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R. C. Ashoori

R. C. Ashoori contributes to research discovery and scholarly infrastructure.

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Published work

12 published item(s)

preprint2014arXiv

Torque magnetometry of an amorphous-alumina/strontium-titanate interface

We report torque magnetometry measurements of an oxide heterostructure consisting of an amorphous Al$_2$O$_3$ thin film grown on a crystalline SrTiO$_3$ substrate ($a$-AO/STO) by atomic layer deposition. We find a torque response that resembles previous studies of crystalline LaAlO$_3$/SrTiO$_3$ (LAO/STO) heterointerfaces, consistent with strongly anisotropic magnetic ordering in the plane of the interface. Unlike crystalline LAO, amorphous Al$_2$O$_3$ is nonpolar, indicating that planar magnetism at an oxide interface is possible without the strong internal electric fields generated within the polarization catastrophe model. We discuss our results in the context of current theoretical efforts to explain magnetism in crystalline LAO/STO.

preprint2013arXiv

Massive Dirac fermions and Hofstadter butterfly in a van der Waals heterostructure

Van der Waals heterostructures comprise a new class of artificial materials formed by stacking atomically-thin planar crystals. Here, we demonstrate band structure engineering of a van der Waals heterostructure composed of a monolayer graphene flake coupled to a rotationally-aligned hexagonal boron nitride substrate. The spatially-varying interlayer atomic registry results both in a local breaking of the carbon sublattice symmetry and a long-range moiré superlattice potential in the graphene. This interplay between short- and long-wavelength effects results in a band structure described by isolated superlattice minibands and an unexpectedly large band gap at charge neutrality, both of which can be tuned by varying the interlayer alignment. Magnetocapacitance measurements reveal previously unobserved fractional quantum Hall states reflecting the massive Dirac dispersion that results from broken sublattice symmetry. At ultra-high fields, integer conductance plateaus are observed at non-integer filling factors due to the emergence of the Hofstadter butterfly in a symmetry-broken Landau level.

preprint2013arXiv

Tunable symmetry breaking and helical edge transport in a graphene quantum spin Hall state

Low-dimensional electronic systems have traditionally been obtained by electrostatically confining electrons, either in heterostructures or in intrinsically nanoscale materials such as single molecules, nanowires, and graphene. Recently, a new paradigm has emerged with the advent of symmetry-protected surface states on the boundary of topological insulators, enabling the creation of electronic systems with novel properties. For example, time reversal symmetry (TRS) endows the massless charge carriers on the surface of a three-dimensional topological insulator with helicity, locking the orientation of their spin relative to their momentum. Weakly breaking this symmetry generates a gap on the surface, resulting in charge carriers with finite effective mass and exotic spin textures. Analogous manipulations of the one-dimensional boundary states of a two-dimensional topological insulator are also possible, but have yet to be observed in the leading candidate materials. Here, we demonstrate experimentally that charge neutral monolayer graphene displays a new type of quantum spin Hall (QSH) effect, previously thought to exist only in TRS topological insulators, when it is subjected to a very large magnetic field angled with respect to the graphene plane. Unlike in the TRS case, the QSH presented here is protected by a spin-rotation symmetry that emerges as electron spins in a half-filled Landau level are polarized by the large in-plane magnetic field. The properties of the resulting helical edge states can be modulated by balancing the applied field against an intrinsic antiferromagnetic instability, which tends to spontaneously break the spin-rotation symmetry. In the resulting canted antiferromagnetic (CAF) state, we observe transport signatures of gapped edge states, which constitute a new kind of one-dimensional electronic system with tunable band gap and associated spin-texture.

preprint2011arXiv

Coexistence of Magnetic Order and Two-dimensional Superconductivity at LaAlO$_3$/SrTiO$_3$ Interfaces

A two dimensional electronic system with novel electronic properties forms at the interface between the insulators LaAlO$_3$ and SrTiO$_3$. Samples fabricated until now have been found to be either magnetic or superconducting, depending on growth conditions. We combine transport measurements with high-resolution magnetic torque magnetometry and report here evidence of magnetic ordering of the two-dimensional electron liquid at the interface. The magnetic ordering exists from well below the superconducting transition to up to 200 K, and is characterized by an in-plane magnetic moment. Our results suggest that there is either phase separation or coexistence between magnetic and superconducting states. The coexistence scenario would point to an unconventional superconducting phase in the ground state.

preprint2010arXiv

Anomalous structure in the single particle spectrum of the fractional quantum Hall effect

The two-dimensional electron system (2DES) is a unique laboratory for the physics of interacting particles. Application of a large magnetic field produces massively degenerate quantum levels known as Landau levels. Within a Landau level the kinetic energy of the electrons is suppressed, and electron-electron interactions set the only energy scale. Coulomb interactions break the degeneracy of the Landau levels and can cause the electrons to order into complex ground states. In the high energy single particle spectrum of this system, we observe salient and unexpected structure that extends across a wide range of Landau level filling fractions. The structure appears only when the 2DES is cooled to very low temperature, indicating that it arises from delicate ground state correlations. We characterize this structure by its evolution with changing electron density and applied magnetic field. We present two possible models for understanding these observations. Some of the energies of the features agree qualitatively with what might be expected for composite Fermions, which have proven effective for interpreting other experiments in this regime. At the same time, a simple model with electrons localized on ordered lattice sites also generates structure similar to those observed in the experiment. Neither of these models alone is sufficient to explain the observations across the entire range of densities measured. The discovery of this unexpected prominent structure in the single particle spectrum of an otherwise thoroughly studied system suggests that there exist core features of the 2DES that have yet to be understood.

