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Qing'an Li

Qing'an Li appears in the imported research catalog. Authorship, coauthor and topic links are available while profile ownership is still unclaimed.

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Published work

3 published item(s)

preprint2013arXiv

Antiferromagnetic Domain Structure in Bilayer Manganite

We report a novel soft x-ray nanodiffraction study of antiferromagnetic domains in the strongly correlated bylayer manganite La$_{0.96}$Sr$_{2.04}$Mn$_{2}$O$_{7}$. We find that the antiferromagnetic domains are quenched, forming a unique domain pattern with each domain having an intrinsic memory of its spin direction, and with associated domain walls running along crystallographic directions. This can be explained by the presence of crystallographic or magnetic imperfections locked in during the crystal growth process which pin the antiferromagnetic domains. The antiferromagnetic domain pattern shows two distinct types of domain. We observe, in one type only, a periodic ripple in the manganese spin direction with a period of approximately 4 \micro\meter. We propose that the loss of inversion symmetry within a bilayer is responsible for this ripple structure through a Dzyaloshinskii-Moriya-type interaction.

preprint2013arXiv

The chiral phase transition in charge ordered 1T-TiSe2

It was recently discovered that the low temperature, charge ordered phase of 1T-TiSe2 has a chiral character. This unexpected chirality in a system described by a scalar order parameter could be explained in a model where the emergence of relative phase shifts between three charge density wave components breaks the inversion symmetry of the lattice. Here, we present experimental evidence for the sequence of phase transitions predicted by that theory, going from disorder to non-chiral and finally to chiral charge order. Employing X-ray diffraction, specific heat, and electrical transport measurements, we find that a novel phase transition occurs ~7 K below the main charge ordering transition in TiSe2, in agreement with the predicted hierarchy of charge ordered phases.

preprint2010arXiv

A Heuristic Algorithm for optimizing Page Selection Instructions

Page switching is a technique that increases the memory in microcontrollers without extending the address buses. This technique is widely used in the design of 8-bit MCUs. In this paper, we present an algorithm to reduce the overhead of page switching. To pursue small code size, we place the emphasis on the allocation of functions into suitable pages with a heuristic algorithm, thereby the cost-effective placement of page selection instructions. Our experimental results showed the optimization achieved a reduction in code size of 13.2 percent.