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Researcher profile

Qiangsheng Lu

Qiangsheng Lu contributes to research discovery and scholarly infrastructure.

ResearcherAffiliation not importedOpen to collaborate
cond-mat.mes-hallcond-mat.mtrl-scicond-mat.str-el

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Published work

4 published item(s)

preprint2022arXiv

Moiré Modulated Lattice Strain and Thickness-Dependent Lattice Expansion in Epitaxial Ultrathin Films of PdTe$_2$

We report the epitaxial growth of PdTe$_2$ ultrathin films on topological insulator Bi$_2$Se$_3$. A prominent Moiré pattern was observed in STM measurements. The Moiré periodicity increases as film thickness decreases, indicating a lattice expansion of epitaxial PdTe$_2$ thin films with lower thicknesses. In addition, our simulations based on Moiré Metrology reveal uniaxial lattice strains at the edge of PdTe$_2$ domains, and anisotropic strain distributions throughout the Moiré supercell with a net change in lattice strain up to ~2.9%. Our DFT calculations show that this strain effect leads to a narrowing of the band gap at $Γ$ point near the Fermi level. Under a strain of ~2.8%, the band gap at $Γ$ closes completely. Further increasing the lattice strain makes the band gap reopen and the order of conduction band and valence bands inverted in energy. The results offer a proof of concept for constructing quantum grids of topological materials under the modulation of Moiré potentials.

0 citations0 reviewsNo code linkedOpen access
preprint2021arXiv

Dirac Fermion Cloning, Moir$\bf{é}$ Flat Bands and Magic Lattice Constants in Epitaxial Monolayer Graphene

Tuning interactions between Dirac states in graphene has attracted enormous interest because it can modify the electronic spectrum of the two-dimensional material, enhance electron correlations, and give rise to novel condensed-matter phases such as superconductors, Mott insulators, Wigner crystals and quantum anomalous Hall insulators. Previous works predominantly focus on the flat band dispersion of coupled Dirac states from different graphene layers. In this work, we propose a new route to realizing flat band physics in monolayer graphene under a periodic modulation from substrates. We take gaphene/SiC heterostructure as a role model and demonstrate experimentally the substrate modulation leads to Dirac fermion cloning and consequently, the proximity of the two Dirac cones of monolayer graphene in momentum space. Our theoretical modeling captures the cloning mechanism of Dirac states and indicates that flat bands can emerge at certain magic lattice constants of substrate when the period of modulation becomes nearly commensurate with the $(\sqrt{3}\times\sqrt{3})R30^{\circ}$ supercell of graphene. The results show that the epitaxial monolayer graphene is a promising platform for exploring exotic many-body quantum phases arising from interactions between Dirac electrons.

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preprint2021arXiv

Giant Topological Hall Effect in van der Waals Heterostructures of CrTe2/Bi2Te3

Discoveries of interfacial topological Hall effect (THE) provide an ideal platform for exploring physics arising from the interplay between topology and magnetism. The interfacial topological Hall effect is closely related to the Dzyaloshinskii-Moriya interaction (DMI) at interface and topological spin textures. However, it is difficult to achieve a sizable THE in heterostructures due to the stringent constraints on the constituents of THE heterostructures such as strong spin-orbit coupling (SOC). Here we report the observation of a giant THE signal of 1.39 $μΩ\cdot$cm in the van der Waals heterostructures of CrTe2/Bi2Te3 fabricated by molecular beam epitaxy, a prototype of two-dimensional (2D) ferromagnet (FM)/topological insulator (TI). This large magnitude of THE is attributed to an optimized combination of 2D ferromagnetism in CrTe2, strong SOC in Bi2Te3, and an atomically sharp interface. Our work reveals CrTe2/Bi2Te3 as a convenient platform for achieving large interfacial THE in hybrid systems, which could be utilized to develop quantum science and high-density information storage.

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preprint2019arXiv

Electronic and magnetic properties of perovskite selenite and tellurite compounds: CoSeO$_3$, NiSeO$_3$, CoTeO$_3$ and NiTeO$_3$

Selenium and tellurium are among the few elements that form $AB$O$_3$ perovskite structures with a four valent ion in the $A$ site. This leads to highly distorted structures and unusual magnetic behavior. Here we investigate the Co and Ni selenite and tellurite compounds, CoSeO$_3$, CoTeO$_3$, NiSeO$_3$ and NiTeO$_3$ using first principles calculations. We find an interplay of crystal field and Jahn-Teller distortions that underpin the electronic and magnetic properties. While all compounds are predicted to show an insulating G-type antiferromagnetic ground state, there is a considerable difference in the anisotropy of the exchange interactions between the Ni and Co compounds. This is related to the Jahn-Teller distortion. Finally, we observe that these four compounds show characteristics generally associated with Mott insulators, even when described at the level of standard density functional theory. These are then dense bulk band or Slater, Mott-type insulators.

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