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Qingze Wang

Qingze Wang appears in the imported research catalog. Authorship, coauthor and topic links are available while profile ownership is still unclaimed.

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Published work

3 published item(s)

preprint2014arXiv

Spin Texture and Mirror Chern number in Hg-Based Chalcogenides

The unique feature of surface states in topological insulators is the so-called "spin-momentum locking", which means that electron spin is oriented along a fixed direction for a given momentum and forms a texture in the momentum space. In this work, we study spin textures of two typical topological insulators in Hg-Based Chalcogenides, namely HgTe and HgS, based on both the first principles calculation and the eight band Kane model. We find opposite helicities of spin textures between these two materials, originating from the opposite signs of spin-orbit couplings. Furthermore, we reveal that different mirror Chern numbers between HgTe and HgS characterize different topological natures of the systems with opposite spin textures and guarantee the existence of gapless interface states.

preprint2013arXiv

Hierarchical structure formation in layered superconducting systems with multi-scale inter-vortex interactions

We demonstrate formation of hierarchical structures in two-dimensional systems with multiple length scales in the inter-particle interaction. These include states such as clusters of clusters, concentric rings, clusters inside a ring, and stripes in a cluster. We propose to realize such systems in vortex matter (where a vortex is mapped onto a particle with multi-scale interactions) in layered superconducting systems with varying inter-layer thicknesses and different layer materials.

preprint2013arXiv

Quantum Anomalous Hall Effect in Magnetically Doped InAs/GaSb Quantum Wells

The quantum anomalous Hall effect has recently been observed experimentally in thin films of Cr doped (Bi,Sb)$_2$Te$_3$ at a low temperature ($\sim$ 30mK). In this work, we propose realizing the quantum anomalous Hall effect in more conventional diluted magnetic semiconductors with doped InAs/GaSb type II quantum wells. Based on a four band model, we find an enhancement of the Curie temperature of ferromagnetism due to band edge singularities in the inverted regime of InAs/GaSb quantum wells. Below the Curie temperature, the quantum anomalous Hall effect is confirmed by the direct calculation of Hall conductance. The parameter regime for the quantum anomalous Hall phase is identified based on the eight-band Kane model. The high sample quality and strong exchange coupling make magnetically doped InAs/GaSb quantum wells good candidates for realizing the quantum anomalous Hall insulator at a high temperature.