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Researcher profile

R. Gaal

R. Gaal contributes to research discovery and scholarly infrastructure.

ResearcherAffiliation not importedOpen to collaborate
cond-mat.str-elcond-mat.mtrl-scicond-matcond-mat.supr-con

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Published work

5 published item(s)

preprint2013arXiv

L4Fe2As2Te1-xO4-yFy (L = Pr, Sm, Gd): a layered oxypnictide superconductor with Tc up to 45 K

The synthesis, structural and physical properties of iron lanthanide oxypnictide superconductors, L4Fe2As2Te1-xO4 (L = Pr, Sm, Gd), with transition temperature at ~ 25 K are reported. Single crystals have been grown at high pressure using cubic anvil technique. The crystal structure consists of layers of L2O2 tetrahedra separated by alternating layers of chains of Te and of Fe2As2 tetrahedra: -L2O2-Te-L2O2-Fe2As2-L2O2-Te-L2O2- (space group: I4/mmm, a ~ 4.0, c ~ 29.6 Å). Substitution of oxygen by fluorine increases the critical temperature, e.g. in Gd4Fe2As2Te1-xOyF4-y up to 45 K. Magnetic torque measurements reveal an anisotropy of the penetration depths of ~31.

0 citations0 reviewsNo code linkedOpen access
preprint2007arXiv

High-pressure infrared spectroscopy: tuning of the low-energy excitations in correlated electron systems

We have extended the range of the high-pressure optical spectroscopy to the far-infrared region keeping the accuracy of ambient-pressure experiments. The newly-developed method offers a powerful tool for the study of pressure-induced phase transitions and electronic-structural changes in correlated electron systems. The novel-type optical pressure cell, equipped with large free-aperture diamond window, allows the measurement of optical reflectivity down to $ω\approx20-30$ cm$^{-1}$ for hydrostatic pressures up to $p\approx26$ kbar. The efficiency of the technique is demonstrated by the investigation of the 2-dimensional charge-density-wave 1$T$-TaS$_2$ whose electronic structure shows high sensitivity to external pressure. The room-temperature semi-metallic phase of 1$T$-TaS$_2$ is effectively extended by application of pressure and stabilized as the ground state above $p=14$ kbar. The corresponding fully incoherent low-energy optical conductivity is almost temperature independent below T=300 K. For intermediate pressures, the onset of the low-temperature insulating phase is reflected by the sudden drop of the reflectivity and by the emergence of sharp phonon resonances.

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preprint2006arXiv

Separation of orbital contributions to the optical conductivity of BaVS$_3$

The correlation-driven metal-insulator transition (MIT) of BaVS$_3$ was studied by polarized infrared spectroscopy. In the metallic state two types of electrons coexist at the Fermi energy: The quasi 1D metallic transport of $A_{1g}$ electrons is superimposed on the isotropic hopping conduction of localized $E_g$ electrons. The "bad-metal" character and the weak anisotropy are the consequences of the large effective mass $m_{eff}\approx7m_e$ and scattering rate $Γ\geq160$ meV of the quasi-particles in the $A_{1g}$ band. There is a pseudo-gap above $T_{MI}=69$ K, and in the insulating phase the gap follows the BCS-like temperature dependence of the structural order parameter with $Δ_{ch}\approx42$ meV in the ground state. The MIT is described in terms of a weakly coupled two-band model.

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preprint2002arXiv

Phonon anomaly at the charge ordering transition in 1T-TaS2

The infrared reflectance of the transition metal chalcogenide 1T-TaS2 has been measured at temperatures from 30K to 360K over 30-45,000cm^-1 (4meV-5.5eV). The optical conductivity was obtained by Kramers-Kronig analysis. At 360K only modest traces of the phonon lines are noticeable. The phonon modes are followed by a pseudogap-like increase of the optical conductivity, with direct optical transitions observed at frequencies above 1eV. As the temperature decreases, the low frequency conductivity also decreases, phonon modes become more pronounced and pseudogap develops into a gap at 800cm^-1 (100meV). We observe an anomalous frequency dependence of the 208cm^-1 infrared-active phonon mode. This mode demonstrates softening as the temperature decreases below the 180K metal-to-insulator transition. The same mode demonstrates strong hysteresis of the frequency and linewidth changes, similar in its temperature behavior to the hysteresis in the dc-resistivity. We discuss a possible relation of the observed softening of the mode to the structural changes associated with the metal-to-insulator transition.

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preprint2002arXiv

Pressure dependence of the thermoelectric power of single-walled carbon nanotubes

We have measured the thermoelectric power (S) of high purity single-walled carbon nanotube mats as a function of temperature at various hydrostatic pressures up to 2.0 GPa. The thermoelectric power is positive, and it increases in a monotonic way with increasing temperature for all pressures. The low temperature (T < 40 K) linear thermoelectric power is pressure independent and is characteristic for metallic nanotubes. At higher temperatures it is enhanced and though S(T) is linear again above about 100 K it has a nonzero intercept. This enhancement is strongly pressure dependent and is related to the change of the phonon population with hydrostatic pressure.

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