Researcher profile

R. K. Rakshit

R. K. Rakshit contributes to research discovery and scholarly infrastructure.

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Published work

3 published item(s)

preprint2016arXiv

Griffiths phase and critical behavior in layered Sr$_2$IrO$_4$ ferromagnet

We report the existence of Griffiths phase (GP) and its influence on critical phenomena in layered Sr$_2$IrO$_4$ ferromagnet (T$_C$ = 221.5 K). The power law behavior of inverse magentic susceptibility, 1/$χ$(T) with exponent $λ= 0.18(2)$ confirm the GP in the regime T$_C$ $<$ T $\leq$ T$_G$ = 279.0(5) K. Moreover, the detailed critical analysis via modified Arrott plot method exhibits unrealistic critical exponents $β$ = 0.77(1), $γ$ = 1.59(2) and $δ= 3.06(4)$, in corroboration with magneto-caloric study. The abnormal exponent values have been viewed in context of ferromagnetic-Griffiths phase transition. The GP has been further analyzed using Bray model, which yields a reliable value of $β$ = 0.19(2), belonging to the two-dimensional (2D) XYh$_4$ universality class with strong anisotropy present in Sr$_2$IrO$_4$. The present study proposes Bray model as a possible tool to investigate the critical behavior for Griffiths ferromagnets in place of conventional Arrott plot analysis. The possible origins of GP and its correlation with insulating nature of Sr$_2$IrO$_4$ have been discussed.

preprint2015arXiv

Resistance minimum and electrical conduction mechanism in polycrystalline CoFeB thin films

The temperature dependent resistance $R$($T$) of polycrystalline ferromagnetic CoFeB thin films of varying thickness are analyzed considering various electrical scattering processes. We observe a resistance minimum in $R$($T$) curves below $\simeq$ 29 K, which can be explained as an effect of intergranular Coulomb interaction in a granular system. The structural and Coulomb interaction related scattering processes contribute more as the film thickness decreases implying the role of disorder and granularity. Although the magnetic contribution to the resistance is the weakest compared to these two, it is the only thickness independent process. On the contrary, the negative coefficient of resistance can be explained by electron interaction effect in disordered amorphous films.

preprint2013arXiv

Effect of Thermal Annealing on Boron Diffusion, Micro-structural, Electrical and Magnetic properties of Laser Ablated CoFeB Thin Films

We report on Boron diffusion and subsequent crystallization of Co$_{40}$Fe$_{40}$B$_{20}$ (CoFeB) thin films on SiO$_2$/Si(001) substrate using pulsed laser deposition. Secondary ion mass spectroscopy reveals Boron diffusion at the interface in both amorphous and crystalline phase of CoFeB. High-resolution transmission electron microscopy reveals a small fraction of nano-crystallites embedded in the amorphous matrix of CoFeB. However, annealing at 400$^\circ$C results in crystallization of CoFe with \textit{bcc} structure along (110) orientation. As-deposited films are non-metallic in nature with the coercivity (H$_c$) of 5Oe while the films annealed at 400$^\circ$C are metallic with a H$_c$ of 135Oe.