BZPEERReading, trust and collaboration for research
Menu

Discover

GraphFollow connections around a paper, topic or saved view.

Workspaces

HomePick up where your research flow left off.InboxHandle requests, replies and notifications from one place.CollectionsCurate reading lists, evidence sets and shareable dossiers.ResearchSee your private provenance graph, trail and imports.CollaborationMove from discovery into focused discussion rooms.PublishDraft, preview and publish full-text research articles.

Network

ExpertsFind specialists worth following or asking for help.CommunitiesJoin research circles organized around shared work.PartnersSee external organizations active around the same topics.

Opportunities

ListingsBrowse roles, calls and collaborations with clearer fit signals.

Account

Log inReturn to your reading and collaboration workspace.Create accountStart saving work, following people and joining teams.
Log inCreate account

Researcher profile

Peter Kratzer

Peter Kratzer contributes to research discovery and scholarly infrastructure.

ResearcherAffiliation not importedOpen to collaborate
cond-mat.mtrl-scicond-mat.mes-hallcond-mat.str-elphysics.comp-phcond-mat.dis-nnphysics.chem-ph

Trust snapshot

Quick read

Trust 21 - EmergingVerification L1Unclaimed author
13works
0followers
6topics
4close collaborators

Actions

Decide how to stay connected

Follow researcher0

Identity and collaboration

How to connect with this researcher

Claiming links this public author record to a researcher profile and unlocks direct collaboration workflows.

Log in to claim

Direct collaboration

Open a focused conversation when the fit is right

Claim this author entity first to unlock direct invitations.

Research graph

See the researcher in context

Open full explorer

Inspect adjacent work, topics, institutions and collaborators without jumping out to a separate graph page.

Building this graph slice

BZPEER is loading the nearby papers, people, topics and institutions for this page.

Published work

13 published item(s)

preprint2026arXiv

Enhanced Electron Reflectionat Mott-Insulator Interfaces

The Klein paradox describes an incoming electron being scattered at a supercritical barrier to create electron-positron pairs, a phenomenon widely discussed in textbooks. While demonstrating this phenomenon experimentally with the fundamental particles remains challenging, condensed matter analogs are more accessible to experimental realization. For spinless quasi-particles, theoretical works show an enhancement of the pair production rate, and analogs of this effect in condensed matter systems have been studied theoretically. Here, we present another condensed matter system, a heterostructure comprised of two materials with strongly and weakly interacting electrons, that allows for constructing analytical solutions using the hierarchy-of-correlations method. The results show enhanced electron reflection related with the production of doublon-holon pairs, as known from the Klein paradox.

0 citations0 reviewsNo code linkedOpen access
preprint2026arXiv

Femtosecond spin-state switching dynamics of spin-crossover molecules condensed in thin films

The photoinduced switching of Fe(II)-based spin-crossover complexes from singlet to quintet takes place at ultrafast time scales. This a priori spin-forbidden transition triggered numerous time-resolved experiments of solvated samples to elucidate the mechanism at play. The involved intermediate states remain uncertain. We apply ultrafast x-ray spectroscopy in molecular films as a method sensitive to spin, electronic, and nuclear degrees of freedom. Combining the progress in molecule synthesis and film growth with the opportunities at x-ray free-electron lasers, we analyze the transient evolution of the Fe L3 fine structure at room temperature. Our measurements and calculations indicate the involvement of an Fe triplet intermediate state. The high-spin state saturates at half of the available molecules, limited by molecule-molecule interaction within the film.

0 citations0 reviewsNo code linkedOpen access
preprint2025arXiv

Bound States at Semiconductor -- Mott Insulator Interfaces

Utilizing the hierarchy of correlations in the context of a Fermi-Hubbard model, we deduce the presence of quasi-particle bound states at the interface between a Mott insulator and a semiconductor, as well as within a semiconductor-Mott-semiconductor heterostructure forming a quantum well. In the case of the solitary interface, the existence of bound states necessitates the presence of an additional perturbation with a minimal strength depending on the spin background of the Mott insulator. Conversely, within the quantum well, this additional perturbation is still required to have bound states while standing-wave solutions even exist in its absence.

