Researcher profile

Peng Zeng

Peng Zeng contributes to research discovery and scholarly infrastructure.

ResearcherAffiliation not importedOpen to collaborate

Trust snapshot

Quick read

Trust 13 - Baseline
2works
0followers
3topics
4close collaborators

Actions

Decide how to stay connected

Follow researcher0

Research graph

See the researcher in context

Open full explorer

Inspect adjacent work, topics, institutions and collaborators without jumping out to a separate graph page.

Building this graph slice

BZPEER is loading the nearby papers, people, topics and institutions for this page.

Published work

2 published item(s)

preprint2015arXiv

Photo-induced electron transfer in the strong coupling regime: Waveguide-plasmon polaritons

Reversible exchange of photons between a material and an optical cavity can lead to the formation of hybrid light--matter states where material properties such as the work function\cite{Hutchison_AM2013a}, chemical reactivity\cite{Hutchison_ACIE2012a}, ultra--fast energy relaxation \cite{Salomon_ACIE2009a,Gomez_TJOPCB2012a} and electrical conductivity\cite{Orgiu_NM2015a} of matter differ significantly to those of the same material in the absence of strong interactions with the electromagnetic fields. Here we show that strong light--matter coupling between confined photons on a semiconductor waveguide and localised plasmon resonances on metal nanowires modifies the efficiency of the photo--induced charge--transfer rate of plasmonic derived (hot) electrons into accepting states in the semiconductor material. Ultra--fast spectroscopy measurements reveal a strong correlation between the amplitude of the transient signals, attributed to electrons residing in the semiconductor, and the hybridization of waveguide and plasmon excitations.

preprint2012arXiv

Mobility enhancement and highly efficient gating of monolayer MoS2 transistors with Polymer Electrolyte

We report electrical characterization of monolayer molybdenum disulfide (MoS2) devices using a thin layer of polymer electrolyte consisting of poly(ethylene oxide) (PEO) and lithium perchlorate (LiClO4) as both a contact-barrier reducer and channel mobility booster. We find that bare MoS2 devices (without polymer electrolyte) fabricated on Si/SiO2 have low channel mobility and large contact resistance, both of which severely limit the field-effect mobility of the devices. A thin layer of PEO/ LiClO4 deposited on top of the devices not only substantially reduces the contact resistance but also boost the channel mobility, leading up to three-orders-of-magnitude enhancement of the field-effect mobility of the device. When the polymer electrolyte is used as a gate medium, the MoS2 field-effect transistors exhibit excellent device characteristics such as a near ideal subthreshold swing and an on/off ratio of 106 as a result of the strong gate-channel coupling.