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A. C. Betz

A. C. Betz appears in the imported research catalog. Authorship, coauthor and topic links are available while profile ownership is still unclaimed.

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cond-mat.mes-hall

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Published work

10 published item(s)

preprint2016arXiv

Reconfigurable quadruple quantum dots in a silicon nanowire transistor

We present a novel reconfigurable metal-oxide-semiconductor multi-gate transistor that can host a quadruple quantum dot in silicon. The device consist of an industrial quadruple-gate silicon nanowire field-effect transistor. Exploiting the corner effect, we study the versatility of the structure in the single quantum dot and the serial double quantum dot regimes and extract the relevant capacitance parameters. We address the fabrication variability of the quadruple-gate approach which, paired with improved silicon fabrication techniques, makes the corner state quantum dot approach a promising candidate for a scalable quantum information architecture.

0 citations0 reviewsNo code linkedOpen access
preprint2015arXiv

Anisotropic magneto-capacitance in ferromagnetic-plate capacitors

The capacitance of a parallel plate capacitor can depend on applied magnetic field. Previous studies have identified capacitance changes induced via classical Lorentz force or spin-dependent Zeeman effects. Here we measure a magnetization direction dependent capacitance in parallel-plate capacitors where one plate is a ferromagnetic semiconductor, gallium manganese arsenide. This anisotropic magneto-capacitance is due to the anisotropy in the density of states dependent on the magnetization through the strong spin-orbit interaction.

0 citations0 reviewsNo code linkedOpen access
preprint2015arXiv

Charge dynamics and spin blockade in a hybrid double quantum dot in silicon

Electron spin qubits in silicon, whether in quantum dots or in donor atoms, have long been considered attractive qubits for the implementation of a quantum computer due to the semiconductor vacuum character of silicon and its compatibility with the microelectronics industry. While donor electron spins in silicon provide extremely long coherence times and access to the nuclear spin via the hyperfine interaction, quantum dots have the complementary advantages of fast electrical operations, tunability and scalability. Here we present an approach to a novel hybrid double quantum dot by coupling a donor to a lithographically patterned artificial atom. Using gate-based rf reflectometry, we probe the charge stability of this double quantum dot system and the variation of quantum capacitance at the interdot charge transition. Using microwave spectroscopy, we find a tunnel coupling of 2.7 GHz and characterise the charge dynamics, which reveals a charge T2* of 200 ps and a relaxation time T1 of 100 ns. Additionally, we demonstrate spin blockade at the inderdot transition, opening up the possibility to operate this coupled system as a singlet-triplet qubit or to transfer a coherent spin state between the quantum dot and the donor electron and nucleus.

0 citations0 reviewsNo code linkedOpen access
preprint2014arXiv

A high-sensitivity gate-based charge sensor in silicon

The implementation of a quantum computer requires a qubit-specific measurement capability to read-out the final state of a quantum system. The model of spin dependent tunneling followed by charge readout has been highly successful in enabling spin qubit experiments in all-electrical, semiconductor based quantum computing. As experiments grow more sophisticated, and head towards multiple qubit architectures that enable small scale computation, it becomes important to consider the charge read-out overhead. With this in mind, Reilly et al. demonstrated a gate readout scheme in a GaAs double quantum dot that removed the need for an external charge sensor. This readout, which achieved sensitivities of order me/$\sqrt(Hz)$, was enabled by using a resonant circuit to probe the complex radio-frequency polarisability of the double quantum dot. However, the ultimate performance of this technology and the noise sources that limit it remain to be determined. Here, we investigate a gate-based readout scheme using a radio-frequency resonant circuit strongly coupled to a double quantum at the corner states of a silicon nanowire transistor. We find a significantly improved charge sensitivity of 37 $μ$e/$\sqrt(Hz)$. By solving the dynamical master equation of the fast-driven electronic transitions we quantify the noise spectral density and determine the ultimate charge and phase sensitivity of gate-based read-out. We find comparable performance to conventional charge sensors and fundamental limits of order ne/$\sqrt(Hz)$ and $μ$rad/$\sqrt(Hz)$, with the gate-based sensor improving on standard detection for certain device parameters. Our results show that, especially in state-of-the-art silicon qubit architectures, charge detection by probing the complex polarisability has advantages in terms of reducing the readout overhead but also in terms of the absolute charge sensitivity.