0 citations0 reviewsNo code linkedOpen access
preprint2022arXiv

Orbital and magnetic ordering in single-layer FePS3: A DFT+U study

Among the numerous 2D system that can be prepared via exfoliation, iron phosphorus trisulfide (FePS3) attracts a lot of attention recently due to its broad-range photoresponse, its unusual Ising-type magnetic order and possible applications in spintronic nano-devices. Despite various experimental and theoretical-computational reports, there are still uncertainties in identifying its magnetic ground state. In this paper, we investigate the structural and magnetic properties of single-layer FePS3 by using Density Functional Theory. Our findings show that orbital ordering leads to a variation in distance between pairs of iron atoms by 0.14 Angstrom. These lattice distortions, albeit small, trigger different (ferromagnetic and antiferromagnetic) exchange couplings so that the ground state consists of ferromagnetically aligned zigzag chains along the long Fe-Fe bonds which couple antiferromagnetically along the shorter Fe-Fe bonds. Within the DFT+U framework, we parameterize a spin Hamiltonian including Heisenberg, single-ion anisotropy, Dzyaloshinskii-Moriya and biquadratic interactions. Using U=2.22eV gives a consistent description of both the electronic band gap and the Neel temperature in 2D FePS3.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Real-Time Time-Dependent Density Functional Theory within FHI-aims

Real-Time Time-Dependent Density Functional Theory (TDDFT) has become an attractive tool to model quantum dynamics on a first-principles Density Functional Theory level. In recent years, several developments and applications in this field were achieved and hopefully lead to new insights. We present here our versatile and efficient Real-Time TDDFT implementation into the all-electron numerical basis-set DFT code package FHI-aims. This article is meant as a short overview on how we performed this task and what can be done with our implementation. We further shed light on the connection of the basis set size to the accuracy of absorption spectrum simulation results.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Relaxation of electrons in quantum-confined states in Pb/Si(111) thin films from master equation with first-principles-derived rates

Atomically thin films of Pb on Si(111) provide an experimentally tunable system comprising a highly structured electronic density of states. The lifetime of excited electrons in these states is limited by both electron-electron (e-e) and electron-phonon (e-ph) scattering. We employ the description by a master equation for the electronic occupation numbers to analyze the relative importance of both scattering mechanisms. The electronic and phononic band structures, as well as the matrix elements for electron-phonon coupling within deformation potential theory were obtained from density functional calculations, thus taking into account quantum confinement effects. For the relaxation dynamics, the contribution of impact ionization processes to the lifetime is estimated from the imaginary part of the electronic self-energy calculated in the GW approximation. By numerically solving rate equations for the occupations of the Pb-derived electronic states coupled to a phononic heat bath, we are able to follow the distribution of the electronic excitation energy to the various modes of Pb lattice vibrations. While e-e scattering is the dominant relaxation mechanism, we demonstrate that the e-ph scattering is highly phonon-mode-specific, with a large contribution from surface phonons. At electron energies of about 0.3 eV above the Fermi surface, a 'phonon bottleneck' characteristic of relaxation in nanostructures with well-separated electronic states is observed. The time scales extracted from the simulations are compared to data from pump-probe experiments using time-resolved two-photon photoemission.

