Source author record

R. A. Barton

R. A. Barton appears in the imported research catalog. Authorship, coauthor and topic links are available while profile ownership is still unclaimed.

ResearcherUnclaimed source record

Catalog footprint

What is connected

3works
4topics
4close collaborators

Actions

Connect this record

Log in to claim

Research graph

See the researcher in context

Open full explorer

Inspect adjacent papers, topics, institutions and collaborators without losing the researcher page.

Building this map preview

BZPEER is loading the nearby papers, people, topics and institutions for this page.

Published work

3 published item(s)

preprint2013arXiv

Simultaneous Electrical and Optical Readout of Graphene-Coated High Q Silicon Nitride Resonators

We have fabricated and tested mechanical resonators consisting of a single-atomic-layer of graphene deposited on suspended silicon nitride membranes. With the addition of the graphene layer we retain the desirable mechanical properties of silicon nitride but utilize the electrical and optical properties of graphene to transduce resonant motion by both optical and electrical means. By positioning the graphene-on-silicon-nitride drums in a tunable optical cavity we observe position dependent damping and resonant frequency control of the devices due to optical absorption by graphene.

preprint2011arXiv

Terahertz imaging and spectroscopy of large-area single-layer graphene

We demonstrate terahertz (THz) imaging and spectroscopy of a 15x15-mm^2 single-layer graphene film on Si using broadband THz pulses. The THz images clearly map out the THz carrier dynamics of the graphene-on-Si sample, allowing us to measure sheet conductivity with sub-mm resolution without fabricating electrodes. The THz carrier dynamics are dominated by intraband transitions and the THz-induced electron motion is characterized by a flat spectral response. A theoretical analysis based on the Fresnel coefficients for a metallic thin film shows that the local sheet conductivity varies across the sample from σs = 1.7x10^-3 to 2.4x10^-3 Ω^-1 (sheet resistance, ρs = 420 - 590 Ω/sq).

preprint2010arXiv

High-Q Nanomechanics via Destructive Interference of Elastic Waves

Mechanical dissipation poses an ubiquitous challenge to the performance of nanomechanical devices. Here we analyze the support-induced dissipation of high-stress nanomechanical resonators. We develop a model for this loss mechanism and test it on silicon nitride membranes with circular and square geometries. The measured Q-values of different harmonics present a non-monotonic behavior which is successfully explained. For azimuthal harmonics of the circular geometry we predict that destructive interference of the radiated waves leads to an exponential suppression of the clamping loss in the harmonic index. Our model can also be applied to graphene drums under high tension.