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Petr Klenovský

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Published work

4 published item(s)

preprint2022arXiv

Electric field induced tuning of electronic correlation in weakly confining quantum dots

We conduct a combined experimental and theoretical study of the quantum-confined Stark effect in GaAs/AlGaAs quantum dots obtained with the local droplet etching method. In the experiment, we probe the permanent electric dipole and polarizability of neutral and positively charged excitons weakly confined in GaAs quantum dots by measuring their light emission under the influence of a variable electric field applied along the growth direction. Calculations based on the configuration-interaction method show excellent quantitative agreement with the experiment and allow us to elucidate the role of Coulomb interactions among the confined particles and -- even more importantly -- of electronic correlation effects on the Stark shifts. Moreover, we show how the electric field alters properties such as built-in dipole, binding energy, and heavy-light hole mixing of multiparticle complexes in weakly confining systems, underlining the deficiencies of commonly used models for the quantum-confined Stark effect.

preprint2020arXiv

Theory of magneto-optical properties of neutral and charged excitons in GaAs/AlGaAs quantum dots

Detailed theoretical study of the magneto-optical properties of weakly confining GaAs/AlGaAs quantum dots is provided. We focus on the diamagnetic coefficient and the $g$-factor of the neutral and the charged excitonic states, respectively, and their evolution with various dot sizes for the magnetic fields applied along $[001]$ direction. For the calculations we utilize the combination of ${\bf k}\cdot{\bf p}$ and the configuration interaction methods. We decompose the theory into four levels of precision,~i.e., (i) single-particle electron and hole states, (ii) non-interacting electron-hole pair, (iii) electron-hole pair constructed from the ground state of both quasiparticles and interacting via the Coulomb interaction (i.e. with minimal amount of correlation), and (iv) that including the effect of correlation. The aforementioned approach allows us to pinpoint the dominant influence of various single- and multi-particle effects on the studied magneto-optical properties, allowing the characterization of experiments using models which are as simple as possible, yet retaining the detailed physical picture.

preprint2019arXiv

Resolving the temporal evolution of line broadening in quantum emitters

Light emission from solid-state quantum emitters is inherently prone to environmental decoherence, which results in an inhomogeneous line broadening and in the deterioration of photon indistinguishability. Here we employ photon correlation Fourier spectroscopy (PCFS) to study the temporal evolution of such a broadening for the biexciton and exciton emission in resonantly driven GaAs quantum dots. Differently from previous experiments, the time scales we probe range from a few nanoseconds to milliseconds and, simultaneously, the spectral resolution we achieve can be as small as 2 $μ$eV. We find pronounced differences in the temporal evolution of the two lines, which we attribute to differences in their homogeneous linewidth and sensitivity to charge noise. We then analyze the effect of irradiation with additional white light, which reduces blinking at the cost of enhanced charge noise. Due to its robustness against experimental imperfections and its high temporal resolution and bandwidth, PCFS outperforms established spectroscopy techniques, such as Michelson interferometry. We discuss its practical implementation, its limitations, and the possibility to use it to estimate the indistinguishability of consecutively emitted single photons for applications in quantum communication and photonic-based quantum information processing.

preprint2015arXiv

Excitonic fine structure splitting in type-II quantum dots

Excitonic fine structure splitting in quantum dots is closely related to the lateral shape of the wave functions. We have studied theoretically the fine structure splitting in InAs quantum dots with a type-II confinement imposed by a GaAsSb capping layer. We show that very small values of the fine structure splitting comparable with the natural linewidth of the excitonic transitions are achievable for realistic quantum dot morphologies despite the structural elongation and the piezoelectric field. For example, varying the capping layer thickness allows for a fine tuning of the splitting energy. The effect is explained by a strong sensitivity of the hole wave function to the morphology of the structure and a mutual compensation of the electron and hole anisotropies. The oscillator strength of the excitonic transitions in the studied quantum dots is comparable to those with a type-I confinement which makes the dots attractive for quantum communication technology as emitters of polarization-entangled photon pairs.