0 citations0 reviewsNo code linkedOpen access
preprint2014arXiv

Interplay of growth mode and thermally induced spin accumulation in epitaxial Al/Co$_2$TiSi/Al and Al/Co$_2$TiGe/Al contacts

The feasibility of thermally driven spin injectors built from half-metallic Heusler alloys inserted between aluminum leads was investigated by means of {\em ab initio} calculations of the thermodynamic equilibrium and electronic transport. We have focused on two main issues and found that: (i) the interface between Al and the closely lattice-matched Heusler alloys of type Co$_2$Ti$Z$ ($Z=$ Si or Ge) is stable under various growth conditions; and (ii) the conventional and spin-dependent Seebeck coefficients in such heterojunctions exhibit a strong dependence on both the spacer and the atomic composition of the Al/Heusler interface. The latter quantity gives a measure of the spin accumulation and varies between $+8$~$μ$V/K and $-3$~$μ$V/K near $300$~K, depending on whether a Ti-Ge or a Co-Co plane makes the contact between Al and Co$_2$TiGe in the trilayer. Our results show that it is in principle possible to tailor the spin-caloric effects by a targeted growth control of the samples.

0 citations0 reviewsNo code linkedOpen access
preprint2013arXiv

As vacancies, Ga antisites and Au impurities in Zincblende and Wurtzite GaAs nanowire segments from first principles

In this paper some specific issues related to point defects in GaAs nanowires are addressed with the help of density functional theory calculations. These issues mainly arise from the growth of nanowires under conditions different from those used for thin films or bulk GaAs, such as the co-existence of zincblende and wurtzite polytypes, the use of gold particles as catalyst, and the arsenic-limited growth regime. Hence, we carry out density-functional calculations for As vacancies, Ga_As antisites, and Au impurities in ZB and WZ GaAs crystals. Our results show that As vacancies can diffuse within in a ZB GaAs crystal with migration barriers of ~1.9 eV. Within WZ GaAs, As vacancy diffusion is found to be anisotropic, with low barriers of 1.60 up to 1.79 eV (depending on doping conditions) in the ab-plane, while there are higher barriers of 2.07 to 2.44 eV to diffuse along the c-axis. The formation energy of Au impurities is found to be generally much lower than those of arsenic vacancies or Ga_As antisites. Thus, Au impurities will be the dominant defects formed in Au-catalyzed nanowire growth. Moreover, we find that it is energetically more favorable by 1 to 2 eV for an Au impurity to replace a lattice Ga atom than a lattice As atom in GaAs. An Au substitutional defect for a lattice Ga atom in ZB GaAs is found to create a charge transfer level in the lower half of the band gap. While our calculations locate this level at E_v + 0.22eV, taking into account the inaccuracy of the density functional that ought to be corrected by a downshift of E_v by about 0.2eV results in good agreement with the experimental result of E_v + 0.4eV.

0 citations0 reviewsNo code linkedOpen access
preprint2013arXiv

Comparison of density functionals for nitrogen impurities in ZnO

Hybrid functionals and empirical correction schemes are compared to conventional semi-local density functional theory (DFT) calculations in order to assess the predictive power of these methods concerning the formation energy and the charge transfer level of impurities in the wide-gap semiconductor ZnO. While the generalized gradient approximation fails to describe the electronic structure of the N impurity in ZnO correctly, methods that widen the band gap of ZnO by introducing additional non-local potentials yield the formation energy and charge transfer level of the impurity in reasonable agreement with hybrid functional calculations. Summarizing the results obtained with different methods, we corroborate earlier findings that the formation of substitutional N impurities at the oxygen site in ZnO from N atoms is most likely slightly endothermic under oxygen-rich preparation conditions, and introduces a deep level more than 1eV above the valence band edge of ZnO. Moreover, the comparison of methods elucidates subtle differences in the predicted electronic structure, e.g. concerning the orientation of unoccupied orbitals in the crystal field and the stability of the charged triplet state of the N impurity. Further experimental or theoretical analysis of these features could provide useful tests for validating the performance of DFT methods in their application to defects in wide-gap materials.

