Researcher profile

K. M. McCreary

K. M. McCreary contributes to research discovery and scholarly infrastructure.

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Published work

8 published item(s)

preprint2022arXiv

Magneto-Optical Measurements of the Negatively Charged 2$s$ Exciton in WSe$_2$

Monolayer transition metal dichalcogenides host a variety of optically excited quasiparticles species that stem from two-dimensional confinement combined with relatively large carrier effective masses and reduced dielectric screening. The magnetic response of these quasiparticles gives information on their spin and valley configurations, nuanced carrier interactions, and insight into the underlying band structure. Recently, there have been several reports of 2$s$/3$s$ charged excitons in TMDs, but very little is still known about their response to external magnetic fields. Using photoluminescence excitation spectroscopy, we observe the presence of the 2$s$ charged exciton and report for the first time its response to an applied magnetic field. We benchmark this response against the neutral exciton and find that both the 2$s$ neutral and charged excitons exhibit similar behavior with g-factors of g$_{\rm{X_0^{2s}}}$=-5.20$\pm$0.11 and g$_{\rm{X_-^{2s}}}$=-4.98$\pm$0.11, respectively.

preprint2010arXiv

Manipulation of Spin Transport in Graphene by Surface Chemical Doping

The effects of surface chemical doping on spin transport in graphene are investigated by performing non-local measurements in ultrahigh vacuum while depositing gold adsorbates. We demonstrate manipulation of the gate-dependent non-local spin signal as a function of gold coverage. We discover that charged impurity scattering is not the dominant mechanism for spin relaxation in graphene, despite its importance for momentum scattering. Finally, unexpected enhancements of the spin lifetime illustrate the complex nature of spin relaxation in graphene.

preprint2010arXiv

The Effect of Cluster Formation on Graphene Mobility

We investigate the effect of gold (Au) atoms in the form of both point-like charged impurities and clusters on the transport properties of graphene. Cryogenic deposition (18 K) of Au decreases the mobility and shifts the Dirac point in a manner that is consistent with scattering from point-like charged impurities. Increasing the temperature to room temperature promotes the formation of clusters, which is verified with atomic force microscopy. We find that for a fixed amount of Au impurities, the formation of clusters enhances the mobility and causes the Dirac point to shift back towards zero.

preprint2010arXiv

Tunneling Spin Injection into Single Layer Graphene

We achieve tunneling spin injection from Co into single layer graphene (SLG) using TiO2 seeded MgO barriers. A non-local magnetoresistance (ΔRNL) of 130 Ω is observed at room temperature, which is the largest value observed in any material. Investigating ΔRNL vs. SLG conductivity from the transparent to the tunneling contact regimes demonstrates the contrasting behaviors predicted by the drift-diffusion theory of spin transport. Furthermore, tunnel barriers reduce the contact-induced spin relaxation and are therefore important for future investigations of spin relaxation in graphene.

preprint2010arXiv

Tunneling Spin Injection into Single Layer Graphene (Supplementary Information)

We achieve tunneling spin injection from Co into single layer graphene (SLG) using TiO2 seeded MgO barriers. A non-local magnetoresistance (ΔRNL) of 130 Ω is observed at room temperature, which is the largest value observed in any material. Investigating ΔRNL vs. SLG conductivity from the transparent to the tunneling contact regimes demonstrates the contrasting behaviors predicted by the drift-diffusion theory of spin transport. Furthermore, tunnel barriers reduce the contact-induced spin relaxation and are therefore important for future investigations of spin relaxation in graphene.

preprint2009arXiv

Electrical Detection of Spin Precession in Single Layer Graphene Spin Valves with Transparent Contacts

Spin accumulation and spin precession in single-layer graphene are studied by non-local spin valve measurements at room temperature. The dependence of the non-local magnetoresistance on electrode spacing is investigated and the results indicate a spin diffusion length of ~1.6 microns and a spin injection/detection efficiency of 0.013. Electrical detection of the spin precession confirms that the non-local signal originates from spin injection and transport. Fitting of the Hanle spin precession data yields a spin relaxation time of ~84 ps and a spin diffusion length of ~1.5 microns, which is consistent with the value obtained through the spacing dependence.

preprint2009arXiv

Electron-Hole Asymmetry of Spin Injection and Transport in Single-Layer Graphene

Spin-dependent properties of single-layer graphene (SLG) have been studied by non-local spin valve measurements at room temperature. Gate voltage dependence shows that the non-local magnetoresistance (MR) is proportional to the conductivity of the SLG, which is the predicted behavior for transparent ferromagnetic/nonmagnetic contacts. While the electron and hole bands in SLG are symmetric, gate voltage and bias dependence of the non-local MR reveal an electron-hole asymmetry in which the non-local MR is roughly independent of bias for electrons, but varies significantly with bias for holes.

preprint2009arXiv

Electronic Doping and Scattering by Transition Metals on Graphene

We investigate the effects of transition metals (TM) on the electronic doping and scattering in graphene using molecular beam epitaxy combined with in situ transport measurements. The room temperature deposition of TM onto graphene produces clusters that dope n-type for all TM investigated (Ti, Fe, Pt). We also find that the scattering by TM clusters exhibits different behavior compared to 1/r Coulomb scattering. At high coverage, Pt films are able to produce doping that is either n-type or weakly p-type, which provides experimental evidence for a strong interfacial dipole favoring n-type doping as predicted theoretically.