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Researcher profile

R. K. Kawakami

R. K. Kawakami contributes to research discovery and scholarly infrastructure.

ResearcherAffiliation not importedOpen to collaborate
cond-mat.mtrl-scicond-mat.mes-hallcond-mat.otherquant-ph

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Published work

16 published item(s)

preprint2013arXiv

Measuring the Casimir force gradient from graphene on a SiO_2 substrate

The gradient of the Casimir force between a Si-SiO${}_2$-graphene substrate and an Au-coated sphere is measured by means of a dynamic atomic force microscope operated in the frequency shift technique. It is shown that the presence of graphene leads to up to 9% increase in the force gradient at the shortest separation considered. This is in qualitative agreement with the predictions of an additive theory using the Dirac model of graphene.

0 citations0 reviewsNo code linkedOpen access
preprint2013arXiv

Spin accumulation detection of FMR driven spin pumping in silicon-based metal-oxide-semiconductor heterostructures

The use of the spin Hall effect and its inverse to electrically detect and manipulate dynamic spin currents generated via ferromagnetic resonance (FMR) driven spin pumping has enabled the investigation of these dynamically injected currents across a wide variety of ferromagnetic materials. However, while this approach has proven to be an invaluable diagnostic for exploring the spin pumping process it requires strong spin-orbit coupling, thus substantially limiting the materials basis available for the detector/channel material (primarily Pt, W and Ta). Here, we report FMR driven spin pumping into a weak spin-orbit channel through the measurement of a spin accumulation voltage in a Si-based metal-oxide-semiconductor (MOS) heterostructure. This alternate experimental approach enables the investigation of dynamic spin pumping in a broad class of materials with weak spin-orbit coupling and long spin lifetime while providing additional information regarding the phase evolution of the injected spin ensemble via Hanle-based measurements of the effective spin lifetime.

0 citations0 reviewsNo code linkedOpen access
preprint2012arXiv

TiO2 as an electrostatic template for epitaxial growth of EuO on MgO(001) by reactive molecular beam epitaxy

We investigate the initial growth modes and the role of interfacial electrostatic interactions of EuO epitaxy on MgO(001) by reactive molecular beam epitaxy. A TiO2 interfacial layer is employed to produce high quality epitaxial growth of EuO on MgO(001) with a 45° in plane rotation. For comparison, direct deposition of EuO on MgO, without the TiO2 layer shows a much slower time evolution in producing a single crystal film. Conceptual arguments of electrostatic repulsion of like-ions are introduced to explain the increased EuO quality at the interface with the TiO2 layer. It is shown that ultrathin EuO films in the monolayer regime can be produced on the TiO2 surface by substrate-supplied oxidation and that such films have bulk-like magnetic properties.

0 citations0 reviewsNo code linkedOpen access
preprint2011arXiv

Enhancement of Spin Injection into Graphene by Water Dipping

We immerse single layer graphene spin valves into purified water for a short duration (<1 min) and investigate the effect on spin transport. Following water immersion, we observe an enhancement in nonlocal magnetoresistance. Additionally, the enhancement of spin signal is correlated with an increase in junction resistance, which produces an increase in spin injection efficiency. This study provides a simple way to improve the signal magnitude and establishes the robustness of graphene spin valves to water exposure, which enables future studies involving chemical functionalization in aqueous solution.

0 citations0 reviewsNo code linkedOpen access
preprint2011arXiv

Metallic and Insulating Adsorbates on Graphene

We directly compare the effect of metallic titanium (Ti) and insulating titanium dioxide (TiO2) on the transport properties of single layer graphene. The deposition of Ti results in substantial n-type doping and a reduction of graphene mobility by charged impurity scattering. Subsequent exposure to oxygen largely reduces the doping and scattering by converting Ti into TiO2. In addition, we observe evidence for short-range scattering by TiO2 impurities. These results illustrate the contrasting scattering mechanisms for identical spatial distributions of metallic and insulating adsorbates.

