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R. Bachelet

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Published work

3 published item(s)

preprint2014arXiv

Laterally-confined two-dimensional electron gases in self-patterned LaAlO3/SrTiO3 interfaces

A bottom-up process has been used to engineer the LaAlO3/SrTiO3 interface atomic composition and locally confine the two-dimensional electron gas to lateral sizes in the order of 100 nm. This is achieved by using SrTiO3(001) substrate surfaces with self-patterned chemical termination, which is replicated by the LaAlO3 layer, resulting in a modulated LaO/TiO2 and AlO2/SrO interface composition. We demonstrate the confinement of the conducting interface forming either long-range ordered nanometric stripes or isolated regions. Our results demonstrate that engineering the interface chemical termination is a suitable strategy towards nanoscale lateral confinement of two-dimensional high-mobility systems.

preprint2013arXiv

X-ray interference effects on the determination of structural data in ultrathin La2/3Sr1/3MnO3 epitaxial thin films

We analyze X-ray diffraction data used to extract cell parameters of ultrathin films on closely matching substrates. We focus on epitaxial La2/3Sr1/3MnO3 films grown on (001) SrTiO3 single crystalline substrates. It will be shown that, due to extremely high structural similarity of film and substrate, data analysis must explicitly consider the distinct phase of the diffracted waves by substrate and films to extract reliable unit cell parameters. The implications of this finding for the understanding of strain effects in ultrathin films and interfaces will be underlined

preprint2011arXiv

Strain-driven non-collinear magnetic ordering in orthorhombic epitaxial YMnO3 thin films

We show that using epitaxial strain and chemical pressure in orthorhombic YMnO3 and Co-substituted (YMn0.95Co0.05O3) thin films, a ferromagnetic response can be gradually introduced and tuned. These results, together with the measured anisotropy of the magnetic response, indicate that the unexpected observation of ferromagnetism in orthorhombic o-RMnO3 (R= Y, Ho, Tb, etc) films originates from strain-driven breaking of the fully compensated magnetic ordering by pushing magnetic moments away from the antiferromagnetic [010] axis. We show that the resulting canting angle and the subsequent ferromagnetic response, gradually increase (up to ~ 1.2\degree) by compression of the unit cell. We will discuss the relevance of these findings, in connection to the magnetoelectric response of orthorhombic manganites.