. The formalism can be used to optimize parameters of MJSCs for maximum photoconversion efficiency.

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preprint2013arXiv

A new approach to simulation of limiting photoconversion efficiency of tandem solar cells

We develop a new approach to calculate the obtainable limit of photoconversion efficiency of tandem solar cells (SCs) and applied it to SCs with both vertical and lateral designs at AM0 and AM1.5 conditions. To get the maximum efficiency, only radiative recombination has been considered using typical radiative recombination parameters of the direct band gap III-V semiconductors, and explicit energy dependence of light absorption. When simulating the efficiency, we selfconsistently took into account the fact that the amount of the heat dissipated by SC decreases as the number of current-matched sub-cells increases. As the operating SCs temperature decreases both the open-circuit voltage and the photoconversion efficiency increase. It is shown that the above effect is especially strong for SCs operating under AM0 conditions. As the number of subcells is increased, narrowing the spectral range for each subcell, the photocurrent is additionally reduced due to the energy dependent light absorption, the factor generally ignored in the standard approaches. Application of our formalism results in a maximum in the theoretical dependence of the efficiency on the number of subcells, which was indeed observed experimentally. Besides agreement with experiment, our theoretical results are also close to other efficiencies calculated using detailed balance based approaches.

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preprint2013arXiv

Multijunction solar cells efficiency simulation

The radiative recombination, Shokley-Read recombination, frontal-surface and rear-surface recombination and the recombination at the heterojunction boundaries and the recombination in the space charge region are considered in the calculation of the multijunction solar cell (MSC) efficiency. The calculation is performed by a self-consistent solution of the equations for the photocurrent and photovoltage, as well as the heat balance equation. A cooling of MSC with the increase of the number of cells n and the improvement in the heat dissipation is regarded. It was found that, as the number of cells n is increased, narrowing of spectral range for each cell causes additional reduction of current. A substantial increase in the MSC efficiency can be achieved by improving the heat extraction using radiators and increasing emissivity. A comparison is made between the calculated and experimental efficiency values. A rather good agreement was found. A comparison between this calculation and other formalisms is given.

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preprint2007arXiv

First-principles calculation of the temperature dependence of the optical response of bulk GaAs

A novel approach has been developed to calculate the temperature dependence of the optical response of a semiconductor. The dielectric function is averaged over several thermally perturbed configurations that are extracted from molecular dynamic simulations. The calculated temperature dependence of the imaginary part of the dielectric function of GaAs is presented in the range from 0 to 700 K. This approach that explicitly takes into account lattice vibrations describes well the observed thermally-induced energy shifts and broadening of the dielectric function.

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