Source author record

R. Danneau

R. Danneau appears in the imported research catalog. Authorship, coauthor and topic links are available while profile ownership is still unclaimed.

ResearcherUnclaimed source record

cond-mat.mes-hall cond-mat.mtrl-sci

Catalog footprint

What is connected

3works

2topics

4close collaborators

Actions

Connect this record

Open graph Browse works

Inspect adjacent papers, topics, institutions and collaborators without losing the researcher page.

Building this map preview

BZPEER is loading the nearby papers, people, topics and institutions for this page.

preprint2011arXiv

Graphene microwave transistors on sapphire substrates

We have developed metal-oxide graphene field-effect transistors (MOGFETs) on sapphire substrates working at microwave frequencies. For monolayers, we obtain a transit frequency up to ~ 80 GHz for a gate length of 200 nm, and a power gain maximum frequency of about ~ 3 GHz for this specific sample. Given the strongly reduced charge noise for nanostructures on sapphire, the high stability and high performance of this material at low temperature, our MOGFETs on sapphire are well suited for a cryogenic broadband low-noise amplifier.

preprint2011arXiv

Shot noise and conductivity at high bias in bilayer graphene: Signatures of electron-optical phonon coupling

We have studied electronic conductivity and shot noise of bilayer graphene (BLG) sheets at high bias voltages and low bath temperature $T_0=4.2$ K. As a function of bias, we find initially an increase of the differential conductivity, which we attribute to self-heating. At higher bias, the conductivity saturates and even decreases due to backscattering from optical phonons. The electron-phonon interactions are also responsible for the decay of the Fano factor at bias voltages $V>0.1$ V. The high bias electronic temperature has been calculated from shot noise measurements, and it goes up to $\sim1200$ K at $V=0.75$ V. Using the theoretical temperature dependence of BLG conductivity, we extract an effective electron-optical phonon scattering time $τ_{e-op}$. In a 230 nm long BLG sample of mobility $μ=3600$ cm$^2$V$^{-1}$s$^{-1}$, we find that $τ_{e-op}$ decreases with increasing voltage and is close to the charged impurity scattering time $τ_{imp}=60$ fs at $V=0.6$ V.

preprint2010arXiv

Shot Noise Suppression and Hopping Conduction in Graphene Nanoribbons

We have investigated shot noise and conduction of graphene field effect nanoribbon devices at low temperature. By analyzing the exponential $I-V$ characteristics of our devices in the transport gap region, we found out that transport follows variable range hopping laws at intermediate bias voltages $1 < V_{bias} < 12$ mV. In parallel, we observe a strong shot noise suppression leading to very low Fano factors. The strong suppression of shot noise is consistent with inelastic hopping, in crossover from one- to two-dimensional regime, indicating that the localization length $l_{loc} < W$ in our nanoribbons.