Researcher profile

Petr Nachtigall

Petr Nachtigall contributes to research discovery and scholarly infrastructure.

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Published work

3 published item(s)

preprint2022arXiv

Accurate large-scale simulations of siliceous zeolites by neural network potentials

The computational discovery and design of zeolites is a crucial part of the chemical industry. Finding highly accurate while computationally feasible protocol for identification of hypothetical zeolites that could be targeted experimentally is a great challenge. To tackle the challenge, we trained neural network potentials (NNP) with the SchNet architecture on a structurally diverse database of density functional theory (DFT) data. This database was iteratively extended by active learning to cover not only low-energy equilibrium configurations but also high-energy transition states. We demonstrate that the resulting reactive NNPs retain the accuracy of the DFT reference for thermodynamic stabilities, vibrational properties, and reactive and non-reactive phase transformations. The novel NNPs outperforms specialized, analytical force fields for silica, such as ReaxFF, by order(s) of magnitude in accuracy, while speeding up the calculations in comparison to DFT by at least three orders of magnitude. As a showcase, we screened an existing zeolite database containing 330 thousand structures and revealed more than 20 thousand additional hypothetical frameworks in the thermodynamically accessible range of zeolite synthesis. Hence, our NNPs are expected to be essential for future high-throughput studies on the structure and reactivity of hypothetical and existing zeolites.

preprint2021arXiv

Doping isolated one-dimensional antiferro-magnetic semiconductor Vanadium tetrasulfide ($VS_4$) nanowires with carriers induces half-metallicity

Quasi one-dimensional (1D) vanadium tetrasulfide ($VS_4$) nanowires (NWs) are synthetic semiconductors which combine with each other through Van der Waals interactions to form bulk phases. However, the properties of these individual nanowires remain unknown. Nevertheless, our calculations of their stability indicate that $VS_4$) NWs can be separated from their bulk structures. Accordingly, we theoretically investigated the geometrical, electronic, and magnetic properties of bulk phase and isolated $VS_4$ NWs. Our results indicate that both bulk phase and isolated $VS_4$ NWs are semiconductors with band gaps of 2.24 and 2.64 eV, respectively, and that they prefer the antiferromagnetic (AFM) ground state based on DFT calculations. These calculations also suggested that isolated $VS_4$ NWs show half-metallic antiferromagnetism upon electron and hole doping because carrier doping splits the spin degeneracy to induce local spin polarisation. As a result, spin polarisation currents in isolated $VS_4$ NWs can be manipulated with locally applied gate voltage. Therefore, these 1D AFM materials have a high potential for advancing both fundamental research and spintronic applications because they are more resistant to magnetic perturbation than their 1D ferromagnetic counterparts.

preprint2019arXiv

Control of spintronic and electronic properties of bimetallic and vacancy-ordered vanadium carbide MXenes via surface functionalization

MXenes are 2D transition metal carbides with high potential for overcoming limitations of conventional two-dimensional electronics. In this context, various MXenes have shown magnetic properties suitable for applications in spintronics, yet the number of MXenes reported so far is far smaller than their parental MAX phases. Therefore, we have studied the structural, electronic and magnetic properties of bimetallic and vacancy-ordered MXenes derived from a new $(V_{2/3}Zr_{1/3})_2AlC $ MAX phase to assess whether MXene exfoliation would return stable magnetic materials. In particular, we have investigated the properties of pristine and surface-functionalized $(V_{2/3}Zr_{1/3})_2CX_2$ bimetallic and $(V_{2/3} \square_{1/3})_2CX2$ vacancy-ordered MXenes with X = O, F and OH. Our density functional theory (DFT) calculations showed that modifying the MXene stoichiometry and/or MXene surface functionalization changes MXene properties. After testing all possible combinations of metallic motifs and functionalization, we identified $V_{2/3}Zr_{1/3})_2CX_2$, $(V_{2/3}\square_{1/3})_2CF_2$ and $(V_{2/3}\square_{1/3})_2C(OH)_2$ as stable structures. Among them, $(V_{2/3}Zr_{1/3})_2CO_2$ MXene is predicted to be an FM intrinsic half-semiconductor with a remarkably high Curie temperature ($T_C$)) of 270 K. The $(V_{2/3}Zr_{1/3})_2C(OH)_2$ MXene exhibits a rather low work function (WF) (1.37 eV) and is thus a promising candidate for ultra-low work function electron emitters. Conversely, the $(V_{2/3}\square_{1/3})_2CF_2$ MXene has a rather high WF and hence can be used as a hole injector for Schottky-barrier-free contact applications. Overall, our proof-of-concept study shows that theoretical predictions of MXene exfoliation and properties support further experimental research towards developing spintronics devices.