0 citations0 reviewsNo code linkedOpen access
preprint2011arXiv

Spin Transport and Relaxation in Graphene

We review our recent work on spin injection, transport and relaxation in graphene. The spin injection and transport in single layer graphene (SLG) were investigated using nonlocal magnetoresistance (MR) measurements. Spin injection was performed using either transparent contacts (Co/SLG) or tunneling contacts (Co/MgO/SLG). With tunneling contacts, the nonlocal MR was increased by a factor of ~1000 and the spin injection/detection efficiency was greatly enhanced from ~1% (transparent contacts) to ~30%. Spin relaxation was investigated on graphene spin valves using nonlocal Hanle measurements. For transparent contacts, the spin lifetime was in the range of 50-100 ps. The effects of surface chemical doping showed that for spin lifetimes on the order of 100 ps, impurity scattering (Au) was not the dominant mechanism for spin relaxation. While using tunneling contacts to suppress the contact-induced spin relaxation, we observed the spin lifetimes as long as 771 ps at room temperature, 1.2 ns at 4 K in SLG, and 6.2 ns at 20 K in bilayer graphene (BLG). Furthermore, contrasting spin relaxation behaviors were observed in SLG and BLG. We found that Elliot-Yafet spin relaxation dominated in SLG at low temperatures whereas Dyakonov-Perel spin relaxation dominated in BLG at low temperatures. Gate tunable spin transport was studied using the SLG property of gate tunable conductivity and incorporating different types of contacts (transparent and tunneling contacts). Consistent with theoretical predictions, the nonlocal MR was proportional to the SLG conductivity for transparent contacts and varied inversely with the SLG conductivity for tunneling contacts. Finally, bipolar spin transport in SLG was studied and an electron-hole asymmetry was observed for SLG spin valves with transparent contacts...

0 citations0 reviewsNo code linkedOpen access
preprint2010arXiv

Epitaxial EuO Thin Films on GaAs

We demonstrate the epitaxial growth of EuO on GaAs by reactive molecular beam epitaxy. Thin films are grown in an adsorption-controlled regime with the aid of an MgO diffusion barrier. Despite the large lattice mismatch, it is shown that EuO grows well on MgO(001) with excellent magnetic properties. Epitaxy on GaAs is cube-on-cube and longitudinal magneto-optic Kerr effect measurements demonstrate a large Kerr rotation of 0.57°, a significant remanent magnetization, and a Curie temperature of 69 K.

0 citations0 reviewsNo code linkedOpen access
preprint2010arXiv

Manipulation of Spin Transport in Graphene by Surface Chemical Doping

The effects of surface chemical doping on spin transport in graphene are investigated by performing non-local measurements in ultrahigh vacuum while depositing gold adsorbates. We demonstrate manipulation of the gate-dependent non-local spin signal as a function of gold coverage. We discover that charged impurity scattering is not the dominant mechanism for spin relaxation in graphene, despite its importance for momentum scattering. Finally, unexpected enhancements of the spin lifetime illustrate the complex nature of spin relaxation in graphene.

0 citations0 reviewsNo code linkedOpen access
preprint2010arXiv

Oscillatory Spin Polarization and Magneto-Optic Kerr Effect in Fe3O4 Thin Films on GaAs(001)

The spin dependent properties of epitaxial Fe3O4 thin films on GaAs(001) are studied by the ferromagnetic proximity polarization (FPP) effect and magneto-optic Kerr effect (MOKE). Both FPP and MOKE show oscillations with respect to Fe3O4 film thickness, and the oscillations are large enough to induce repeated sign reversals. We attribute the oscillatory behavior to spin-polarized quantum well states forming in the Fe3O4 film. Quantum confinement of the t2g states near the Fermi level provides an explanation for the similar thickness dependences of the FPP and MOKE oscillations.

0 citations0 reviewsNo code linkedOpen access
preprint2010arXiv

Tailoring Interlayer Exchange Coupling of Ferromagnetic Films Across MgO with Fe Nanoclusters

We investigate the interlayer exchange coupling in Fe/MgO/Fe and Fe/MgO/Co systems with magnetic Fe nanoclusters embedded in the MgO spacer. Samples are grown by molecular beam epitaxy (MBE) and utilize wedged MgO films to independently vary the film thickness and the position of the Fe nanoclusters. Depending on the position of the Fe nanoclusters, the bilinear coupling (J1) exhibits strong variations in magnitude and can even switch between antiferromagnetic and ferromagnetic. This effect is explained by the magnetic coupling between the ferromagnetic films and the magnetic nanoclusters. Interestingly, the coupling of Fe nanoclusters to a Co film is 160% stronger than their coupling to a Fe film (at MgO spacing of 0.56 nm). This is much greater than the coupling difference of 20% observed in the analogous thin film systems (i.e. Fe/MgO/Co vs. Fe/MgO/Fe), identifying an interesting nano-scaling effect related to the coupling between films and nanoclusters.

