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Source author record

Q. F. Zhan

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ResearcherUnclaimed source record
cond-mat.mtrl-scicond-mat.str-elcond-mat.mes-hallcond-mat.supr-con

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4 publications

preprint2022arXiv

Spin order and fluctuations in the EuAl4_4 and EuGa4_4 topological antiferromagnets: A μμSR study

We report on systematic muon-spin rotation and relaxation (μμSR) studies of the magnetic properties of EuAl4_4 and EuGa4_4 single crystals at a microscopic level. Transverse-field μμSR measurements, spanning a wide temperature range (from 1.5 to 50 K), show clear bulk AFM transitions, with an almost 100% magnetic volume fraction in both cases. Zero-field μμSR measurements, covering both the AFM and the paramagnetic (PM) states, reveal internal magnetic fields Bint(0)=0.33B_\mathrm{int}(0) = 0.33 T and 0.89 T in EuAl4_4 and EuGa4_4, respectively. The transverse muon-spin relaxation rate λTλ_\mathrm{T}, a measure of the internal field distribution at the muon-stopping site, shows a contrasting behavior. In EuGa4_4, it decreases with lowering the temperature, reaching its minimum at zero temperature, λT(0)=0.71λ_\mathrm{T}(0) = 0.71 μμs−1^{-1}. In EuAl4_4, it increases significantly below TNT_\mathrm{N}, to reach 58 μμs−1^{-1} at 1.5 K, most likely reflecting the complex magnetic structure and the competing interactions in the AFM state of EuAl4_4. In both compounds, the temperature-dependent longitudinal muon-spin relaxation λL(T)λ_\mathrm{L}(T), an indication of the rate of spin fluctuations, diverges near the onset of AFM order, followed by a significant drop at T<TNT < T_\mathrm{N}. In the AFM state, spin fluctuations are much stronger in EuAl4_4 than in EuGa4_4, while being comparable in the PM state. The evidence of robust spin fluctuations against the external magnetic fields provided by μμSR may offer new insights into the origin of the topological Hall effect and the possible magnetic skyrmions in the EuAl4_4 and EuGa4_4 compounds.

Open access
preprint2016arXiv

The effect of inserted NiO layer on spin-Hall magnetoresistance in Pt/NiO/YIG heterostructures

We investigate the spin-current transport through antiferromagnetic insulator (AFMI) by means of the spin-Hall magnetoressitance (SMR) over a wide temperature range in Pt/NiO/Y3_3Fe5_5O12_{12} (Pt/NiO/YIG) heterostructures. By inserting the AFMI NiO layer, the SMR dramatically decreases by decreasing the temperature down to the antiferromagnetically ordered state of NiO, which implies that the AFM order prevents rather than promotes the spin-current transport. On the other hand, the magnetic proximity effect (MPE) on induced Pt moments by YIG, which entangles with the spin-Hall effect (SHE) in Pt, can be efficiently screened, and pure SMR can be derived by insertion of NiO. The dual roles of the NiO insertion including efficiently blocking the MPE and transporting the spin current from Pt to YIG are outstanding compared with other antiferromagnetic (AFM) metal or nonmagnetic metal (NM).

Open access
preprint2015arXiv

Extraordinary Hall resistance and unconventional magnetoresistance in Pt/LaCoO3 hybrids

We report an investigation of transverse Hall resistance and longitudinal resistance on Pt thin films sputtered on epitaxial LaCoO3_3 (LCO) ferromagnetic insulator films. The LaCoO3_3 films were deposited on several single crystalline substrates [LaAlO3_3 (LAO), (La,Sr)(Al,Ta)O3_3 (LSAT), and SrTiO3_3 (STO)] with (001) orientation. The physical properties of LaCoO3_3 films were characterized by the measurements of magnetic and transport properties. The LaCoO3_3 films undergo a paramagnetic to ferromagnetic (FM) transition at Curie temperatures ranging from 40 K to 85 K, below which the Pt/LCO hybrids exhibit significant extraordinary Hall resistance (EHR) up to 50 mΩΩ and unconventional magnetoresistance (UCMR) ratio ΔΔρρ/ρ0ρ_0 about 1.2×10−41.2 \times 10^{-4}, accompanied by the conventional magnetoresistance (CMR). The observed spin transport properties share some common features as well as some unique characteristics when compared with well-studied Y3_3Fe5_5O12_{12}-based Pt thin films. Our findings call for new theories since the extraordinary Hall resistance and magnetoresistance cannot be consistently explained by the existing theories.

Open access
preprint2015arXiv

Pure spin-Hall magnetoresistance in Rh/Y3Fe5O12 hybrid

We report an investigation of anisotropic magnetoresistance (AMR) and anomalous Hall resistance (AHR) of Rh and Pt thin films sputtered on epitaxial Y3_3Fe5_5O12_{12} (YIG) ferromagnetic insulator films. For the Pt/YIG hybrid, large spin-Hall magnetoresistance (SMR) along with a sizable conventional anisotropic magnetoresistance (CAMR) and a nontrivial temperature dependence of AHR were observed in the temperature range of 5-300 K. In contrast, a reduced SMR with negligible CAMR and AHR was found in Rh/YIG hybrid. Since CAMR and AHR are characteristics for all ferromagnetic metals, our results suggest that the Pt is likely magnetized by YIG due to the magnetic proximity effect (MPE) while Rh remains free of MPE. Thus the Rh/YIG hybrid could be an ideal model system to explore physics and devices associated with pure spin current.

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