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Q. F. Zhan

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Published work

4 published item(s)

preprint2022arXiv

Spin order and fluctuations in the EuAl$_4$ and EuGa$_4$ topological antiferromagnets: A $μ$SR study

We report on systematic muon-spin rotation and relaxation ($μ$SR) studies of the magnetic properties of EuAl$_4$ and EuGa$_4$ single crystals at a microscopic level. Transverse-field $μ$SR measurements, spanning a wide temperature range (from 1.5 to 50 K), show clear bulk AFM transitions, with an almost 100% magnetic volume fraction in both cases. Zero-field $μ$SR measurements, covering both the AFM and the paramagnetic (PM) states, reveal internal magnetic fields $B_\mathrm{int}(0) = 0.33$ T and 0.89 T in EuAl$_4$ and EuGa$_4$, respectively. The transverse muon-spin relaxation rate $λ_\mathrm{T}$, a measure of the internal field distribution at the muon-stopping site, shows a contrasting behavior. In EuGa$_4$, it decreases with lowering the temperature, reaching its minimum at zero temperature, $λ_\mathrm{T}(0) = 0.71$ $μ$s$^{-1}$. In EuAl$_4$, it increases significantly below $T_\mathrm{N}$, to reach 58 $μ$s$^{-1}$ at 1.5 K, most likely reflecting the complex magnetic structure and the competing interactions in the AFM state of EuAl$_4$. In both compounds, the temperature-dependent longitudinal muon-spin relaxation $λ_\mathrm{L}(T)$, an indication of the rate of spin fluctuations, diverges near the onset of AFM order, followed by a significant drop at $T < T_\mathrm{N}$. In the AFM state, spin fluctuations are much stronger in EuAl$_4$ than in EuGa$_4$, while being comparable in the PM state. The evidence of robust spin fluctuations against the external magnetic fields provided by $μ$SR may offer new insights into the origin of the topological Hall effect and the possible magnetic skyrmions in the EuAl$_4$ and EuGa$_4$ compounds.

preprint2016arXiv

The effect of inserted NiO layer on spin-Hall magnetoresistance in Pt/NiO/YIG heterostructures

We investigate the spin-current transport through antiferromagnetic insulator (AFMI) by means of the spin-Hall magnetoressitance (SMR) over a wide temperature range in Pt/NiO/Y$_3$Fe$_5$O$_{12}$ (Pt/NiO/YIG) heterostructures. By inserting the AFMI NiO layer, the SMR dramatically decreases by decreasing the temperature down to the antiferromagnetically ordered state of NiO, which implies that the AFM order prevents rather than promotes the spin-current transport. On the other hand, the magnetic proximity effect (MPE) on induced Pt moments by YIG, which entangles with the spin-Hall effect (SHE) in Pt, can be efficiently screened, and pure SMR can be derived by insertion of NiO. The dual roles of the NiO insertion including efficiently blocking the MPE and transporting the spin current from Pt to YIG are outstanding compared with other antiferromagnetic (AFM) metal or nonmagnetic metal (NM).

preprint2015arXiv

Extraordinary Hall resistance and unconventional magnetoresistance in Pt/LaCoO3 hybrids

We report an investigation of transverse Hall resistance and longitudinal resistance on Pt thin films sputtered on epitaxial LaCoO$_3$ (LCO) ferromagnetic insulator films. The LaCoO$_3$ films were deposited on several single crystalline substrates [LaAlO$_3$ (LAO), (La,Sr)(Al,Ta)O$_3$ (LSAT), and SrTiO$_3$ (STO)] with (001) orientation. The physical properties of LaCoO$_3$ films were characterized by the measurements of magnetic and transport properties. The LaCoO$_3$ films undergo a paramagnetic to ferromagnetic (FM) transition at Curie temperatures ranging from 40 K to 85 K, below which the Pt/LCO hybrids exhibit significant extraordinary Hall resistance (EHR) up to 50 m$Ω$ and unconventional magnetoresistance (UCMR) ratio $Δ$$ρ$/$ρ_0$ about $1.2 \times 10^{-4}$, accompanied by the conventional magnetoresistance (CMR). The observed spin transport properties share some common features as well as some unique characteristics when compared with well-studied Y$_3$Fe$_5$O$_{12}$-based Pt thin films. Our findings call for new theories since the extraordinary Hall resistance and magnetoresistance cannot be consistently explained by the existing theories.

preprint2015arXiv

Pure spin-Hall magnetoresistance in Rh/Y3Fe5O12 hybrid

We report an investigation of anisotropic magnetoresistance (AMR) and anomalous Hall resistance (AHR) of Rh and Pt thin films sputtered on epitaxial Y$_3$Fe$_5$O$_{12}$ (YIG) ferromagnetic insulator films. For the Pt/YIG hybrid, large spin-Hall magnetoresistance (SMR) along with a sizable conventional anisotropic magnetoresistance (CAMR) and a nontrivial temperature dependence of AHR were observed in the temperature range of 5-300 K. In contrast, a reduced SMR with negligible CAMR and AHR was found in Rh/YIG hybrid. Since CAMR and AHR are characteristics for all ferromagnetic metals, our results suggest that the Pt is likely magnetized by YIG due to the magnetic proximity effect (MPE) while Rh remains free of MPE. Thus the Rh/YIG hybrid could be an ideal model system to explore physics and devices associated with pure spin current.