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Qianfan Zhang

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Published work

5 published item(s)

preprint2019arXiv

Modulating Super-Exchange Strength to Achieve Robust Ferromagnetic Couplings in Two-Dimensional Semiconductors

Low-dimensional semiconducting ferromagnets have attracted considerable attention due to their promising applications as nano-size spintronics. However, realizing robust ferromagnetic couplings that can survive at high temperature is restrained by two decisive factors: super-exchange couplings and anisotropy. Despite widely explored low-dimensional anisotropy, strengthening super-exchange couplings has rarely been investigated. Here, we found that ligands with lower electronegativity can strengthen ferromagnetic super-exchange couplings and further proposed the ligand modulation strategy to enhance the Curie temperature of low-dimensional ferromagnets. Based on the metallic CrX2 (X = S, Se, Te) family, substituting ligand atoms by halides can form stable semiconducting phase as CrSeCl, CrSeBr and CrTeBr. It is interesting to discover that, the nearest ferromagnetic super-exchange couplings can be strengthened when substituting ligands from S to Se and Te. Such evolution originates from the enhanced electron hopping integral and reduced energy intervals between d and p orbits. While the second nearest anti-ferromagnetic couplings are also benefitted due to delocalized p-p interactions. Finally, ligand modulation strategy is applied in other ferromagnetic monolayers, further verifying our theory and providing a fundamental understanding on controlling super-exchange couplings in low-dimension.

preprint2014arXiv

Nature of proton transport in a water-filled carbon nanotube and in liquid water

Proton transport (PT) in bulk liquid water and within a thin water-filled carbon nanotube has been examined with ab initio pathintegral molecular dynamics (PIMD). Barrierless proton transfer is observed in each case when quantum nuclear effects (QNEs) are accounted for. The key difference between the two systems is that in the nanotube facile PT is facilitated by a favorable prealignment of water molecules, whereas in bulk liquid water solvent reorganization is required prior to PT. Configurations where the quantum excess proton is delocalized over several adjacent water molecules along with continuous interconversion between different hydration states reveals that, as in liquid water, the hydrated proton under confinement is best described as a fluxional defect, rather than any individual idealized hydration state such as Zundel, Eigen, or the so-called linear H7O3+ complex along the water chain. These findings highlight the importance of QNEs in intermediate strength hydrogen bonds (HBs) and explain why H+ diffusion through nanochannels is impeded much less than other cations.

preprint2013arXiv

First-principles Approaches to Simulate Lithiation in Silicon Electrodes

Silicon is viewed as an excellent electrode material for lithium batteries due to its high lithium storage capacity. Various Si nano-structures, such as Si nanowires, have performed well as lithium battery anodes and have opened up exciting opportunities for the use of Si in energy storage devices. The mechanism of lithium insertion and the interaction between Li and the Si electrode must be understood at the atomic level; this understanding can be achieved by first-principles simulation. Here, first-principles computations of lithiation in silicon electrodes are reviewed. The review focuses on three aspects: the various properties of bulk Li-Si compounds with different Li concentrations, the electronic structure of Si nanowires and Li insertion behavior in Si nanowires, and the dynamic lithiation process at the Li/Si interface. Potential study directions in this research field and difficulties that the field still faces are discussed at the end.

preprint2012arXiv

Quantum simulation of low-temperature metallic liquid hydrogen

Experiments and computer simulations have shown that the melt-ing temperature of solid hydrogen drops with pressure above about 65 GPa, suggesting that a liquid state might exist at low temperatures. It has also been suggested that this low temperature liquid state might be non-molecular and metallic, although evidence for such behaviour is lacking. Here, we report results for hydrogen at high pressures using ab initio path-integral molecular dynamics methods, which include a description of the quantum motion of the protons at finite temperatures. We have determined the melting temperature as a function of pressure by direct simulation of the coexistence of the solid and liquid phases and have found an atomic solid phase from 500 to 800 GPa which melts at <200 K. Beyond this and up to pressures of 1200 GPa a metallic atomic liquid is stable at temperatures as low as 50 K. The quantum motion of the protons is critical to the low melting temperature in this system as ab initio simulations with classical nuclei lead to a considerably higher melting temperature of \sim300 K across the entire pressure range considered.

preprint2011arXiv

Ambipolar Field Effect in Topological Insulator Nanoplates of (BixSb1-x)2Te3

Topological insulators represent a new state of quantum matter attractive to both fundamental physics and technological applications such as spintronics and quantum information processing. In a topological insulator, the bulk energy gap is traversed by spin-momentum locked surface states forming an odd number of surface bands that possesses unique electronic properties. However, transport measurements have often been dominated by residual bulk carriers from crystal defects or environmental doping which mask the topological surface contribution. Here we demonstrate (BixSb1-x)2Te3 as a tunable topological insulator system to manipulate bulk conductivity by varying the Bi/Sb composition ratio. (BixSb1-x)2Te3 ternary compounds are confirmed as topological insulators for the entire composition range by angle resolved photoemission spectroscopy (ARPES) measurements and ab initio calculations. Additionally, we observe a clear ambipolar gating effect similar to that observed in graphene using nanoplates of (BixSb1-x)2Te3 in field-effect-transistor (FET) devices. The manipulation of carrier type and concentration in topological insulator nanostructures demonstrated in this study paves the way for implementation of topological insulators in nanoelectronics and spintronics.