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R. Longuinhos

R. Longuinhos contributes to research discovery and scholarly infrastructure.

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cond-mat.mes-hall cond-mat.mtrl-sci

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preprint2016arXiv

Effects of Oxygen Contamination on Monolayer GeSe: A computational study

Natural oxidation is a common degradation mechanism of both mechanical and electronic properties for most of the new two-dimensional materials. From another perspective, controlled oxidation is an option to tune material properties, expanding possibilities for real-world applications. Understanding the electronic structure modifications induced by oxidation is highly desirable for new materials like monolayer GeSe, which is a new candidate for near-infrared photodetectors. By means of first-principles calculations, we study the influence of oxygen defects on the structure and electronic properties of the single layer GeSe. Our calculations show that the oxidation is an exothermic process, and it is nucleated in the germanium sites. The oxidation can cause severe local deformations on the monolayer GeSe structure and introduces a deep state in the bandgap or a shallow state near the conduction band edge. Furthermore, the oxidation increases the bandgap by up to 23 %, and may induce direct to indirect bandgap transitions. These results suggest that the natural or intentionally induced monolayer GeSe oxidation can be a source of new optoelectronic properties, adding another important building block to the two-dimensional layered materials.

preprint2014arXiv

Theoretical chemistry of $α$-graphyne: functionalization, symmetry breaking, and generation of Dirac-fermion mass

We investigate the electronic structure and lattice stability of pristine and functionalized (with either hydrogen or oxygen) $α$-graphyne systems. We identify lattice instabilities due to soft-phonon modes, and describe two mechanisms leading to gap opening in the Dirac-fermion electronic spectrum of these systems: symmetry breaking, connected with the lattice instabilities, and partial incorporation of an $sp^3$-hybrid character in the covalent-bonding network of a buckled hydrogenated $α$-graphyne lattice that retains the symmetries of the parent pristine $α$-graphyne. In the case of an oxygen-functionalized $α$-graphyne structure, each O atom binds asymmetrically to two twofold-coordinated C atoms, breaking inversion and mirror symmetries, and leading to the opening of a sizeable gap of 0.22 eV at the Dirac point. Generally, mirror symmetries are found to suffice for the occurrence of gapless Dirac cones in these $α$-graphyne systems, even in the absence of inversion symmetry centers. Moreover, we analyze the gapless and gapped Dirac cones of pristine and functionalized $α$-graphynes from the perspective of the dispersion relations for massless and massive free Dirac fermions. We find that mirror-symmetry breaking mimics a Dirac-fermion mass-generation mechanism in the oxygen-functionalized $α$-graphyne, leading to gap opening and to isotropic electronic dispersions with a rather small electron-hole asymmetry. In the hydrogen-functionalized case, we find that carriers show a remarkable anisotropy, behaving as massless fermions along the M-K line in the Brillouin zone and as massive fermions along the $Γ$-K line.