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Source author record

Peng-Jie Guo

Peng-Jie Guo appears in the imported research catalog. Authorship, coauthor and topic links are available while profile ownership is still unclaimed.

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cond-mat.mtrl-scicond-mat.mes-hallcond-mat.str-el

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Published work

6 published item(s)

preprint2022arXiv

Two-dimensional quadratic double Weyl semimetal

Unconventional Weyl semimetals have attracted intensive research interest in condensed matter physics and materials science, but they are very rare in two dimensions. In this work, based on symmetry analysis and the first-principles electronic structure calculations, we predict that the Si/Bi van der Waals heterostructure is a two-dimensional unconventional quadratic double Weyl semimetal with strong spin-orbit coupling (SOC). Although unprotected by the C3v double group symmetry of the heterostructure, the two-dimensional quadratic double Weyl semimetal is stable for compressive strains up to 6.64%. The system transforms into a trivial semimetal with further increasing strain, where the phase boundary is a two-dimensional triple degenerate semimetal state. Furthermore, the Kane-Mele tight-binding model calculations show that the quadratic double Weyl phase is derived from the competition between the Rashba SOC and the proximity-effect-enhanced intrinsic SOC. On the other hand, by breaking mirror symmetry, the quadratic double Weyl semimetal transforms into a quantum spin Hall insulator as well as a quantum valley Hall insulator phase. Thus, the Si/Bi heterostructure is an excellent platform for studying the exotic physics of two-dimensional double Weyl semimetal and other novel topological phases.

0 citations0 reviewsNo code linkedOpen access
preprint2021arXiv

Coexistence of topological Weyl and nodal-ring states in ferromagnetic and ferrimagnetic double perovskites

Magnetic topological quantum materials have attracted great attention due to their exotic topological quantum physics induced by the interplay among crystalology, magnetism, and topology, which is of profound importance to fundamental research and technology applications. However, limited materials are experimentally available, most of whom are realized by magnetic impurity doping or heterostructural constructions. In this work, based on the first-principles calculations, we predict that double perovskite Ba2CdReO6 is an intrinsic ferromagnetic topological semi-half-metal, while the ferrimagnetic double perovskite with space group symmetry Fm-3m, such as Ba2FeMoO6, belongs to a topological half-metal. One pair of Weyl points and fully spin-polarized nodal-ring states are found in the vicinity of the Fermi level in Ba2CdReO6. Its two-dimensional nearly flat drumhead surface states are fully spin-polarized. In Ba2FeMoO6, however, there exist four pairs of Weyl points and two fully spin-polarized nodal-rings near the Fermi level. These topological properties are stable in the presence of spin-orbit coupling. This makes these materials be an appropriate platform for studying the emerging intriguing properties, especially for the applications in spintronics, information technology, and topological superconductivity.

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preprint2019arXiv

Interlayer quantum transport in Dirac semimetal BaGa$_2$

Quantum limit is quite easy to achieve once the band crossing exists exactly at the Fermi level ($E_F$) in topological semimetals. In multilayered Dirac fermion system, the density of Dirac fermions on the zeroth Landau levels (LLs) increases in proportion to the magnetic field, resulting in intriguing angle- and field-dependent interlayer tunneling conductivity near the quantum limit. BaGa$_2$ is an example of multilayered Dirac semimetal with anisotropic Dirac cone close to $E_F$, providing a good platform to study its interlayer transport properties. In this paper, we report the negative interlayer magnetoresistance (NIMR, I//c and B//c) induced by the tunneling of Dirac fermions on the zeroth LLs of neighbouring Ga layers in BaGa$_2$. When the field deviates from the c-axis, the interlayer resistivity $ρ_{zz}(θ)$ increases and finally results in a peak with the field perpendicular to the c-axis. These unusual interlayer transport properties (NIMR and resistivity peak with B$\perp$c) are observed together for the first time in Dirac semimetal under ambient pressure and are well explained by the model of tunneling between Dirac fermions in the quantum limit.

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preprint2019arXiv

Quantum spin Hall effect in monolayer and bilayer TaIrTe$_{4}$

Generally, stacking two quantum spin Hall insulators gives rise to a trivial insulator. Here, based on first-principles electronic structure calculations, we confirm that monolayer TaIrTe$_{4}$ is a quantum spin Hall insulator and remarkably find that bilayer TaIrTe$_{4}$ is still a quantum spin Hall insulator. Theoretical analysis indicates that the covalent-like interlayer interaction in combination with the small bandgap at time-reversal invariant $Γ$ point results in new band inversion in bilayer TaIrTe$_{4}$, namely, the emergence of quantum spin Hall phase. Meanwhile, a topological phase transition can be observed by increasing the interlayer distance in bilayer TaIrTe$_{4}$. Considering that bulk TaIrTe$_{4}$ is a type-II Weyl semimetal, layered TaIrTe$_{4}$ thus provides an ideal platform to realize different topological phases at different dimensions.

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preprint2016arXiv

Large magnetoresistance in LaBi: origin of field-induced resistivity upturn and plateau in compensated semimetals

The discovery of non-magnetic extreme magnetoresistance (XMR) materials has induced great interests because the XMR phenomenon challenges our understanding of how a magnetic field can alter electron transport in semimetals. Among XMR materials, the LaSb shows XMR and field-induced exotic behaviors but it seems to lack the essentials for these properties. Here, we study the magnetotransport properties and electronic structure of LaBi, isostructural to LaSb. LaBi exhibits large MR as in LaSb, which can be ascribed to the nearly compensated electron and hole with rather high mobilities. More importantly, our analysis suggests that the XMR as well as field-induced resistivity upturn and plateau observed in LaSb and LaBi can be well explained by the two-band model with the compensation situation. We present the critical conditions leading to these field-induced properties. It will contribute to understanding the XMR phenomenon and explore novel XMR materials.

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preprint2016arXiv

Perfect charge compensation in extremely large magnetoresistance materials LaSb and LaBi revealed by the first-principles calculations

By the first-principles electronic structure calculations, we have systematically studied the electronic structures of recently discovered extremely large magnetoresistance (XMR) materials LaSb and LaBi. We find that both LaSb and LaBi are semimetals with the electron and hole carriers in perfect balance. The calculated carrier densities in the order of $10^{20}$ cm$^{-3}$ are in good agreement with the experimental values, implying long mean free time of carriers and thus high carrier mobilities. With a semiclassical two-band model, the perfect charge compensation and high carrier mobilities naturally explain (i) the XMR observed in LaSb and LaBi; (ii) the non-saturating quadratic dependence of XMR on external magnetic field; and (iii) the resistivity plateau in the turn-on temperature behavior at very low temperatures. The explanation of these features without resorting to the topological effect indicates that they should be the common characteristics of all perfectly electron-hole compensated semimetals.

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