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Researcher profile

I. S. S. de Oliveira

I. S. S. de Oliveira contributes to research discovery and scholarly infrastructure.

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cond-mat.mtrl-scicond-mat.mes-hall

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Published work

3 published item(s)

preprint2016arXiv

An ab initio investigation of Bi$_2$Se$_3$ topological insulator deposited on amorphous SiO$_2$

We use first-principles simulations to investigate the topological properties of Bi$_2$Se$_3$ thin films deposited on amorphous SiO2, Bi$_2$Se$_3$/a-SiO$_2$, which is a promising substrate for topological insulator (TI) based device applications. The Bi$_2$Se$_3$ films are bonded to a-SiO$_2$ mediated by van der Waals interactions. Upon interaction with the substrate, the Bi$_2$Se$_3$ topological surface and interface states remain present, however the degeneracy between the Dirac-like cones is broken. The energy separation between the two Dirac-like cones increases with the number of Bi$_2$Se$_3$ quintuple layers (QLs) deposited on the substrate. Such a degeneracy breaking is caused by (i) charge transfer from the TI to the substrate and charge redistribution along the Bi$_2$Se$_3$ QLs, and (ii) by deformation of the QL in contact with the a-SiO$_2$ substrate. We also investigate the role played by oxygen vacancies (V$_O$) on the a-SiO$_2$, which increases the energy splitting between the two Dirac-like cones. Finally, by mapping the electronic structure of Bi$_2$Se$_3$/a-SiO$_2$, we found that the a-SiO$_2$ surface states, even upon the presence of V$_O$, play a minor role on gating the electronic transport properties of Bi$_2$Se$_3$.

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preprint2016arXiv

Effects of Oxygen Contamination on Monolayer GeSe: A computational study

Natural oxidation is a common degradation mechanism of both mechanical and electronic properties for most of the new two-dimensional materials. From another perspective, controlled oxidation is an option to tune material properties, expanding possibilities for real-world applications. Understanding the electronic structure modifications induced by oxidation is highly desirable for new materials like monolayer GeSe, which is a new candidate for near-infrared photodetectors. By means of first-principles calculations, we study the influence of oxygen defects on the structure and electronic properties of the single layer GeSe. Our calculations show that the oxidation is an exothermic process, and it is nucleated in the germanium sites. The oxidation can cause severe local deformations on the monolayer GeSe structure and introduces a deep state in the bandgap or a shallow state near the conduction band edge. Furthermore, the oxidation increases the bandgap by up to 23 %, and may induce direct to indirect bandgap transitions. These results suggest that the natural or intentionally induced monolayer GeSe oxidation can be a source of new optoelectronic properties, adding another important building block to the two-dimensional layered materials.

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preprint2015arXiv

Pyridine intercalated Bi$_2$Se$_3$ heterostructures: controlling the topologically protected states

We use ab initio simulations to investigate the incorporation of pyridine molecules (C$_5$H$_5$N) in the van der Waals gaps of Bi$_2$Se$_3$. The intercalated pyridine molecules increase the separation distance between the Bi$_2$Se$_3$ quintuple layers (QLs), suppressing the parity inversion of the electronic states at the $Γ$-point. We find that the intercalated region becomes a trivial insulator. By combining the pristine Bi$_2$Se$_3$ region with the one intercalated by the molecules, we have a non-trivial/trivial heterojunction characterized by the presence of (topologically protected) metallic states at the interfacial region. Next we apply an external compressive pressure to the system, and the results are (i) a decrease on the separation distance between the QLs intercalated by pyridine molecules, and (ii) the metallic states are shifted toward the bulk region, turning the system back to insulator. That is, through a suitable tuning of the external pressure in Bi$_2$Se$_3$, intercalated by pyridine molecules, we can control its topological properties; turning-on and -off the topologically protected metallic states lying at the non-trivial/trivial interface.

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