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Pierre-Yves Prodhomme

Pierre-Yves Prodhomme appears in the imported research catalog. Authorship, coauthor and topic links are available while profile ownership is still unclaimed.

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cond-mat.mtrl-sciphysics.chem-ph

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Published work

2 published item(s)

preprint2011arXiv

Ab initio calculation of Effective Work Functions for a TiN/HfO2/SiO2/Si transistor stack

Ab initio techniques are used to calculate the effective work function (Weff) of a TiN/HfO2/SiO2/Si stack representing a metal-oxide-semiconductor (MOS) transistor gate taking into account first order many body effects. The required band offsets were calculated at each interface varying its composition. Finally the transitivity of LDA calculated bulk band lineups were used and completed by MBPT bulk corrections for the terminating materials (Si and TiN) of the MOS stack. With these corrections the ab initio calculations predict a Weff of a TiN metal gate on HfO2 to be close to 5.0 eV.

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preprint2011arXiv

Free-energy profiles along reduction pathways of MoS2 M-edge and S-edge by dihydrogen: a first-principles study

We present the results of DFT calculations of free energy profiles along the reaction pathways starting from 50% coverage of MoS2 M-edge and 100% coverage of S-edge by sulfur, and leading to 37% coverage, i.e. creation of anionic vacancies, upon reduction by dihydrogen and production of H2S. Significant entropic and enthalpic corrections to electronic energies are deduced from the sets of normal modes vibration frequencies computed for all stationary and transition states. On that basis, we revisit and discuss the surface phase diagrams for M- and S- edges as a function of temperature, H2 partial pressure and H2S/H2 molar ratio, with respect to ranges of conditions relevant to industrial hydrotreating operations. We show that in such conditions, anionic vacancies on the M-edge, and surface SH groups on the M- and S- edges, may coexist at equilibrium. Moderate activation barriers connect stationary states along all paths explored.

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