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Peter Deák

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Published work

4 published item(s)

preprint2020arXiv

A Koopmans-compliant screened exchange potential with correct asymptotic behavior for semiconductors

The performance of density functional theory depends largely on the approximation applied for the exchange functional. We propose here a novel screened exchange potential for semiconductors, with parameters based on the physical properties of the underlying microscopic screening and obeying the requirements for proper asymptotic behavior. We demonstrate that this functional is Koopmans-compliant and reproduces a wide range of band gaps. We also show, that the only tunable parameter of the functional can be kept constant upon changing the cation or the anion isovalently, making the approach suitable for treating alloys.

preprint2020arXiv

Self-consistent potential correction for charged periodic systems

Supercell models are often used to calculate the electronic structure of local perturbations from the ideal periodicity in the bulk or on the surface of a crystal or in wires. When the defect or adsorbent is charged, a jellium counter charge is applied to maintain overall neutrality, but the interaction of the artificially repeated charges has to be corrected, both in the total energy and in the one-electron eigenvalues and eigenstates. This becomes paramount in slab or wire calculations, where the jellium counter charge may induce spurious states in the vacuum. We present here a self-consistent potential correction scheme and provide successful tests of it for bulk and slab calculations.

preprint2014arXiv

Observation of vacancy-related polaron states at the surface of anatase and rutile TiO2 by high-resolution photoelectron spectroscopy

Defects in the surface region of a reducible oxide, as TiO2, have a profound effect on applications, while their nature is very much influenced by the possibility of small polaron formation. Here, we probe rutile (110) and anatase (101) single crystals via high-resolution ultraviolet photoelectron spectroscopy and resolve multiple components of the well-known defect state in the band gap. In rutile, we find two at VBM+2.1 eV and VBM+1.4 eV, which we assign to subsurface polaron traps and vacancy-bound states, respectively, confirming the predicted partial suppression of polaron formation at high vacancy concentration. New defects are created in situ on the anatase surface by the synchrotron beam. We assign a component at VBM+2.3 eV, which can be removed by annealing, to polaron states associated with surface oxygen vacancies. We also identify a second component at VBM+1.6 eV, which can not be removed by annealing, and is too deep to be associated with oxygen vacancies.

preprint2013arXiv

Calculation ofthe transitions and migration of nitrogen and vacancy related defects,with implications on the formation of NV centers in bulk diamond

Formation and excitation energies as well charge transition levels, are determined forthe substitutional nitrogen (Ns),the vacancy (V) and related point defects (NV, NVH, N2, N2V and V2) by screened non-local hybrid density functional supercell plane wave calculations in bulk diamond. In additionthe activation energy for V and NV diffusion is calculated.We find good agreement between theory and experiment for the previously well-establisheddata, and predict missing ones. Based on the calculated properties of these defects, the formation of the negatively charged nitrogen-vacancy center is studied, which is a prominent candidate for application in quantum information processing and for nanosensors. We find that the concentration of NV defects are limited in natural diamonds due to the relatively high formation energy of NV. Our results imply that NV defects dominantly form just in the early stage of annealing in N-doped and irradiated diamonds. We find that the amphoteric divacancy defect with multiple acceptor states may significantly influence the charge state and photo-stability of NV in irradiated diamond samples.