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Researcher profile

R. K. Lake

R. K. Lake contributes to research discovery and scholarly infrastructure.

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Published work

4 published item(s)

preprint2019arXiv

Electric Switching of the Charge-Density-Wave and Normal Metallic Phases in Tantalum Disulfide Thin-Film Devices

We report on switching among three charge-density-wave phases - commensurate, nearly commensurate, incommensurate - and the high-temperature normal metallic phase in thin-film 1T-TaS2 devices induced by application of an in-plane electric field. The electric switching among all phases has been achieved over a wide temperature range, from 77 K to 400 K. The low-frequency electronic noise spectroscopy has been used as an effective tool for monitoring the transitions, particularly the switching from the incommensurate charge-density-wave phase to the normal metal phase. The noise spectral density exhibits sharp increases at the phase transition points, which correspond to the step-like changes in resistivity. Assignment of the phases is consistent with low-field resistivity measurements over the temperature range from 77 K to 600 K. Analysis of the experimental data and calculations of heat dissipation suggest that Joule heating plays a dominant role in the electric-field induced transitions in the tested 1T-TaS2 devices on Si/SiO2 substrates. The possibility of electrical switching among four different phases of 1T-TaS2 is a promising step toward nanoscale device applications. The results also demonstrate the potential of noise spectroscopy for investigating and identifying phase transitions in materials.

0 citations0 reviewsNo code linkedOpen access
preprint2015arXiv

The Commensurate-Incommensurate Charge-Density-Wave Transition and Phonon Zone Folding in 1T-TaSe2 Thin Films

Bulk 1T-TaSe2 exhibits unusually high charge density wave (CDW) transition temperatures of 600 K and 473 K below which the material exists in the incommensurate (I-CDW) and the commensurate (C-CDW) charge-density-wave phases, respectively. The C-CDW reconstruction of the lattice coincides with new Raman peaks resulting from zone-folding of phonon modes from middle regions of the original Brillouin zone back to the Gamma point. The C-CDW transition temperatures as a function of film thickness are determined from the evolution of these new Raman peaks and they are found to decrease from 473K to 413K as the film thicknesses decrease from 150 nm to 35 nm. A comparison of the Raman data with ab initio calculations of both the normal and C-CDW phases gives a consistent picture of the zone-folding of the phonon modes following lattice reconstruction. In the I-CDW phase, the loss of translational symmetry coincides with a strong suppression and broadening of the Raman peaks. The observed change in the C-CDW transition temperature is consistent with total energy calculations of bulk and monolayer 1T-TaSe2.

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preprint2013arXiv

All-Metallic Electrically-Gated Tantalum Diselenide Switches and Logic Circuits

We report the fabrication and performance of all-metallic three-terminal devices with tantalum diselenide thin-film conducting channels. For this proof-of-concept demonstration, the layers of 2H-TaSe2 were exfoliated mechanically from single crystals grown by the chemical vapor transport method. Devices with nanometer-scale thicknesses exhibit strongly non-linear current-voltage characteristics, unusual optical response, and electrical gating at room temperature. We have found that the drain-source current in thin-film 2H-TaSe2-Ti/Au devices reproducibly shows an abrupt transition from a highly resistive to a conductive state, with the threshold tunable via the gate voltage. Such current-voltage characteristics can be used in principle for implementing radiation-hard all-metallic logic circuits. These results may open new application space for thin films of van der Waals materials.

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preprint2012arXiv

Anomalous Electron Transport in Field-Effect Transistors with Titanium Ditelluride Semimetal Thin-Film Channels

We report on "graphene-like" mechanical exfoliation of thin films of titanium ditelluride and investigation of their electronic properties. The exfoliated crystalline TiTe2 films were used as the channel layers in the back-gated field-effect transistors fabricated with Ti/Al/Au metal contacts on SiO2/Si substrates. The room-temperature current-voltage characteristics revealed strongly non-linear behavior with signatures of the source-drain threshold voltage similar to those observed in the charge-density-wave devices. The drain-current showed an unusual non-monotonic dependence on the gate bias characterized by the presence of multiple peaks. The obtained results can be potentially used for implementation of the non-Boolean logic gates.

0 citations0 reviewsNo code linkedOpen access