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R. Leturcq

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cond-mat.mes-hall cond-mat

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preprint2008arXiv

Self-aligned charge read-out for InAs nanowire quantum dots

A highly sensitive charge detector is realized for a quantum dot in an InAs nanowire. We have developed a self-aligned etching process to fabricate in a single step a quantum point contact in a two-dimensional electron gas and a quantum dot in an InAs nanowire. The quantum dot is strongly coupled to the underlying point contact which is used as a charge detector. The addition of one electron to the quantum dot leads to a change of the conductance of the charge detector by typically 20%. The charge sensitivity of the detector is used to measure Coulomb diamonds as well as charging events outside the dot. Charge stability diagrams measured by transport through the quantum dot and charge detection merge perfectly.

preprint2008arXiv

Time-resolved detection of single-electron interference

We demonstrate real-time detection of self-interfering electrons in a double quantum dot embedded in an Aharonov-Bohm interferometer, with visibility approaching unity. We use a quantum point contact as a charge detector to perform time-resolved measurements of single-electron tunneling. With increased bias voltage, the quantum point contact exerts a back-action on the interferometer leading to decoherence. We attribute this to emission of radiation from the quantum point contact, which drives non-coherent electronic transitions in the quantum dots.

preprint2007arXiv

Measurements of higher order noise correlations in a quantum dot with a finite bandwidth detector

We present measurements of the fourth and fifth cumulants of the distribution of transmitted charge in a tunable quantum dot. We investigate how the measured statistics is influenced by the finite bandwidth of the detector and by the finite measurement time. By including the detector when modeling the system, we use the theory of full counting statistics to calculate the noise levels for the combined system. The predictions of the finite-bandwidth model are in good agreement with measured data.

preprint2006arXiv

Top-gate defined double quantum dots in InAs nanowires

We present low temperature transport measurements on double quantum dots in InAs nanowires grown by metal-organic vapor phase epitaxy. Two dots in series are created by lithographically defined top-gates with a procedure involving no extra insulating layer. We demonstrate the full tunability from strong to weak coupling between the dots. The quantum mechanical nature of the coupling leads to the formation of a molecular state extending over both dots. The excitation spectra of the individual dots are observable by their signatures in the nonlinear transport.

preprint2001arXiv

Heating of Two-Dimensional Holes in SiGe and the B = 0 Metal-Insulator Transition

We study the resistivity vs. electric field dependence $ρ(E)$ of a 2D hole system in SiGe close to the B=0 metal-insulator transition. Using $ρ$ as a ``thermometer'' to obtain the effective temperature of the holes $T_e(E)$, we find that the $ρ(E)$ dependence can be attributed to hole heating. The hole-phonon coupling involves weakly screened piezoelectric and deformation potentials compatible with previous measurements. The damping of the Shubnikov-de Haas oscillations gives the same $T_e$ values. Thus the $ρ(E)$ dependence and the $E$-field ``scaling'' do not provide additional evidence for a quantum phase transition (QPT). We discuss how to study, in general, true $E$-field scaling and extract the ratio of the QPT characteristic lengths.