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T. A. Moore

T. A. Moore appears in the imported research catalog. Authorship, coauthor and topic links are available while profile ownership is still unclaimed.

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cond-mat.mes-hallcond-mat.mtrl-sci

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Published work

9 published item(s)

preprint2025arXiv

Materials for Quantum Technologies: a Roadmap for Spin and Topology

In this Perspective article, we explore some of the promising spin and topology material platforms (e.g. spins in semi- and superconductors, skyrmionic, topological and 2D materials) being developed for such quantum components as qubits, superconducting memories, sensing, and metrological standards and discuss their figures of merit. Spin- and topology-related quantum phenomena have several advantages, including high coherence time, topological protection and stability, low error rate, relative ease of engineering and control, simple initiation and read-out. However, the relevant technologies are at different stages of research and development, and here we discuss their state-of-the-art, potential applications, challenges and solutions.

0 citations0 reviewsNo code linkedOpen access
preprint2016arXiv

Effect of annealing on the interfacial Dzyaloshinskii-Moriya interaction in Ta/CoFeB/MgO trilayers

The interfacial Dzyaloshinskii-Moriya interaction (DMI) has been shown to stabilize homochiral Néel-type domain walls in thin films with perpendicular magnetic anisotropy and as a result permit them to be propagated by a spin Hall torque. In this study, we demonstrate that in Ta/Co$_{20}$Fe$_{60}$B$_{20}$/MgO the DMI may be influenced by annealing. We find that the DMI peaks at $D=0.057\pm0.003$ mJ/m$^{2}$ at an annealing temperature of 230 $^{\circ}$C. DMI fields were measured using a purely field-driven creep regime domain expansion technique. The DMI field and the anisotropy field follow a similar trend as a function of annealing temperature. We infer that the behavior of the DMI and the anisotropy are related to interfacial crystal ordering and B expulsion out of the CoFeB layer as the annealing temperature is increased.

0 citations0 reviewsNo code linkedOpen access
preprint2016arXiv

Exchange magnon induced resistance asymmetry in permalloy spin-Hall oscillators

We investigate magnetization dynamics in a spin-Hall oscillator using a direct current measurement as well as conventional microwave spectrum analysis. When the current applies an anti-damping spin-transfer torque, we observe a change in resistance which we ascribe to the excitation of incoherent exchange magnons. A simple model is developed based on the reduction of the effective saturation magnetization, quantitatively explaining the data. The observed phenomena highlight the importance of exchange magnons on the operation of spin-Hall oscillators.

0 citations0 reviewsNo code linkedOpen access
preprint2015arXiv

Electrical manipulation of a ferromagnet by an antiferromagnet

We demonstrate that an antiferromagnet can be employed for a highly efficient electrical manipulation of a ferromagnet. In our study we use an electrical detection technique of the ferromagnetic resonance driven by an in-plane ac-current in a NiFe/IrMn bilayer. At room temperature, we observe antidamping-like spin torque acting on the NiFe ferromagnet, generated by the in-plane current driven through the IrMn antiferromagnet. A large enhancement of the torque, characterized by an effective spin-Hall angle exceeding most heavy transition metals, correlates with the presence of the exchange-bias field at the NiFe/IrMn interface. It highlights that, in addition to strong spin-orbit coupling, the antiferromagnetic order in IrMn governs the observed phenomenon.

0 citations0 reviewsNo code linkedOpen access
preprint2015arXiv

Modification of perpendicular magnetic anisotropy and domain wall velocity in Pt/Co/Pt by voltage-induced strain

The perpendicular magnetic anisotropy K$_e$$_f$$_f$, magnetization reversal, and field-driven domain wall velocity in the creep regime are modified in Pt/Co(0.85-1.0 nm)/Pt thin films by strain applied via piezoelectric transducers. K$_e$$_f$$_f$, measured by the extraordinary Hall effect, is reduced by 10 kJ/m$^3$ by tensile strain out-of-plane ε$_z$ = 9 x 10-4, independently of the film thickness, indicating a dominant volume contribution to the magnetostriction. The same strain reduces the coercive field by 2-4 Oe, and increases the domain wall velocity measured by wide-field Kerr microscopy by 30-100 %, with larger changes observed for thicker Co layers. We consider how strain-induced changes in the perpendicular magnetic anisotropy can modify the coercive field and domain wall velocity.

