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Peng Xiong

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cond-mat.mes-hall cond-mat.mtrl-sci Biological Physics cond-mat.other cond-mat.soft physics.app-ph

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preprint2020arXiv

Molecular Patterning and Directed Self-Assembly of Gold Nanoparticles on GaAs

The ability to create micro/nano patterns of organic self-assembled monolayers on semiconductor surfaces is crucial for fundamental studies and applications in a number of emerging fields in nanoscience. Here, we demonstrate the patterning of thiol molecular SAMs on oxide-free GaAs surface by dip-pen nanolithography and micro-contact printing, facilitated by a process of surface etching and passivation of the GaAs. A quantitative analysis on the molecular diffusion on GaAs was conducted by examining the writing of nanoscale dot and line patterns by DPN, which agrees well with surface diffusion models. The functionality of the patterned thiol molecules was demonstrated by directed self-assembly of gold nanoparticles onto a template of 4-Aminothiophenol SAM on GaAs. The highly selective assembly of the Au NPs was evidenced with atomic force microscopy and scanning electron microscopy. The ability to precisely control the assembly of Au NPs on oxide-free semiconductor surfaces using molecular templates may lead to an efficient bottom-up method for the fabrication of nano-plasmonic structures.

preprint2020arXiv

Robust Gapless Surface State against Surface Magnetic Impurities on (Bi$_{0.5}$Sb$_{0.5}$)$_2$Te$_3$ Evidenced by In Situ Magnetotransport Measurements

Despite extensive experimental and theoretical efforts, the important issue of the effects of surface magnetic impurities on the topological surface state of a topological insulator (TI) remains unresolved. We elucidate the effects of Cr impurities on epitaxial thin films of (Bi$_{0.5}$Sb$_{0.5}$)$_{2}$Te$_{3}$: Cr adatoms are incrementally deposited onto the TI held in ultrahigh vacuum at low temperatures, and \textit{in situ} magnetoconductivity and Hall effect measurements are performed at each increment with electrostatic gating. In the experimentally identified surface transport regime, the measured minimum electron density shows a non-monotonic evolution with the Cr density ($n_{\mathrm{Cr}}$): it first increases and then decreases with $n_{\mathrm{Cr}}$. This unusual behavior is ascribed to the dual roles of the Cr as ionized impurities and electron donors, having competing effects of enhancing and decreasing the electronic inhomogeneities in the surface state at low and high $n_{\mathrm{Cr}}$ respectively. The magnetoconductivity is obtained for different $n_{\mathrm{Cr}}$ on one and the same sample, which yields clear evidence that the weak antilocalization effect persists and the surface state remains gapless up to the highest $n_{\mathrm{Cr}}$, contrary to the expectation that the deposited Cr should break the time reversal symmetry and induce a gap opening at the Dirac point.

preprint2015arXiv

Evidence for Half-Metallicity in n-type HgCr2Se4

High quality HgCr$_2$Se$_4$ single crystals have been investigated by magnetization, electron transport and Andreev reflection spectroscopy. In the ferromagnetic ground state, the saturation magnetic moment of each unit cell corresponds to an integer number of electron spins (3 $μ_B$/Cr$^{3+}$), and the Hall effect measurements suggest n-type charge carriers. Spin polarizations as high as $97\%$ were obtained from fits of the differential conductance spectra of HgCr$_2$Se$_4$/Pb junctions with the modified Blonder-Tinkham-Klapwijk (BTK) theory. The temperature and bias-voltage dependencies of the sub-gap conductance are consistent with recent theoretical calculations based on spin active scatterings at a superconductor/half metal interface. Our results suggest that n-HgCr$_2$Se$_4$ is a half metal, in agreement with theoretical calculations that also predict undoped HgCr$_2$Se$_4$ is a magnetic Weyl semimetal.

preprint2014arXiv

Bias current dependence of the spin lifetime in insulating Al$_{0.3}$Ga$_{0.7}$As

The spin lifetime and Hanle signal amplitude dependence on bias current has been investigated in insulating Al$_{0.3}$Ga$_{0.7}$As:Si using a three-terminal Hanle effect geometry. The amplitudes of the Hanle signals are much larger for forward bias than for reverse bias, although the spin lifetimes found are statistically equivalent. The spin resistance-area product shows a strong increase with bias current for reverse bias and small forward bias until 150 $μ$A, beyond which a weak dependence is observed. The spin lifetimes diminish substantially with increasing bias current. The dependence of the spin accumulation and lifetime diminish only moderately with temperature from 5 K to 30 K.

preprint2014arXiv

Spin transport and accumulation in the persistent photoconductor Al$_{0.3}$Ga$_{0.7}$As

Electrical spin transport and accumulation have been measured in highly Si doped Al0.3Ga0.7As utilizing a lateral spin transport device. Persistent photoconductivity allows for the tuning of the effective carrier density of the channel material in situ via photodoping. Hanle effect measurements are completed at various carrier densities and the measurements yield spin lifetimes on the order of nanoseconds, an order of magnitude smaller than in bulk GaAs. These measurements illustrate that this methodology can be used to obtain a detailed description of how spin lifetimes depend on carrier density in semiconductors across the metal-insulator transition.

preprint2010arXiv

Band-tail shape and transport near the metal-insulator transition in Si-doped Al(0.3)Ga(0.7)As

In the present work, an infrared LED is used to photodope MBE-grown Si:Al(0.3)Ga(0.7)As, a well known persistent photoconductor, to vary the effective electron concentration of samples in situ. Using this technique, we examine the transport properties of two samples containing different nominal doping concentrations of Si (1x10^19 cm^-3 for sample 1 (S1) and 9x10^17 cm^-3 for sample 2 (S2)) and vary the effective electron density between 10^14 and 10^18 cm^-3. The metal-insulator transition (MIT) for S1 is found to occur at a critical carrier concentration of 5.7x10^16 cm^-3 at 350 mK. The mobilities in both samples are found to be limited by ionized impurity scattering in the temperature range probed, and are adequately described by the Brooks-Herring screening theory for higher carrier densities. The shape of the band-tail of the density of states (DOS) in Al(0.3)Ga(0.7)As is found electrically through transport measurements. It is determined to be exponential in character, with an exponent of -1.25 for S1 and -1.38 for S2.

preprint2009arXiv

Dynamic micro-Hall detection of superparamagnetic beads in a microfluidic channel

We report integration of an InAs quantum well micro-Hall sensor with microfluidics and real-time detection of moving superparamagnetic beads for biological applications. The detected positive and negative signals correspond to beads moving within and around the Hall cross area respectively. Relative magnitudes and polarities of the signals measured for a random distribution of immobilized beads over the sensor are in good agreement with calculated values and explain consistently the dynamic signal shape. The fast sensor response and its high sensitivity to off-cross area beads demonstrate its capability for dynamic detection of biomolecules and long-range monitoring of non-specific binding events.