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Quentin Wilmart

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2 published item(s)

preprint2026arXiv

High-Speed Non-Volatile Barium Titanate Field Programmable Photonic Gate Array

Programmable integrated photonics aims to replicate the versatility of field-programmable gate arrays in the optical domain. However, scaling these systems has been prevented by the high power consumption and thermal crosstalk of conventional volatile phase shifters. Here, we demonstrate the first non-volatile field-programmable photonic gate array, implemented on a hybrid silicon-barium titanate platform. Unlike traditional thermo-optic devices that require constant power to maintain a state, our device utilizes ferroelectric domain switching to provide non-volatile memory, allowing optical circuits to be programmed and retained without any holding power or electrical bias. The hexagonal waveguide mesh integrates 58 programmable unit cells and 116 actuators, achieving nanosecond-scale switching speeds of 80 nanoseconds while reducing static power consumption to negligible levels (560 nanowatts per π phase shift). To validate this platform, we configured the mesh to perform diverse signal processing functions, including tunable filtering, 4x4 linear unitary transformations, and optical routing. This work establishes non-volatile ferroelectric silicon photonics as a scalable, heat-free platform essential for the next generation of energy-efficient photonic computing.

preprint2014arXiv

Klein-tunneling transistor with ballistic graphene

Today the availability of high mobility graphene up to room temperature makes ballistic transport in nanodevices achievable. In particular, p-n-p transistor in the ballistic regime gives access to the Klein tunneling physics and allows the realization of devices exploiting the optics-like behavior of Dirac Fermions (DF) as in the Vesalego lens or the Fabry Pérot cavity. Here we propose a Klein tunneling transistor based on geometrical optics of DF. We consider the case of a prismatic active region delimited by a triangular gate, where total internal reflection may occur, which leads to the tunable suppression of the transistor transmission. We calculate the transmission and the current by means of scattering theory and the finite bias properties using Non Equilibrium Green's Function(NEGF) simulation.