0 citations0 reviewsNo code linkedOpen access
preprint2014arXiv

Ambipolar quantum dots in intrinsic silicon

We electrically measure intrinsic silicon quantum dots with electrostatically defined tunnel barriers. The presence of both p-type and n-type ohmic contacts enables the accumulation of either electrons or holes. Thus we are able to study both transport regimes within the same device. We investigate the effect of the tunnel barriers and the electrostatically defined quantum dots. There is greater localisation of charge states under the tunnel barriers in the case of hole conduction leading to higher charge noise in the p-regime.

0 citations0 reviewsNo code linkedOpen access
preprint2013arXiv

Thermionic charge transport in CMOS nano-transistors

We report on DC and microwave electrical transport measurements in silicon-on-insulator CMOS nano-transistors at low and room temperature. At low source-drain voltage, the DC current and RF response show signs of conductance quantization. We attribute this to Coulomb blockade resulting from barriers formed at the spacer-gate interfaces. We show that at high bias transport occurs thermionically over the highest barrier: Transconductance traces obtained from microwave scattering-parameter measurements at liquid helium and room temperature is accurately fitted by a thermionic model. From the fits we deduce the ratio of gate capacitance and quantum capacitance, as well as the electron temperature.

0 citations0 reviewsNo code linkedOpen access
preprint2012arXiv

Hot electron cooling by acoustic phonons in graphene

We have investigated the energy loss of hot electrons in metallic graphene by means of GHz noise thermometry at liquid helium temperature. We observe the electronic temperature T / V at low bias in agreement with the heat diffusion to the leads described by the Wiedemann-Franz law. We report on $T\propto\sqrt{V}$ behavior at high bias, which corresponds to a T4 dependence of the cooling power. This is the signature of a 2D acoustic phonon cooling mechanism. From a heat equation analysis of the two regimes we extract accurate values of the electron-acoustic phonon coupling constant $Σ$ in monolayer graphene. Our measurements point to an important effect of lattice disorder in the reduction of $Σ$, not yet considered by theory. Moreover, our study provides a strong and firm support to the rising field of graphene bolometric detectors.

0 citations0 reviewsNo code linkedOpen access
preprint2012arXiv

Supercollision cooling in undoped graphene

Carrier mobility in solids is generally limited by electron-impurity or electron-phonon scattering depending on the most frequently occurring event. Three body collisions between carriers and both phonons and impurities are rare; they are denoted supercollisions (SCs). Elusive in electronic transport they should emerge in relaxation processes as they allow for large energy transfers. As pointed out in Ref. \onlinecite{Song2012PRL}, this is the case in undoped graphene where the small Fermi surface drastically restricts the allowed phonon energy in ordinary collisions. Using electrical heating and sensitive noise thermometry we report on SC-cooling in diffusive monolayer graphene. At low carrier density and high phonon temperature the Joule power $P$ obeys a $P\propto T_e^3$ law as a function of electronic temperature $T_e$. It overrules the linear law expected for ordinary collisions which has recently been observed in resistivity measurements. The cubic law is characteristic of SCs and departs from the $T_e^4$ dependence recently reported for metallic graphene below the Bloch-Grüneisen temperature. These supercollisions are important for applications of graphene in bolometry and photo-detection.

0 citations0 reviewsNo code linkedOpen access
preprint2011arXiv

Graphene microwave transistors on sapphire substrates

We have developed metal-oxide graphene field-effect transistors (MOGFETs) on sapphire substrates working at microwave frequencies. For monolayers, we obtain a transit frequency up to ~ 80 GHz for a gate length of 200 nm, and a power gain maximum frequency of about ~ 3 GHz for this specific sample. Given the strongly reduced charge noise for nanostructures on sapphire, the high stability and high performance of this material at low temperature, our MOGFETs on sapphire are well suited for a cryogenic broadband low-noise amplifier.

0 citations0 reviewsNo code linkedOpen access
preprint2011arXiv

Transport scattering time probed through rf admittance of a graphene capacitor

We have investigated electron dynamics in top gated graphene by measuring the gate admittance of a diffusive graphene capacitor in a broad frequency range as a function of carrier density. The density of states, conductivity and diffusion constant are deduced from the low frequency gate capacitance, its charging time and their ratio. The admittance evolves from an RC-like to a skin-effect response at GHz frequency with a crossover given by the Thouless energy. The scattering time is found to be independent of energy in the 0 - 200 meV investigated range at room temperature. This is consistent with a random mass model for Dirac Fermions.

0 citations0 reviewsNo code linkedOpen access