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Researcher profile

Qun Zhang

Qun Zhang contributes to research discovery and scholarly infrastructure.

ResearcherAffiliation not importedOpen to collaborate
physics.chem-phcond-mat.mtrl-scigr-qcphysics.app-phquant-ph

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Published work

5 published item(s)

preprint2021arXiv

Sparse Reconstruction for Radar Imaging based on Quantum Algorithms

The sparse-driven radar imaging can obtain the high-resolution images about target scene with the down-sampled data. However, the huge computational complexity of the classical sparse recovery method for the particular situation seriously affects the practicality of the sparse imaging technology. In this paper, this is the first time the quantum algorithms are applied to the image recovery for the radar sparse imaging. Firstly, the radar sparse imaging problem is analyzed and the calculation problem to be solved by quantum algorithms is determined. Then, the corresponding quantum circuit and its parameters are designed to ensure extremely low computational complexity, and the quantum-enhanced reconstruction algorithm for sparse imaging is proposed. Finally, the computational complexity of the proposed method is analyzed, and the simulation experiments with the raw radar data are illustrated to verify the validity of the proposed method.

0 citations0 reviewsNo code linkedOpen access
preprint2019arXiv

High-throughput fabrication and semi-automated characterization of oxide thin film transistors

High throughput experimental methods are known to accelerate the rate of research, development, and deployment of electronic materials. For example, thin films with lateral gradients in composition, thickness, or other parameters have been used alongside spatially-resolved characterization to assess how various physical factors affect material properties under varying measurement conditions. Similarly, multi-layer electronic devices that contain such graded thin films as one or more of their layers can also be characterized spatially in order to optimize the performance. In this work, we apply these high throughput experimental methods to thin film transistors (TFTs), demonstrating combinatorial device fabrication and semi-automated characterization using sputtered Indium-Gallium-Zinc-Oxide (IGZO) TFTs as a case study. We show that both extrinsic and intrinsic types of device gradients can be generated in a TFT library, such as channel thickness and length, channel cation compositions, and oxygen atmosphere during deposition. We also present a semi-automated method to measure the 44 devices fabricated on a 50x50mm substrate that can help to identify properly functioning TFTs in the library and finish the measurement in a short time. Finally, we propose a fully automated characterization system for similar TFT libraries, which can be coupled with high throughput data analysis. These results demonstrate that high throughput methods can accelerate the investigation of TFTs and other electronic devices.

0 citations0 reviewsNo code linkedOpen access
preprint2012arXiv

Gravitating tensor monopole in a Lorentz-violating field theory

We present a solution of the coupled Einstein and rank-two antisymmetric tensor field equations where Lorentz symmetry is spontaneously broken, and we discuss its observational signatures. Especially, the deflection angles have important qualitative differences between tensor and scalar monopoles. If a monopole were to be detected, it would be discriminated whether or not to correspond to a tensor one. This phenomenon might open up new direction in the search of Lorentz violation with future astrophysical observations.

0 citations0 reviewsNo code linkedOpen access
preprint2010arXiv

Spectroscopy of nickel monosulfide in 450 - 560 nm by laser-induced fluorescence and dispersed fluorescence techniques

Laser-induced fluorescence excitation spectrum of NiS in the wavelength range of 450 - 560 nm has been recorded and analyzed. Thirty-five vibronic transition bands have been observed, 29 of which are reported for the first time. Rotational analyses indicated that all the observed bands can be attributable to the [Omega = 0] - X^3 Sigma^- transitions of ^58 NiS (and ^60 NiS). Twenty-five bands have been suggested to be grouped into four vibrational progressions. Furthermore, through dispersed fluorescence measurements we directly obtained the energies for the ground-state vibrational levels up to v" = 6 as well as the vibrational frequency and the anharmonicity constant for the ground state of ^58 NiS.

0 citations0 reviewsNo code linkedOpen access
preprint2010arXiv

The B-X and C-X band systems of CuCl revisited: A laser-induced fluorescence study in 465-490 nm

We have reinvestigated the B-X and C-X band systems of CuCl by recording the laser-induced fluorescence excitation spectra in 20400-21800 cm^{-1}. The rotational analyses in Hund's case (a) revealed unambiguously a singlet-to-singlet transition nature. The measured lifetimes of a few microseconds seem too long for singlets and too short for triplets, which we think is actually in favor of a picture of singlet ({1}^Pi and {1}^Sigma^{+})-triplet ({3}^Pi_{0,1,2}) mixed states in the B and C band systems of CuCl. The two excited states we observed in our spectra may be the singlets that have been strongly "contaminated" by their triplet neighbors.

0 citations0 reviewsNo code linkedOpen access