0 citations0 reviewsNo code linkedOpen access
preprint2014arXiv

DMI meter: Measuring the Dzyaloshinskii-Moriya interaction inversion in Pt/Co/Ir/Pt multilayers

We describe a field-driven domain wall creep-based method for the quantification of interfacial Dzyaloshinskii-Moriya interactions (DMI) in perpendicularly magnetized thin films. The use of only magnetic fields to drive wall motion removes the possibility of mixing with current-related effects such as spin Hall effect or Rashba field, as well as the complexity arising from lithographic patterning. We demonstrate this method on sputtered Pt/Co/Ir/Pt multilayers with a variable Ir layer thickness. By inserting an ultrathin layer of Ir at the Co/Pt interface we can reverse the sign of the effective DMI acting on the sandwiched Co layer, and therefore continuously change the domain wall (DW) structure from right- to the left-handed Néel wall. We also show that the DMI shows exquisite sensitivity to the exact details of the atomic structure at the film interfaces by comparison with a symmetric epitaxial Pt/Co/Pt multilayer.

0 citations0 reviewsNo code linkedOpen access
preprint2014arXiv

Interfacial Dzyaloshinskii-Moriya interaction in Ta\Co20Fe60B20\MgO nanowires

We report current-induced domain wall motion (CIDWM) in Ta\Co20Fe60B20\MgO nanowires. Domain walls are observed to move against the electron flow when no magnetic field is applied, while a field along the nanowires strongly affects the domain wall motion direction and velocity. A symmetric effect is observed for up-down and down-up domain walls. This indicates the presence of right-handed domain walls, due to a Dzyaloshinskii-Moriya interaction (DMI) with a DMI coefficient D=+0.06 mJ/m2. The positive DMI coefficient is interpreted to be a consequence of boron diffusion into the tantalum buffer layer during annealing. In a Pt\Co68Fe22B10\MgO nanowire CIDWM along the electron flow was observed, corroborating this interpretation. The experimental results are compared to 1D-model simulations including the effects of pinning. This advanced modelling allows us to reproduce the experiment outcomes and reliably extract a spin-Hall angle θSH=-0.11 for Ta in the nanowires, showing the importance of an analysis that goes beyond the currently used model for perfect nanowires.

0 citations0 reviewsNo code linkedOpen access
preprint2014arXiv

Spin-orbit torque-driven magnetization switching and thermal effects studied in Ta\CoFeB\MgO nanowires

We demonstrate magnetization switching in out-of-plane magnetized Ta\CoFeB\MgO nanowires by current pulse injection along the nanowires, both with and without a constant and uniform magnetic field collinear to the current direction. We deduce that an effective torque arising from spin-orbit effects in the multilayer drives the switching mechanism. While the generation of a component of the magnetization along the current direction is crucial for the switching to occur, we observe that even without a longitudinal field thermally generated magnetization fluctuations can lead to switching. Analysis using a generalized Néel-Brown model enables key parameters of the thermally induced spin-orbit torques switching process to be estimated, such as the attempt frequency and the effective energy barrier.

0 citations0 reviewsNo code linkedOpen access
preprint2010arXiv

Domain-wall depinning assisted by pure spin currents

We study the depinning of domain walls by pure diffusive spin currents in a nonlocal spin valve structure based on two ferromagnetic permalloy elements with copper as the nonmagnetic spin conduit. The injected spin current is absorbed by the second permalloy structure with a domain wall and from the dependence of the wall depinning field on the spin current density we find an efficiency of 6*10^{-14}T/(A/m^2), which is more than an order of magnitude larger than for conventional current induced domain wall motion. Theoretically we reproduce this high efficiency, which arises from the surface torques exerted by the absorbed spin current that lead to efficient depinning.

0 citations0 reviewsNo code linkedOpen access