preprint2010arXiv

Large capacitance enhancement and negative compressibility of two-dimensional electronic systems at LaAlO$_3$/SrTiO$_3$ interfaces

Novel electronic systems forming at oxide interfaces comprise a class of new materials with a wide array of potential applications. A high mobility electron system forms at the LaAlO$_3$/SrTiO$_3$ interface and, strikingly, both superconducts and displays indications of hysteretic magnetoresistance. An essential step for device applications is establishing the ability to vary the electronic conductivity of the electron system by means of a gate. We have fabricated metallic top gates above a conductive interface to vary the electron density at the interface. By monitoring capacitance and electric field penetration, we are able to tune the charge carrier density and establish that we can completely deplete the metallic interface with small voltages. Moreover, at low carrier densities, the capacitance is significantly enhanced beyond the geometric capacitance for the structure. In the same low density region, the metallic interface overscreens an external electric field. We attribute these observations to a negative compressibility of the electronic system at the interface. Similar phenomena have been observed previously in semiconducting two-dimensional electronic systems. The observed compressibility result is consistent with the interface containing a system of mobile electrons in two dimensions.

preprint2010arXiv

Observations of Plasmarons in a System of Massive Electrons

Calculations of the single particle density of states (SPDOS) of electron liquids have long predicted that there exist two distinct charged excitations: the usual quasiparticle consisting of an electron or hole screened by a correlation hole, and a "plasmaron" consisting of a hole resonantly bound to real plasmons in the Fermi sea(1,2). Using tunneling spectroscopy to measure the SPDOS of a two-dimensional electronic system, we demonstrate the first detection of the plasmaron in a system in which electrons have mass. We monitor the evolution of the plasmaron with applied magnetic field and discover unpredicted "magnetoplasmarons" which appear in spectra as negative index Landau levels. These sharp features corresponding to long-lived quasiparticles appear at high energies where SPDOS structure is ordinarily broadened by electron-electron interactions.

preprint2001arXiv

Direct observation of the charging of a 2D electron gas through an incompressible strip in the quantum Hall regime

Using charge accumulation imaging, we measure the charge flow across an incompressible strip and follow its evolution with magnetic field. The strip runs parallel to the edge of a gate deposited on the sample and forms at positions where an exact number of integer Landau levels is filled. An RC model of charging fits the data well and enables us to determine the longitudinal resistance of the strip. Surprisingly, we find that the strip becomes more resistive as its width decreases.

preprint2000arXiv

Localization in Artificial Disorder - Two Coupled Quantum Dots

Using Single Electron Capacitance Spectroscopy, we study electron additions in quantum dots containing two potential minima separated by a shallow barrier. Analysis of addition spectra in magnetic field allows us to distinguish whether electrons are localized in either potential minimum or delocalized over the entire dot. We demonstrate that high magnetic field abruptly splits up a low-density droplet into two smaller fragments, each residing in a potential minimum. An unexplained cancellation of electron repulsion between electrons in these fragments gives rise to paired electron additions.

preprint1999arXiv

Imaging of Low Compressibility Strips in the Quantum Hall Liquid

Using Subsurface Charge Accumulation scanning microscopy we image strips of low compressibility corresponding to several integer Quantum Hall filling factors. We study in detail the strips at Landau level filling factors $ν=$ 2 and 4. The observed strips appear significantly wider than predicted by theory. We present a model accounting for the discrepancy by considering a disorder-induced nonzero density of states in the cyclotron gap.

preprint1999arXiv

The Localization-Delocalization Transition in Quantum Dots

Single-electron capacitance spectroscopy precisely measures the energies required to add individual electrons to a quantum dot. The spatial extent of electronic wavefunctions is probed by investigating the dependence of these energies on changes in the dot confining potential. For low electron densities, electrons occupy distinct spatial sites localized within the dot. At higher densities, the electrons become delocalized, and all wavefunctions are spread over the full dot area. Near the delocalization transition, the last remaining localized states exist at the perimeter of the dot. Unexpectedly, these electrons appear to bind with electrons in the dot center.

preprint1996arXiv

A New Class of Resonances at the Edge of the Two Dimensional Electron Gas

We measure the frequency dependent capacitance of a gate covering the edge and part of a two-dimensional electron gas in the quantum Hall regime. In applying a positive gate bias, we create a metallic puddle under the gate surrounded by an insulating region. Charging of the puddle occurs via electron tunneling from a metallic edge channel. Analysis of the data allows direct extraction of this tunneling conductance. Novel conductance resonances appear as a function of gate bias. Samples with gates ranging from 1-170~$μ$m along the edge display strikingly similar resonance spectra. The data suggest the existence of unexpected structure, homogeneous over long length scales, at the sample edge.