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R. M. Jock

R. M. Jock appears in the imported research catalog. Authorship, coauthor and topic links are available while profile ownership is still unclaimed.

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2 published item(s)

preprint2015arXiv

Electron spin coherence of shallow donors in natural and isotopically enriched germanium

Germanium is a widely used material for electronic and optoelectronic devices and recently it has become an important material for spintronics and quantum computing applications. Donor spins in silicon have been shown to support very long coherence times ($T_{2}$) when the host material is isotopically enriched to remove any magnetic nuclei. Germanium also has non-magnetic isotopes so it is expected to support long $T_{2}$s while offering some new properties. Compared to Si, Ge has a strong spin-orbit coupling, large electron wavefunction, high mobility, and highly anisotropic conduction band valleys which will all give rise to new physics. In this Letter, the first pulsed electron spin resonance (ESR) measurements of $T_{2}$ and the spin-lattice relaxation ($T_1$) times for $^{75}$As and $^{31}$P donors in natural and isotopically enriched germanium are presented. We compare samples with various levels of isotopic enrichment and find that spectral diffusion due to $^{73}$Ge nuclear spins limits the coherence in samples with significant amounts of $^{73}$Ge. For the most highly enriched samples, we find that $T_1$ limits $T_2$ to $T_2 = 2T_1$. We report an anisotropy in $T_1$ and the ensemble linewidths for magnetic fields oriented along different crystal axes but do not resolve any angular dependence to the spectral-diffusion-limited $T_2$ in samples with $^{73}$Ge.

preprint2011arXiv

Probing Band-Tail States in Silicon MOS Heterostructures with Electron Spin Resonance

We present an electron spin resonance (ESR) approach to characterize shallow electron trapping in band-tail states at Si/SiO2 interfaces in metal-oxide-semiconductor (MOS) devices and demonstrate it on two MOS devices fabricated at different laboratories. Despite displaying similar low temperature (4.2 K) peak mobilities, our ESR data reveal a significant difference in the Si/SiO2 interface quality of these two devices, specifically an order of magnitude difference in the number of shallow trapped charges at the Si/SiO2 interfaces. Thus, our ESR method allows a quantitative evaluation of the Si/SiO2 interface quality at low electron densities, where conventional mobility measurements are not possible.