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R. Lo Conte

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cond-mat.mes-hall cond-mat.mtrl-sci

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preprint2014arXiv

Interfacial Dzyaloshinskii-Moriya interaction in Ta\Co20Fe60B20\MgO nanowires

We report current-induced domain wall motion (CIDWM) in Ta\Co20Fe60B20\MgO nanowires. Domain walls are observed to move against the electron flow when no magnetic field is applied, while a field along the nanowires strongly affects the domain wall motion direction and velocity. A symmetric effect is observed for up-down and down-up domain walls. This indicates the presence of right-handed domain walls, due to a Dzyaloshinskii-Moriya interaction (DMI) with a DMI coefficient D=+0.06 mJ/m2. The positive DMI coefficient is interpreted to be a consequence of boron diffusion into the tantalum buffer layer during annealing. In a Pt\Co68Fe22B10\MgO nanowire CIDWM along the electron flow was observed, corroborating this interpretation. The experimental results are compared to 1D-model simulations including the effects of pinning. This advanced modelling allows us to reproduce the experiment outcomes and reliably extract a spin-Hall angle θSH=-0.11 for Ta in the nanowires, showing the importance of an analysis that goes beyond the currently used model for perfect nanowires.

preprint2014arXiv

Spin-orbit torque-driven magnetization switching and thermal effects studied in Ta\CoFeB\MgO nanowires

We demonstrate magnetization switching in out-of-plane magnetized Ta\CoFeB\MgO nanowires by current pulse injection along the nanowires, both with and without a constant and uniform magnetic field collinear to the current direction. We deduce that an effective torque arising from spin-orbit effects in the multilayer drives the switching mechanism. While the generation of a component of the magnetization along the current direction is crucial for the switching to occur, we observe that even without a longitudinal field thermally generated magnetization fluctuations can lead to switching. Analysis using a generalized Néel-Brown model enables key parameters of the thermally induced spin-orbit torques switching process to be estimated, such as the attempt frequency and the effective energy barrier.

preprint2012arXiv

Sub-10 nm colloidal lithography for integrated spin-photo-electronic devices

Colloidal lithography [1] is how patterns are reproduced in a variety of natural systems and is used more and more as an efficient fabrication tool in bio-, opto-, and nano-technology. Nanoparticles in the colloid are made to form a mask on a given material surface, which can then be transferred via etching into nano-structures of various sizes, shapes, and patterns [2,3]. Such nanostructures can be used in biology for detecting proteins [4] and DNA [5,6], for producing artificial crystals in photonics [7,8] and GHz oscillators in spin-electronics [9-14]. Scaling of colloidal patterning down to 10-nm and below, dimensions comparable or smaller than the main relaxation lengths in the relevant materials, including metals, is expected to enable a variety of new ballistic transport and photonic devices, such as spin-flip THz lasers [15]. In this work we extend the practice of colloidal lithography to producing large-area, near-ballistic-injection, sub-10 nm point-contact arrays and demonstrate their integration in to spin-photo-electronic devices.