0 citations0 reviewsNo code linkedOpen access
preprint2013arXiv

Electronic, magnetic and transport properties of full and half-metallic thin film Heusler alloys

The electronic and magnetic bulk properties of half-metallic Heusler alloys such as Co$_{2}$FeSi, Co$_{2}$FeAl, Co$_{2}$MnSi and Co$_{2}$MnAl are investigated by means of {\em ab initio} calculations in combination with Monte Carlo simulations. The electronic structure is analyzed using the plane wave code Quantum Espresso and magnetic exchange interactions are determined using the KKR method. From the magnetic exchange interactions the Curie temperature is obtained via Monte Carlo simulations. In addition, electronic transport properties of the trilayer systems consisting of two semi-infinite platinum leads and a Heusler layer in between are obtained from the fully relativistic KKR method by employing the Kubo-Greenwood formalism. The focus is on thermoelectric properties, namely the Seebeck effect and its spin dependence. It turns out that already thin Heusler layers provide highly polarized currents within the systems. This is attributed to the recovery of half-metallicity with increasing thickness. The absence of electronic states of the spin down electrons around the Fermi level suppresses the contribution of this spin channel to the total conductivity. This strongly influences the thermoelectric properties of such systems and results in polarized thermoelectric currents.

0 citations0 reviewsNo code linkedOpen access
preprint2010arXiv

Indium-Gallium Segregation in CuIn$_{x}$Ga$_{1-x}$Se$_2$: An ab initio based Monte Carlo Study

Thin-film solar cells with CuIn$_x$Ga$_{1-x}$Se$_2$ (CIGS) absorber are still far below their efficiency limit, although lab cells reach already 19.9%. One important aspect is the homogeneity of the alloy. Large-scale simulations combining Monte Carlo and density functional calculations show that two phases coexist in thermal equilibrium below room temperature. Only at higher temperatures, CIGS becomes more and more a homogeneous alloy. A larger degree of inhomogeneity for Ga-rich CIGS persists over a wide temperature range, which may contribute to the low observed efficiency of Ga-rich CIGS solar cells.

0 citations0 reviewsNo code linkedOpen access
preprint2010arXiv

Magnetism in C or N-doped MgO and ZnO: density-functional study of impurity pairs

It is shown that substitution of C or N for O recently proposed as a way to create ferromagnetism in otherwise nonmagnetic oxide insulators is curtailed by formation of impurity pairs, and the resultant C2 spin=1 dimers as well as the isoelectronic N2^{2+} interact antiferromagneticallly in p-type MgO. For C-doped ZnO, however, we demonstrate using the HSE hybrid functional that a resonance of the spin-polarized C2 ppπ* states with the host conduction band results in a long-range ferromagnetic interaction. Magnetism of open-shell impurity molecules is proposed as a possible route to d0-ferromagnetism in oxide spintronic materials.

0 citations0 reviewsNo code linkedOpen access
preprint2010arXiv

Modeling materials with optimized transport properties

Following demands for materials with peculiar transport properties, e.g. in magnetoelectronics or thermoelectrics, there is a need for materials modeling at the quantum-mechanical level. We combine density-functional with various scale-bridging tools to establish correlations between the macroscopic properties and the atomic structure of materials. For examples, magnetic memory devices exploiting the tunneling magneto-resistance (TMR) effect depend crucially on the spin polarization of the electrodes. Heusler alloys, e.g. Co2MnSi, if perfectly ordered, are ferromagnetic half-metals with (ideally) 100% spin polarization. Their performance as electrodes in TMR devices is limited by atomic disorder and deviations from perfect stoichiometry, but also by interface states at the tunneling barrier. We use ab initio thermodynamics in conjunction with the cluster expansion technique to show that excess manganese in the alloy and at the interface helps to preserve the desired half-metallic property. As another example, nanostructured materials with a reduced thermal conductivity but good electrical conductivity are sought for applications in thermoelectrics. Semiconductor heterostructures with a regular arrangement of nanoscale inclusions ('quantum dot superlattices') hold the promise of a high thermoelectric figure of merit. Our theoretical analysis reveals that an increased figure of merit is to be expected if the quantum dot size, the superlattice period and the doping level are all suitably fine-tuned. Such a superlattice thus constitutes a material whose transport properties are controlled by geometrical features at the nanoscale.

0 citations0 reviewsNo code linkedOpen access