0 citations0 reviewsNo code linkedOpen access
preprint2010arXiv

The Effect of Cluster Formation on Graphene Mobility

We investigate the effect of gold (Au) atoms in the form of both point-like charged impurities and clusters on the transport properties of graphene. Cryogenic deposition (18 K) of Au decreases the mobility and shifts the Dirac point in a manner that is consistent with scattering from point-like charged impurities. Increasing the temperature to room temperature promotes the formation of clusters, which is verified with atomic force microscopy. We find that for a fixed amount of Au impurities, the formation of clusters enhances the mobility and causes the Dirac point to shift back towards zero.

0 citations0 reviewsNo code linkedOpen access
preprint2010arXiv

Tunneling Spin Injection into Single Layer Graphene

We achieve tunneling spin injection from Co into single layer graphene (SLG) using TiO2 seeded MgO barriers. A non-local magnetoresistance (ΔRNL) of 130 Ω is observed at room temperature, which is the largest value observed in any material. Investigating ΔRNL vs. SLG conductivity from the transparent to the tunneling contact regimes demonstrates the contrasting behaviors predicted by the drift-diffusion theory of spin transport. Furthermore, tunnel barriers reduce the contact-induced spin relaxation and are therefore important for future investigations of spin relaxation in graphene.

0 citations0 reviewsNo code linkedOpen access
preprint2010arXiv

Tunneling Spin Injection into Single Layer Graphene (Supplementary Information)

We achieve tunneling spin injection from Co into single layer graphene (SLG) using TiO2 seeded MgO barriers. A non-local magnetoresistance (ΔRNL) of 130 Ω is observed at room temperature, which is the largest value observed in any material. Investigating ΔRNL vs. SLG conductivity from the transparent to the tunneling contact regimes demonstrates the contrasting behaviors predicted by the drift-diffusion theory of spin transport. Furthermore, tunnel barriers reduce the contact-induced spin relaxation and are therefore important for future investigations of spin relaxation in graphene.

0 citations0 reviewsNo code linkedOpen access
preprint2009arXiv

Electrical Detection of Spin Precession in Single Layer Graphene Spin Valves with Transparent Contacts

Spin accumulation and spin precession in single-layer graphene are studied by non-local spin valve measurements at room temperature. The dependence of the non-local magnetoresistance on electrode spacing is investigated and the results indicate a spin diffusion length of ~1.6 microns and a spin injection/detection efficiency of 0.013. Electrical detection of the spin precession confirms that the non-local signal originates from spin injection and transport. Fitting of the Hanle spin precession data yields a spin relaxation time of ~84 ps and a spin diffusion length of ~1.5 microns, which is consistent with the value obtained through the spacing dependence.

0 citations0 reviewsNo code linkedOpen access
preprint2009arXiv

Electron-Hole Asymmetry of Spin Injection and Transport in Single-Layer Graphene

Spin-dependent properties of single-layer graphene (SLG) have been studied by non-local spin valve measurements at room temperature. Gate voltage dependence shows that the non-local magnetoresistance (MR) is proportional to the conductivity of the SLG, which is the predicted behavior for transparent ferromagnetic/nonmagnetic contacts. While the electron and hole bands in SLG are symmetric, gate voltage and bias dependence of the non-local MR reveal an electron-hole asymmetry in which the non-local MR is roughly independent of bias for electrons, but varies significantly with bias for holes.

0 citations0 reviewsNo code linkedOpen access
preprint2009arXiv

Electronic Doping and Scattering by Transition Metals on Graphene

We investigate the effects of transition metals (TM) on the electronic doping and scattering in graphene using molecular beam epitaxy combined with in situ transport measurements. The room temperature deposition of TM onto graphene produces clusters that dope n-type for all TM investigated (Ti, Fe, Pt). We also find that the scattering by TM clusters exhibits different behavior compared to 1/r Coulomb scattering. At high coverage, Pt films are able to produce doping that is either n-type or weakly p-type, which provides experimental evidence for a strong interfacial dipole favoring n-type doping as predicted theoretically.

0 citations0 reviewsNo code linkedOpen access