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Pingfan Chen

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cond-mat.mtrl-sci cond-mat.str-el

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preprint2014arXiv

Electric-Field-Modulated Nonvolatile Resistance Switching in VO2/PMN-PT(111) Heterostructures

The electric-field-modulated resistance switching in VO2 thin films grown on piezoelectric (111)-0.68Pb(Mg1/3Nb2/3)O3-0.32PbTiO3 (PMN-PT) substrates has been investigated. Large relative change in resistance (10.7%) was observed in VO2/PMN-PT(111) hererostructures at room temperature. For a substrate with a given polarization direction, stable resistive states of VO2 films can be realized even when the applied electric fields are removed from the heterostructures. By sweeping electric fields across the heterostructure appropriately, multiple resistive states can be achieved. These stable resistive states result from the different stable remnant strain states of substrate, which is related to the rearrangements of ferroelectric domain structures in PMN-PT(111) substrate. The resistance switching tuned by electric field in our work may have potential applications for novel electronic devices.

preprint2013arXiv

Effect of growth oxygen pressure on anisotropic-strain-induced phase separation in epitaxial La $_{0.67}$ Ca $_{0.33}$ MnO $_{3}$ /NdGaO $_{3}$ (001) films

The effect of deposition oxygen pressure (P $_{O}$ ) on phase separation (PS) induced in epitaxial La $_{0.67}$ Ca $_{0.33}$ MnO $_{3}$ /NdGaO $_{3}$ (001) films was investigated. Fully oxygenated films grown at high P $_{O}$ are anisotropically strained. They exhibit PS over a wide temperature range, because of the large orthorhombicity of NdGaO $_{3}$ substrates. The paramagnetic insulator-to-ferromagnetic metal (FM) and FM-to-antiferromagnetic insulator (AFI) transitions gradually shift to lower temperatures with decreasing PO. The AFI state is initially weakened (P $_{O}$ >= 30 Pa), but then becomes more robust against the magnetic field (P $_{O}$ < 30 Pa). The out-of-plane film lattice parameter increases with decreasing P $_{O}$ . For films grown at P $_{O}$ >= 30 Pa, the slight oxygen deficiency may enlarge the lattice unit cell, reduce the anisotropic strain and suppress the AFI state. Films deposited at P $_{O}$ < 30 Pa instead experience an average compressive strain. The enhanced compressive strain and structural defects in the films may lead to the robust AFI state. These results aid our understanding of PS in manganite films.

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Pingfan Chen

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2 publications

Electric-Field-Modulated Nonvolatile Resistance Switching in VO2/PMN-PT(111) Heterostructures

Effect of growth oxygen pressure on anisotropic-strain-induced phase separation in epitaxial La $_{0.67}$ Ca $_{0.33}$ MnO $_{3}$ /NdGaO $_{3}$ (001) films

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Pingfan Chen

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2 publications

Electric-Field-Modulated Nonvolatile Resistance Switching in VO2/PMN-PT(111) Heterostructures

Effect of growth oxygen pressure on anisotropic-strain-induced phase separation in epitaxial La0.67_{0.67}0.67​Ca0.33_{0.33}0.33​MnO3_{3}3​/NdGaO3_{3}3​(001) films

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Effect of growth oxygen pressure on anisotropic-strain-induced phase separation in epitaxial La $_{0.67}$ Ca $_{0.33}$ MnO $_{3}$ /NdGaO $_{3}$ (001) films