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Jacky Even

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Published work

3 published item(s)

preprint2022arXiv

Direct visualization of ultrafast lattice ordering triggered by an electron-hole plasma in 2D perovskites

Direct visualization of ultrafast coupling between charge carriers and lattice degrees of freedom in photo-excited semiconductors has remained a long-standing challenge and is critical for understanding the light-induced physical behavior of materials under extreme non-equilibrium conditions. Here, by monitoring the evolution of the wave-vector resolved ultrafast electron diffraction intensity following above-bandgap photo-excitation, we obtain a direct visual of the structural dynamics in monocrystalline 2D perovskites. Analysis reveals a surprising, light-induced ultrafast lattice ordering resulting from a strong interaction between hot-carriers and the perovskite lattice, which induces an in-plane octahedra rotation, towards a more symmetric phase. Correlated ultrafast spectroscopy performed at the same carrier density as ultrafast electron diffraction reveals that the creation of a hot and dense electron-hole plasma triggers lattice ordering at short timescales by modulating the crystal cohesive energy. Finally, we show that the interaction between the carrier gas and the lattice can be altered by tailoring the rigidity of the 2D perovskite by choosing the appropriate organic spacer layer.

preprint2020arXiv

From latent ferroelectricity to hyperferroelectricity in alkali lead halide perovskites

Using first principles calculations we show that several alkali lead halides potentially present collective ferroelectric polarization. This should occur at least at the nanoscale; it could be detected macroscopically provided it is not concealed by lattice vibrations in the temperature range of stability of the cubic perovskite phase. For potassium lead halides and for alkali lead fluorides, remarkably, the ferroelectric behavior turns hyper-ferroelectric, suggesting a more robust ferroelectric polarization in spite of depolarization potentials induced by charge accumulation on surfaces or interfaces.

preprint2011arXiv

Ab initio calculation of Effective Work Functions for a TiN/HfO2/SiO2/Si transistor stack

Ab initio techniques are used to calculate the effective work function (Weff) of a TiN/HfO2/SiO2/Si stack representing a metal-oxide-semiconductor (MOS) transistor gate taking into account first order many body effects. The required band offsets were calculated at each interface varying its composition. Finally the transitivity of LDA calculated bulk band lineups were used and completed by MBPT bulk corrections for the terminating materials (Si and TiN) of the MOS stack. With these corrections the ab initio calculations predict a Weff of a TiN metal gate on HfO2 to be close to 5.0 eV.