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Pierre Carrier

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cond-mat.mtrl-sci cond-mat.str-el physics.atom-ph physics.comp-ph quant-ph

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preprint2011arXiv

Lanczos-based Low-Rank Correction Method for Solving the Dyson Equation in Inhomogenous Dynamical Mean-Field Theory

Inhomogeneous dynamical mean-field theory has been employed to solve many interesting strongly interacting problems from transport in multilayered devices to the properties of ultracold atoms in a trap. The main computational step, especially for large systems, is the problem of calculating the inverse of a large sparse matrix to solve Dyson's equation and determine the local Green's function at each lattice site from the corresponding local self-energy. We present a new efficient algorithm, the Lanczos-based low-rank algorithm, for the calculation of the inverse of a large sparse matrix which yields this local (imaginary time) Green's function. The Lanczos-based low-rank algorithm is based on a domain decomposition viewpoint, but avoids explicit calculation of Schur complements and relies instead on low-rank matrix approximations derived from the Lanczos algorithm, for solving the Dyson equation. We report at least a 25-fold improvement of performance compared to explicit decomposition (such as sparse LU) of the matrix inverse. We also report that scaling relative to matrix sizes, of the low-rank correction method on the one hand and domain decomposition methods on the other, are comparable.

preprint2009arXiv

Curvature Effects on Optical Response of Si nanocrystals in SiO2 having Interface Silicon Suboxides

Several models of oxygenated and hydrogenated surfaces of Si quantum wells and Si nanocrystals of variable shapes have been constructed in order to assess curvature effects on energy gaps due to the three Si-suboxides. Si-suboxides in partially oxydized models of nanocrystals of spherical shapes (or quantum dots) are shown to reduce energy gaps compared to the hydrogenated nanocrystals, consistent with previous results in the literature. This trend is shown to be reversed when planar interfaces are formed in Si-NC inside SiO2 thin films, as in Si quantum wells. At planar interfaces (or surfaces) the electronic charge density is shown to become extended and to distribute among the Si-suboxides, thus generating along these planar interfaces extended, or delocalized, states. This delocalization of the electronic states then increase the energy gap compared to equivalent hydrogenated interfaces (or surfaces). Determination of geometric effects of curvature on the band gaps are based on density functional theory (DFT) using the real-space numerical approach implemented in the ``Pseudopotential Algorithm for Real-Space Electronic Structure'' (PARSEC) program. A method for measuring interface effects due to Si-suboxides in Si-NC in SiO2 is also suggested: by comparing photoluminescence (PL) between as-grown and annealed Si-NC samples. The DFT calculations suggest that blueshift of more than 0.2 eV of the PL should be observed in as-grown samples having Si-suboxides at their planar interfaces, in comparison to annealed samples above 950 degree Celcius that have fewer or no Si-suboxides once annealed, providing that the bulk of Si-NC remains unaltered.

preprint2002arXiv

Optical properties of structurally-relaxed Si/SiO$_2$ superlattices: the role of bonding at interfaces

We have constructed microscopic, structurally-relaxed atomistic models of Si/SiO$_2$ superlattices. The structural distortion and oxidation-state characteristics of the interface Si atoms are examined in detail. The role played by the interface Si suboxides in raising the band gap and producing dispersionless energy bands is established. The suboxide atoms are shown to generate an abrupt interface layer about 1.60 Åthick. Bandstructure and optical-absorption calculations at the Fermi Golden rule level are used to demonstrate that increasing confinement leads to (a) direct bandgaps (b) a blue shift in the spectrum, and (c) an enhancement of the absorption intensity in the threshold-energy region. Some aspects of this behaviour appear not only in the symmetry direction associated with the superlattice axis, but also in the orthogonal plane directions. We conclude that, in contrast to Si/Ge, Si/SiO$_2$ superlattices show clear optical enhancement and a shift of the optical spectrum into the region useful for many opto-electronic applications.